scholarly journals Top-down Fabrication of Silicon Nanowires Using Thermal Oxidation and Wet Etching for Inertial Sensor Applications

2018 ◽  
Vol 30 (8) ◽  
pp. 1891 ◽  
Author(s):  
Seohyeong Jang ◽  
Hun Lee ◽  
Joon Yoon Shin ◽  
Hyung Jung Yoo ◽  
Dong-il "Dan" Cho
Keyword(s):  
Thermal Oxidation ◽  
Silicon Nanowires ◽  
Inertial Sensor ◽  
Wet Etching ◽  
Top Down ◽  
Sensor Applications

29pm2-F-3 Piezoresistive effect of p-type silicon nanowires fabricated by a top-down process using FIB implantation and wet etching

2015 ◽  
Vol 2015.7 (0) ◽  
pp. _29pm2-F-3-_29pm2-F-3
Author(s):  
Takahiro Kozeki ◽  
Hoang-Phuong Phan ◽  
Dzung Viet Dao ◽  
Shozo Inoue ◽  
Takahiro Namazu
Keyword(s):  
Silicon Nanowires ◽  
Wet Etching ◽  
Top Down ◽  
Piezoresistive Effect ◽  
Type Silicon ◽  
P Type

scholarly journals Piezoresistive effect of p-type silicon nanowires fabricated by a top-down process using FIB implantation and wet etching

RSC Advances ◽  
2015 ◽  
Vol 5 (100) ◽  
pp. 82121-82126 ◽  
Author(s):  
Hoang-Phuong Phan ◽  
Takahiro Kozeki ◽  
Toan Dinh ◽  
Tatsuya Fujii ◽  
Afzaal Qamar ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Wet Etching ◽  
Top Down ◽  
Piezoresistive Effect ◽  
Type Silicon ◽  
Mechanical Sensors ◽  
P Type

This work reports the piezoresistance of silicon nanowires fabricated using focused ion beam and wet etching for NEMS mechanical sensors.

25 nm Single-Crystal Silicon Nanowires Fabricated by Anisotropic Wet Etching

2017 ◽  
Vol 17 (2) ◽  
pp. 1525-1529
Author(s):  
Hoang Manh Chu ◽  
Minh Van Nguyen ◽  
Hung Ngoc Vu ◽  
Kazuhiro Hane
Keyword(s):  
Single Crystal ◽  
Silicon Nanowires ◽  
Single Crystal Silicon ◽  
Wet Etching ◽  
Crystal Silicon

Top down nano technologies in surface modification of materials

Open Physics ◽  
2011 ◽  
Vol 9 (2) ◽  
Author(s):  
Branislav Radjenović ◽  
Marija Radmilović-Radjenović
Keyword(s):  
Surface Modification ◽  
Three Dimensional ◽  
Wet Etching ◽  
Plasma Reactors ◽  
Top Down ◽  
Isotropic Etching ◽  
Microelectronic Devices ◽  
Etching Profile ◽  
Simulation Results ◽  
Low K

AbstractThis article contains a broad overview of etch process as one of the most important top-down technologies widely used in semiconductor manufacturing and surface modification of nanostructures. In plasma etching process, the complexity comes from the introduction of new materials and from the constant reduction in dimensions of the structures in microelectronics. The emphasis was made on two types of etching processes: dry etching and wet etching illustrated by three dimensional (3D) simulation results for the etching profile evolution based on the level set method. The etching of low-k dielectrics has been demonstrated via modelling the porous materials. Finally, simulation results for the roughness formation during isotropic etching of nanocomposite materials as well as smoothing of the homogeneous materials have also been shown and analyzed. Simulation results, presented here, indicate that with shrinking microelectronic devices, plasma and wet etching interpretative and predictive modeling and simulation have become increasingly more attractive as a tool for design, control and optimization of plasma reactors.

scholarly journals Synchrotron studies of top-down grown silicon nanowires

2018 ◽  
Vol 9 ◽  
pp. 1494-1496 ◽  
Author(s):  
S.Yu. Turishchev ◽  
E.V. Parinova ◽  
D.N. Nesterov ◽  
D.A. Koyuda ◽  
V. Sivakov ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Top Down ◽  
Synchrotron Studies

Study on the Thermal Oxidation of Photonic Crystals for Sensor Applications

2019 ◽  
Vol 39 (1) ◽  
pp. 321-328 ◽  
Author(s):  
Danilo R. Huanca ◽  
Vinícius F. Elias ◽  
Walter J. Salcedo
Keyword(s):  
Photonic Crystals ◽  
Thermal Oxidation ◽  
Sensor Applications

Electrofluidic Assembly of Nanoelectromechanical Systems

2001 ◽  
Vol 687 ◽  
Author(s):  
Stephane Evoy ◽  
Ben Hailer ◽  
Martin Duemling ◽  
Benjamin R. Martin ◽  
Thomas E. Mallouk ◽  
...  
Keyword(s):  
Nanoelectromechanical Systems ◽  
Quality Factors ◽  
Top Down ◽  
High Quality ◽  
Resonant Frequencies ◽  
Surface Machining ◽  
Sensor Applications ◽  
Surface Assembly ◽  
Manufacturing Technologies ◽  
20 Nm

AbstractRecent advances in surface nanomachining have allowed the fabrication of mechanical structures with dimensions reaching 20 nm, and resonant frequencies in the 100s of MHz. Structural issues prevent the “top-down” surface machining of high-quality NEMS resonators. Such systems are alternatively to be bestowed by “bottom-up” manufacturing technologies. We report the surface assembly of RF-range NEMS. Using electrofluidic assembly, we have successfully positioned Rh mechanical beams onto specific sites of a silicon circuit. With diameters as small as 250 nm and lengths varying from 2 to 3 [.proportional]m, preliminary results show mechanical resonances ranging from 5 MHz to 80 MHz, and quality factors reaching 500. We also report the development of nanostructured NEMS for sensor applications, and present strategies for their deployment in integrative nanosystems.

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