Laser-Deposition Of High Luminance Thin Film Phosphors

1994 ◽  
Vol 345 ◽  
Author(s):  
J. A. Greer ◽  
H. J. Van Hook ◽  
M. D. Tabat ◽  
H. Q. Nguyen ◽  
G. Gammie ◽  
...  

AbstractHigh luminance (brightness) thin-film phosphor materials have potential use in a variety of applications including heads-up, helmet-mounted, and electroluminescent displays, as well as in emerging flat-panel displays based on field emitter technology. Phosphor materials in thin film form offer several advantages over conventional powder phosphor screens. Since the film is nearly fully dense and in intimate contact with the underlying substrate, thin film phosphors transfer heat to the face plate much quicker than conventional, more porous, powder phosphor materials. This allows thin film phosphor screens to be driven at higher power levels, and therefore produce higher luminance, assuming the efficiency of the powder and film are the same. Fully dense phosphor films have smaller surface area, and will outgas less than conventional powder phosphor materials. Thin film phosphors have smaller grain sizes than conventional powder phosphor materials which will provide for smaller spot size, and thus, higher resolution. Furthermore, in applications such as field-emitter displays, powder phosphor particles can be physically dislodged from the screen due to the high electric fields produced by the large potential difference between the anode screen and gate electrode (or cathode), or dislodged by arcing which may occur if a powder particle protrudes significantly above the screen surface. Dislodged particles or damage produced by arcing could degrade display performance. Dense, thin-film phosphor materials which are well adhered to transparent substrates will provide much smoother surface morphologies, and should be able to withstand significantly higher electric field strength without arcing or screen degradation due to the dislocation of particles.

2022 ◽  
Vol 34 (1) ◽  
pp. 012109
Author(s):  
Z. Wang ◽  
C. Zhang ◽  
H. Xia ◽  
Q. Xie ◽  
W. Deng

Soft Matter ◽  
2006 ◽  
Vol 2 (12) ◽  
pp. 1089-1094 ◽  
Author(s):  
Violetta Olszowka ◽  
Markus Hund ◽  
Volker Kuntermann ◽  
Sabine Scherdel ◽  
Larisa Tsarkova ◽  
...  

1997 ◽  
Vol 471 ◽  
Author(s):  
J. Liu ◽  
D. C. Morton ◽  
M. R. Miller ◽  
Y. Li ◽  
E. W. Forsythe ◽  
...  

ABSTRACTZn2SiO4:Mn thin films were deposited and studied as thin film phosphors for flat panel cathodoluminescent displays. Crystallized films with improved electrical conductivity were obtained after conventional and rapid thermal annealings in a N2 environment at 850Xy11100 °C for 0.25 to 60 minutes. A maximum cathodoluminescent efficiency of 1.3 Lm/W was achieved under dc excitation at 1500 volts. The luminescent emission from these thin films was peaked around 525 nm. The decay time of these films was controlled in the range of 2 to 10 ms by varying the deposition and annealing parameters. The fast response time of these thin films overcomes the long decay limitation of the Zn2SiO4:Mn powder phosphor in practical display applications.


Cerâmica ◽  
2007 ◽  
Vol 53 (326) ◽  
pp. 187-191 ◽  
Author(s):  
L. P. Ravaro ◽  
E. A. Morais ◽  
L. V. A. Scalvi ◽  
M. Siu Li

Emission from Er-doped SnO2 thin film deposited via sol-gel by the dip coating technique is obtained in the range 500-700 nm with peak at 530 nm (green). Electron-hole generation in the tin dioxide matrix is used to promote the rare-earth ion excitation. Evaluation of crystallite dimensions through X-ray diffraction results leads to nanoscopic size, what could play a relevant role in the emission spectra. The electron-hole mechanism is also responsible for the excitation of the transition in the 1540 nm range in powders obtained from the same precursor solution of films. The thin film matrix presents a very useful shape for technological application, since it allows integration in optical devices and the application of electric fields to operate electroluminescent devices.


2002 ◽  
Vol 41 (Part 2, No. 4B) ◽  
pp. L478-L480 ◽  
Author(s):  
Tadatsugu Minami ◽  
Youhei Kobayashi ◽  
Tetsuya Shirai ◽  
Toshihiro Miyata ◽  
Shingo Suzuki

1999 ◽  
Vol 586 ◽  
Author(s):  
C. Korte ◽  
J. K. Farrer ◽  
N. Ravishankar ◽  
J. R. Michael ◽  
H. Schmalzried ◽  
...  

ABSTRACTInterfaces play an important role in determining the effect of electric fields on the mechanism of the formation of spinel by solid-state reaction. The reaction occurs by the movement of phase boundaries but the rate of this movement can be affected by grain boundaries in the reactants or in the reaction product. Only by understanding these relationships will it be possible to engineer their behavior. As a particular example of such a study, Mgln2O4 can be formed by the reaction between single-crystal MgO substrate and a thin film of In2O3with or without an applied electric field. High-resolution backscattered electron (BSE) imaging and electron backscattered diffraction (EBSD) in a scanning electron microscope (SEM) has been used to obtain complementary chemical and crystallographic information.


1996 ◽  
Vol 4 (2) ◽  
pp. 53 ◽  
Author(s):  
Tadatsugu Minami ◽  
Shinzo Takata ◽  
Yoshihiro Kuroi ◽  
Takanori Maeno

Sign in / Sign up

Export Citation Format

Share Document