scholarly journals Piezoresistive effect of p-type silicon nanowires fabricated by a top-down process using FIB implantation and wet etching

RSC Advances ◽  
2015 ◽  
Vol 5 (100) ◽  
pp. 82121-82126 ◽  
Author(s):  
Hoang-Phuong Phan ◽  
Takahiro Kozeki ◽  
Toan Dinh ◽  
Tatsuya Fujii ◽  
Afzaal Qamar ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Wet Etching ◽  
Top Down ◽  
Piezoresistive Effect ◽  
Type Silicon ◽  
Mechanical Sensors ◽  
P Type

This work reports the piezoresistance of silicon nanowires fabricated using focused ion beam and wet etching for NEMS mechanical sensors.

29pm2-F-3 Piezoresistive effect of p-type silicon nanowires fabricated by a top-down process using FIB implantation and wet etching

2015 ◽  
Vol 2015.7 (0) ◽  
pp. _29pm2-F-3-_29pm2-F-3
Author(s):  
Takahiro Kozeki ◽  
Hoang-Phuong Phan ◽  
Dzung Viet Dao ◽  
Shozo Inoue ◽  
Takahiro Namazu
Keyword(s):  
Silicon Nanowires ◽  
Wet Etching ◽  
Top Down ◽  
Piezoresistive Effect ◽  
Type Silicon ◽  
P Type

Fabrication of p-type silicon nanowires for 3D FETs using focused ion beam

2013 ◽  
Vol 31 (6) ◽  
pp. 06FA01 ◽  
Author(s):  
Marcos V. Puydinger dos Santos ◽  
Lucas P. B. Lima ◽  
Jose A. Diniz ◽  
Jose Godoy Filho
Keyword(s):  
Silicon Nanowires ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Type Silicon ◽  
P Type

Nanoscale Electrochemical Deposition of Metals on FIB Sensitized p-Type Silicon

2001 ◽  
Vol 705 ◽  
Author(s):  
Adrian Spiegel ◽  
M. Döbeli ◽  
Patrik Schmuki
Keyword(s):  
Electrochemical Deposition ◽  
Focused Ion Beam ◽  
Electrochemical Reaction ◽  
Ion Beam ◽  
Metal Structure ◽  
Lateral Resolution ◽  
Type Silicon ◽  
Defect Sites ◽  
P Type

AbstractSub-micrometer copper nanostructures were deposited on p-type silicon (p-Si) by means of a selective electrochemical reaction. Ga+-ions from a focused ion beam (FIB) were used to 'write' damage patterns on p-Si; in a subsequent electrochemical reaction Cu was deposited selectively at these defect sites. So far we have been able to obtain Cu structures with a lateral resolution of 300nm, which is also the limit of the FIB currently used.The process may offer advantages over traditional lithographic methods for producing nanometer sized metal structure on Si as no masking steps are required. Also, structures with a lateral resolution in the sub- 100nm region seem possible; so far the process has only been limited by the FIB's lateral resolution.

scholarly journals Thermal and electromechanical characterization of top-down fabricated p-type silicon nanowires

2015 ◽  
Vol 6 (2) ◽  
pp. 025001 ◽  
Author(s):  
Alain Bosseboeuf ◽  
Pierre Etienne Allain ◽  
Fabien Parrain ◽  
Xavier Le Roux ◽  
Nathalie Isac ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Top Down ◽  
Type Silicon ◽  
P Type ◽  
Electromechanical Characterization

The Novel Dopant Profile Inspection Methodology by FIB

2010 ◽  
Author(s):  
Po Fu Chou ◽  
Li Ming Lu
Keyword(s):  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Real Sample ◽  
Physical Analysis ◽  
The Novel ◽  
High Contrast ◽  
Dopant Profile ◽  
P Type

Abstract Dopant profile inspection is one of the focused ion beam (FIB) physical analysis applications. This paper presents a technique for characterizing P-V dopant regions in silicon by using a FIB methodology. This technique builds on published work for backside FIB navigation, in which n-well contrast is observed. The paper demonstrates that the technique can distinguish both n- and p-type dopant regions. The capability for imaging real sample dopant regions on current fabricated devices is also demonstrated. SEM DC and FIB DC are complementary methodologies for the inspection of dopants. The advantage of the SEM DC method is high resolution and the advantage of FIB DC methodology is high contrast, especially evident in a deep N-well region.

Physical Failure Analysis Techniques for Front-End-of-Line Defect Analysis

2016 ◽  
Author(s):  
Dirk Doyle ◽  
Lawrence Benedict ◽  
Fritz Christian Awitan
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Gate Oxide ◽  
Top Down ◽  
New Techniques ◽  
First Case ◽  
Transmission Electron ◽  
Scanning Transmission

Abstract Novel techniques to expose substrate-level defects are presented in this paper. New techniques such as inter-layer dielectric (ILD) thinning, high keV imaging, and XeF2 poly etch overflow are introduced. We describe these techniques as applied to two different defects types at FEOL. In the first case, by using ILD thinning and high keV imaging, coupled with focused ion beam (FIB) cross section and scanning transmission electron microscopy (STEM,) we were able to judge where to sample for TEM from a top down perspective while simultaneously providing the top down images giving both perspectives on the same sample. In the second case we show retention of the poly Si short after removal of CoSi2 formation on poly. Removal of the CoSi2 exposes the poly Si such that we can utilize XeF2 to remove poly without damaging gate oxide to reveal pinhole defects in the gate oxide. Overall, using these techniques have led to 1) increased chances of successfully finding the defects, 2) better characterization of the defects by having a planar view perspective and 3) reduced time in localizing defects compared to performing cross section alone.

Sign in / Sign up

Export Citation Format

Share Document