9.2: High-Luminance Electroluminescence from {(Y[sub 2]O[sub 3])[sub 1−x]-(GeO[sub 2])[sub x]} Phosphor Thin Film

2002 ◽  
Vol 33 (1) ◽  
pp. 100 ◽  
Author(s):  
Tadatsugu Minami ◽  
Youhei Kobayashi ◽  
Toshihiro Miyata ◽  
Shingo Suzuki
Keyword(s):  
Thin Film ◽  
High Luminance

Laser-Deposition Of High Luminance Thin Film Phosphors

1994 ◽  
Vol 345 ◽  
Author(s):  
J. A. Greer ◽  
H. J. Van Hook ◽  
M. D. Tabat ◽  
H. Q. Nguyen ◽  
G. Gammie ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Fields ◽  
Spot Size ◽  
Porous Powder ◽  
Powder Phosphor ◽  
High Luminance ◽  
Intimate Contact ◽  
Field Emitter ◽  
Display Performance ◽  
Phosphor Screens

AbstractHigh luminance (brightness) thin-film phosphor materials have potential use in a variety of applications including heads-up, helmet-mounted, and electroluminescent displays, as well as in emerging flat-panel displays based on field emitter technology. Phosphor materials in thin film form offer several advantages over conventional powder phosphor screens. Since the film is nearly fully dense and in intimate contact with the underlying substrate, thin film phosphors transfer heat to the face plate much quicker than conventional, more porous, powder phosphor materials. This allows thin film phosphor screens to be driven at higher power levels, and therefore produce higher luminance, assuming the efficiency of the powder and film are the same. Fully dense phosphor films have smaller surface area, and will outgas less than conventional powder phosphor materials. Thin film phosphors have smaller grain sizes than conventional powder phosphor materials which will provide for smaller spot size, and thus, higher resolution. Furthermore, in applications such as field-emitter displays, powder phosphor particles can be physically dislodged from the screen due to the high electric fields produced by the large potential difference between the anode screen and gate electrode (or cathode), or dislodged by arcing which may occur if a powder particle protrudes significantly above the screen surface. Dislodged particles or damage produced by arcing could degrade display performance. Dense, thin-film phosphor materials which are well adhered to transparent substrates will provide much smoother surface morphologies, and should be able to withstand significantly higher electric field strength without arcing or screen degradation due to the dislocation of particles.

High-Luminance Thin Film Electroluminescent Devices Using Monoclinic Y2O3 Phosphor Activated with Mn

2002 ◽  
Vol 41 (Part 2, No. 4B) ◽  
pp. L478-L480 ◽  
Author(s):  
Tadatsugu Minami ◽  
Youhei Kobayashi ◽  
Tetsuya Shirai ◽  
Toshihiro Miyata ◽  
Shingo Suzuki
Keyword(s):  
Thin Film ◽  
High Luminance ◽  
Electroluminescent Devices

New high-luminance thin-film electroluminescent devices using ZnGa2O4 phosphor emitting layers

1996 ◽  
Vol 4 (2) ◽  
pp. 53 ◽  
Author(s):  
Tadatsugu Minami ◽  
Shinzo Takata ◽  
Yoshihiro Kuroi ◽  
Takanori Maeno
Keyword(s):  
Thin Film ◽  
High Luminance ◽  
Electroluminescent Devices

High-Luminance Green Zn2SiO4:Mn Thin-Film Electroluminescent Devices Using an Insulating BaTiO3Ceramic Sheet

1991 ◽  
Vol 30 (Part 2, No. 1B) ◽  
pp. L117-L119 ◽  
Author(s):  
Tadatsugu Minami ◽  
Toshihiro Miyata ◽  
Shinzo Takata ◽  
Ichiro Fukuda
Keyword(s):  
Thin Film ◽  
High Luminance ◽  
Electroluminescent Devices

High-Luminance Thin-Film Electroluminescent Devices Using ((Y2O3)0.6-(GeO2)0.4):Mn Phosphors

2002 ◽  
Vol 41 (Part 2, No. 5B) ◽  
pp. L577-L579 ◽  
Author(s):  
Tadatsugu Minami ◽  
Youhei Kobayashi ◽  
Toshihiro Miyata ◽  
Shingo Suzuki
Keyword(s):  
Thin Film ◽  
High Luminance ◽  
Electroluminescent Devices

Red Emitting Electroluminescent Devices Using Ga2O3 Phosphor Thin Films Prepared by Sol-Gel Process

2001 ◽  
Vol 667 ◽  
Author(s):  
Tadatsugu Minami ◽  
Tetsuya Shirai ◽  
Toshihiro Miyata
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Deposition Method ◽  
Sinusoidal Wave ◽  
High Luminance ◽  
Insulating Layer ◽  
Electroluminescent Devices ◽  
Sol Gel Process ◽  
Dopant Source

ABSTRACTHigh-luminance red-emitting thin-film electroluminescent (TFEL) devices have been developed using Ga2O3 phosphor thin films prepared by a sol-gel deposition method. Single-insulating-layer-type TFEL devices were fabricated by depositing a Cr- or a Eu-activated Ga2O3 phosphor thin film onto a thick BaTiO3 ceramic sheet insulator. The Ga2O3:Cr or Ga2O3:Eu thin-film emitting layer was prepared by a sol-gel process using gallium acethylacetonate (Ga(C5H7O2)3) as the Ga source with Cr(C5H7O2)3 or EuC13 as the dopant source, respectively. A high red luminance of 622 cd/m2 was obtained for a Ga2O3:Cr TFEL device driven by a sinusoidal wave voltage at 1 kHz.

Thin-film micromirror array (TMA) for high luminance and cost-competitive information display systems

1999 ◽  
Author(s):  
Sang-Gook Kim ◽  
Kyu-Ho Hwang ◽  
Jong-Sam Kim ◽  
Young-Jun Choi ◽  
Joon-Mo Kim
Keyword(s):  
Thin Film ◽  
High Luminance ◽  
Information Display ◽  
Display Systems ◽  
Micromirror Array
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