scholarly journals Piezoresistive effect of p-type silicon nanowires fabricated by a top-down process using FIB implantation and wet etching

RSC Advances ◽  
2015 ◽  
Vol 5 (100) ◽  
pp. 82121-82126 ◽  
Author(s):  
Hoang-Phuong Phan ◽  
Takahiro Kozeki ◽  
Toan Dinh ◽  
Tatsuya Fujii ◽  
Afzaal Qamar ◽  
...  

This work reports the piezoresistance of silicon nanowires fabricated using focused ion beam and wet etching for NEMS mechanical sensors.

2015 ◽  
Vol 2015.7 (0) ◽  
pp. _29pm2-F-3-_29pm2-F-3
Author(s):  
Takahiro Kozeki ◽  
Hoang-Phuong Phan ◽  
Dzung Viet Dao ◽  
Shozo Inoue ◽  
Takahiro Namazu

Author(s):  
Marcos V. Puydinger dos Santos ◽  
Lucas P. B. Lima ◽  
Jose A. Diniz ◽  
Jose Godoy Filho

2001 ◽  
Vol 705 ◽  
Author(s):  
Adrian Spiegel ◽  
M. Döbeli ◽  
Patrik Schmuki

AbstractSub-micrometer copper nanostructures were deposited on p-type silicon (p-Si) by means of a selective electrochemical reaction. Ga+-ions from a focused ion beam (FIB) were used to 'write' damage patterns on p-Si; in a subsequent electrochemical reaction Cu was deposited selectively at these defect sites. So far we have been able to obtain Cu structures with a lateral resolution of 300nm, which is also the limit of the FIB currently used.The process may offer advantages over traditional lithographic methods for producing nanometer sized metal structure on Si as no masking steps are required. Also, structures with a lateral resolution in the sub- 100nm region seem possible; so far the process has only been limited by the FIB's lateral resolution.


Author(s):  
Alain Bosseboeuf ◽  
Pierre Etienne Allain ◽  
Fabien Parrain ◽  
Xavier Le Roux ◽  
Nathalie Isac ◽  
...  

Author(s):  
Po Fu Chou ◽  
Li Ming Lu

Abstract Dopant profile inspection is one of the focused ion beam (FIB) physical analysis applications. This paper presents a technique for characterizing P-V dopant regions in silicon by using a FIB methodology. This technique builds on published work for backside FIB navigation, in which n-well contrast is observed. The paper demonstrates that the technique can distinguish both n- and p-type dopant regions. The capability for imaging real sample dopant regions on current fabricated devices is also demonstrated. SEM DC and FIB DC are complementary methodologies for the inspection of dopants. The advantage of the SEM DC method is high resolution and the advantage of FIB DC methodology is high contrast, especially evident in a deep N-well region.


Author(s):  
Dirk Doyle ◽  
Lawrence Benedict ◽  
Fritz Christian Awitan

Abstract Novel techniques to expose substrate-level defects are presented in this paper. New techniques such as inter-layer dielectric (ILD) thinning, high keV imaging, and XeF2 poly etch overflow are introduced. We describe these techniques as applied to two different defects types at FEOL. In the first case, by using ILD thinning and high keV imaging, coupled with focused ion beam (FIB) cross section and scanning transmission electron microscopy (STEM,) we were able to judge where to sample for TEM from a top down perspective while simultaneously providing the top down images giving both perspectives on the same sample. In the second case we show retention of the poly Si short after removal of CoSi2 formation on poly. Removal of the CoSi2 exposes the poly Si such that we can utilize XeF2 to remove poly without damaging gate oxide to reveal pinhole defects in the gate oxide. Overall, using these techniques have led to 1) increased chances of successfully finding the defects, 2) better characterization of the defects by having a planar view perspective and 3) reduced time in localizing defects compared to performing cross section alone.


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