P-1: Dependence of Poly-Si TFT Characteristics on Oxide Interface Traps and Grain Boundary Traps and its Application to Diagnosis of Fabrication Processes

2004 ◽  
Vol 35 (1) ◽  
pp. 220 ◽  
Author(s):  
Mutsumi Kimura ◽  
Daisuke Abe ◽  
Satoshi Inoue ◽  
Tatsuya Shimoda
Keyword(s):  
Grain Boundary ◽  
Interface Traps ◽  
Oxide Interface

2D MoS 2 Charge Injection Memory Transistors Utilizing Hetero‐Stack SiO 2 /HfO 2 Dielectrics and Oxide Interface Traps

2021 ◽  
pp. 2100074
Author(s):  
Livia Janice Widiapradja ◽  
Taewook Nam ◽  
Yeonsu Jeong ◽  
Hye‐Jin Jin ◽  
Yangjin Lee ◽  
...  
Keyword(s):  
Charge Injection ◽  
Interface Traps ◽  
Oxide Interface

A Method to Characterize n[sup +]-Polysilicon/Oxide Interface Traps in Ultrathin Oxides

2001 ◽  
Vol 4 (6) ◽  
pp. G47 ◽  
Author(s):  
Kow Ming Chang ◽  
Yuan Hung Chung ◽  
Tzyk Cheang Lee ◽  
Yong Long Sun
Keyword(s):  
Interface Traps ◽  
Oxide Interface ◽  
Ultrathin Oxides

Effects of oxide interface traps and transient enhanced diffusion on the process modeling of PMOS devices

1996 ◽  
Vol 43 (7) ◽  
pp. 1144-1152 ◽  
Author(s):  
H.-H. Vuong ◽  
C.S. Rafferty ◽  
S.A. Eshraghi ◽  
J.L. Lentz ◽  
P.M. Zeitzoff ◽  
...  
Keyword(s):  
Process Modeling ◽  
Interface Traps ◽  
Oxide Interface ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Effects of single grain boundary and random interface traps on electrical variations of sub-30 nm polysilicon nanowire structures

2016 ◽  
Vol 149 ◽  
pp. 113-116 ◽  
Author(s):  
Hyeongwan Oh ◽  
Jungsik Kim ◽  
Junyoung Lee ◽  
Taiuk Rim ◽  
Chang-Ki Baek ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Interface Traps ◽  
Random Interface ◽  
Single Grain

scholarly journals Effects of the Amorphous Oxide Intergranular Layer Structure and Bonding on the Fracture Toughness of a High Purity Silicon Nitride

2002 ◽  
Vol 751 ◽  
Author(s):  
A. Ziegler ◽  
C. Kisielowski ◽  
M. J. Hoffmann ◽  
R. O. Ritchie
Keyword(s):  
Fracture Toughness ◽  
Silicon Nitride ◽  
Grain Boundary ◽  
Layer Structure ◽  
Structural Characteristics ◽  
Structural Phase ◽  
Building Blocks ◽  
Triple Junctions ◽  
Oxide Interface ◽  
Macroscopic Fracture

ABSTRACTThe microstructural evolution and structural characteristics and transitions in the thin grain-boundary oxide films in a silicon nitride ceramic, specifically between two adjacent grains and not the triple junctions, are investigated to find their effect on the macroscopic fracture properties. It is found that by heat treating a model Si3N4-2wt% Y2O3 ceramic for ∼200 hr at 1400°C in air, the fracture toughness can be increased by ∼100%, coincident with a change in fracture mechanism from transgranular to intergranular. Structural phase transformations occur in the thin grain boundaries during oxidation that are revealed by XRD, EDX, Raman and EELS analyses. They affect the local bonding of atoms. It is concluded that only specific crystal “building blocks”, i.e., tetrahedra, are transformed along the grain boundary and the resulting difference in the atomic structure of the oxide interface is seen directly to alter the macroscopic fracture behavior.

The Effect of Y and Zr on the Oxidation of NiA1

1994 ◽  
Vol 364 ◽  
Author(s):  
Eckart Schumann ◽  
J. C. Yang ◽  
M. Rühle ◽  
M. J. Graham
Keyword(s):  
High Resolution ◽  
Grain Boundary ◽  
Metal Oxide ◽  
Grain Boundaries ◽  
Oxidation Behaviour ◽  
Oxide Interface ◽  
Analytical Tem ◽  
Outward Transport ◽  
Tracer Experiments

AbstractThe effect of Y and Zr on the oxidation behaviour of NiAl has been investigated using high resolution SIMS and analytical TEM. 18O tracer experiments in conjunction with SIMS showed that Y and Zr reduce the outward transport of cations during the growth of the AI2O3 scale. Complementary STEM-EDS measurements revealed segregation of Y and Zr at the metal/oxide interface as well as the grain boundaries in the AI2O3 scale. The amounts of segregation at both the interface and grain boundary were calculated to be less than one monolayer.

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