scholarly journals Organic-polymer thin-film transistors for active-matrix flat-panel displays?

2003 ◽  
Vol 11 (3) ◽  
pp. 543 ◽  
Author(s):  
Sandrine Martin ◽  
Michael Hamilton ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Polymer ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Polymer Thin Film ◽  
Active Matrix

Attempts to Apply Thin Film Transistors to Electroluminescent Displays

1984 ◽  
Vol 33 ◽  
Author(s):  
M. Robert Miller
Keyword(s):  
Thin Film ◽  
Problem Solving ◽  
Thin Film Transistors ◽  
Flat Panel Displays ◽  
Huge Amount ◽  
Flat Panel ◽  
Active Matrix ◽  
Display Devices ◽  
The Subject ◽  
Problem Solving Process

ABSTRACTThe objectives of the two programs described here were to develop fabrication processes for flat panel displays using an active matrix of thin film transistors (TFT) behind an electroluminescent (EL) display medium. The programs were carried out under ERADCOM contracts DAAB07-76-C-0027 with Westinghouse R&D Center and DAAB-07-77-C-0583 with Aerojet Electrosystems Company. The huge amount of information about the processes and technology generated through the efforts of capable and dedicated people who worked on these programs was, in spite of everything, not enough to achieve the stated objectives. The fabrication processes developed did not result in repeatable, reliable display devices. The solutions applied to one set of problems tended to uncover new problems previously unseen, but this continual problem solving process probably generated more information about the technology than results from many programs in which the goals are achieved. The improved understanding of TFT processes and applicability is the subject of this report.

Effect of Illumination on Organic Polymer Thin-Film Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Charge Carriers ◽  
Electrical Performance ◽  
Organic Polymer ◽  
Light Illumination ◽  
Polymer Thin Film ◽  
Channel Region ◽  
White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

Low temperature (≦600°C) unhydrogenated in-situ doped polysilicon thin film transistors: Towards a technology for flat panel displays

1997 ◽  
Vol 296 (1-2) ◽  
pp. 133-136 ◽  
Author(s):  
L. Pichon ◽  
F. Raoult ◽  
K. Mourgues ◽  
K. Kis-Sion ◽  
T. Mohammed-Brahim ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Flat Panel Displays ◽  
Flat Panel

Application of Self-Aligned Amorphous SI Thin-Film Transistors

1999 ◽  
Vol 557 ◽  
Author(s):  
J.P. Lu ◽  
P. Mei ◽  
C. Chua ◽  
J. Ho ◽  
Y. Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
New Technology ◽  
Channel Length ◽  
Shift Register ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Amorphous Si ◽  
Si Thin Film ◽  
Dynamic Shift

AbstractWe have successfully used self-aligned Amorphous Si Thin-Film Transistors, fabricated by a laser doping/annealing process, to construct dynamic shift register circuits, which can be used as gate-line drivers or in other peripheral circuits for flat-panel displays and imagers. Taking advantage of easily scaling down the TFT channel length in a self-aligned process, much higher circuit speeds can be achieved compared to that of circuits using conventional TFTs. We have successfully demonstrated a four-phase dynamic shift register, operating at a clock speed higher that 250 kHz (1 μs for each clock phase) built on 3 μm channel length TFTs. This new technology opens up possibilities for integrating peripheral circuits in flat-panel displays and imagers based on a-Si TFTs.

Gate-planarized organic polymer thin film transistors

2002 ◽  
Vol 31 (5) ◽  
pp. 512-519 ◽  
Author(s):  
Sandrine Martin ◽  
Jeong-Yeop Nahm ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Polymer ◽  
Polymer Thin Film

High Performance Thin Film Transistors for Scanner Applications

1990 ◽  
Vol 182 ◽  
Author(s):  
B.-C. Hseih ◽  
G.A. Hawkins ◽  
S. Ashok
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Amorphous Silicon Film

AbstractWe report on the characteristics of polycrystalline silicon (polysilicon) thin film transistors (TFTs) fabricated with low temperature crystallized LPCVD amorphous silicon film as an active layer and plasma enhanced chemical vapor deposition (PECVD) SiO2 as a gate insulator. High performance transistor characteristics are achieved, even though no process temperature exceeds 600°C. No threshold drift has been observed. As a result, these devices are highly suitable for application to image scanners as well as flat panel displays.

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