scholarly journals Photoelectric Properties in Amorphous Chalcogenide Glassy Semiconductor As40Se30S30 Films

2010 ◽  
Vol 12 (3,4) ◽  
pp. 285
Author(s):  
O. Prikhodko ◽  
N. Almasov ◽  
N. Korobova ◽  
S. Duysembaev ◽  
K. Turmanova ◽  
...  
Keyword(s):  
Thermal Evaporation ◽  
Rf Sputtering ◽  
Charge Carriers ◽  
Ion Sputtering ◽  
Amorphous Chalcogenide ◽  
Photoelectric Properties ◽  
Deep Traps ◽  
Ion Plasma ◽  
Glassy Semiconductor ◽  
Chalcogenide Glassy Semiconductor

<p>Bipolar photoconductivity and bipolar drift of charge carriers have been established in amorphous chalcogenide glassy semiconductors As<sub>40</sub>Se<sub>30</sub>S<sub>30</sub> films, obtained by ion-plasma rf sputtering, in contrast to the films of these materials obtained by thermal evaporation. Observed results were due to the lack of deep traps for electrons in the spectrum of localized film states obtained by ion sputtering.</p>

scholarly journals Photo-Structural Transformations in Amorphous Chalcogenide Glassy Semiconductor Films

2010 ◽  
Vol 12 (3,4) ◽  
pp. 279
Author(s):  
O. Prikhodko ◽  
N. Almasov ◽  
N. Korobova ◽  
S. Duysembaev ◽  
K. Turmanova ◽  
...  
Keyword(s):  
High Frequency ◽  
Thermal Evaporation ◽  
Charge Carriers ◽  
Localized States ◽  
Semiconductor Films ◽  
Plasma Sputtering ◽  
Deep Traps ◽  
Ion Plasma ◽  
Glassy Semiconductor ◽  
Chalcogenide Glassy Semiconductor

<p>The absence of deep traps for electrons in the spectrum of As<sub>40</sub>Se<sub>30</sub>S<sub>30</sub> localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As<sub>40</sub>Se<sub>30</sub>S<sub>30</sub> films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.</p>

CHARACTERIZATIONS OF THE CORE-SHELL STRUCTURED MgB2/CARBON FIBER SYNTHESIS BY RF-SPUTTERING AND THERMAL EVAPORATION

2010 ◽  
Vol 17 (02) ◽  
pp. 177-184 ◽  
Author(s):  
SUNG CHANG PARK ◽  
YEONG JIN LIM ◽  
TAE-KEUN LEE ◽  
CHEOL JIN KIM
Keyword(s):  
Carbon Fiber ◽  
Vapor Pressure ◽  
Deposition Rate ◽  
Thermal Evaporation ◽  
Rf Sputtering ◽  
Control Unit ◽  
Average Diameter ◽  
Second Phase ◽  
Deposition Condition ◽  
Superconducting Transition

MgB2 /carbon fibers have been synthesized by the combination of RF-sputtering of B and thermal evaporation of Mg , followed by co-evaporation. First, boron layer was deposited by RF-sputtering on the carbon fiber with average diameter of 7.1 μm. Later this coated layer of B was reacted with Mg vapor to transform into MgB2 . Since the MgB2 reaction proceed with Mg diffusion into the boron layer, Mg vapor pressure and the diffusion time had to be controlled precisely to secure the complete reaction. Also the deposition rate of each element was controlled separately to obtain stoichiometric MgB2 , since Mg was evaporated by thermal heating and B by sputtering system. The sintered B target was magnetron sputtered at the RF-power of ~200 W, which corresponded to the deposition rate of ~3.6 Å/s. With the deposition rate of B fixed, the vapor pressure of Mg was controlled by varying the temperature of tungsten boat with heating element control unit between 100 and 900°C. The MgB2 layers with the thickness of 200–950 nm could be obtained and occasionally MgO appeared as a second phase. Superconducting transition temperatures were measured around ~38 K depending on the deposition condition.

scholarly journals Thermal Evaporation of Amorphous Chalcogenide on Single-mode Optical Fiber

2010 ◽  
Vol 47 (2) ◽  
pp. 142-145
Author(s):  
Sung-Tae Hwang ◽  
Kyu-Man Cho ◽  
Bong-Hoon Kang ◽  
Gi-Tae Joo
Keyword(s):  
Optical Fiber ◽  
Thermal Evaporation ◽  
Single Mode ◽  
Single Mode Optical Fiber ◽  
Amorphous Chalcogenide

Structure of Se95As5 Chalcogenide Glassy Semiconductor Doped by EuF3 Impurity

2019 ◽  
Vol 53 (11) ◽  
pp. 1507-1510
Author(s):  
S. N. Garibova ◽  
A. I. Isayev ◽  
S. I. Mekhtiyeva ◽  
S. U. Atayeva
Keyword(s):  
Glassy Semiconductor ◽  
Chalcogenide Glassy Semiconductor

scholarly journals Interface Structure and Band Alignment of CZTS/CdS Heterojunction: An Experimental and First-Principles DFT Investigation

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4040 ◽  
Author(s):  
Sachin Rondiya ◽  
Yogesh Jadhav ◽  
Mamta Nasane ◽  
Sandesh Jadkar ◽  
Nelson Y. Dzade
Keyword(s):  
Dft Calculations ◽  
First Principles ◽  
Density Functional ◽  
Rf Sputtering ◽  
Band Alignment ◽  
Charge Carriers ◽  
Band Offsets ◽  
Conduction Band Offset ◽  
Cv Measurements ◽  
Czts Thin Films

We report a phase-pure kesterite Cu2ZnSnS4 (CZTS) thin films, synthesized using radio frequency (RF) sputtering followed by low-temperature H2S annealing and confirmed by XRD, Raman spectroscopy and XPS measurements. Subsequently, the band offsets at the interface of the CZTS/CdS heterojunction were systematically investigated by combining experiments and first-principles density functional theory (DFT) calculations, which provide atomic-level insights into the nature of atomic ordering and stability of the CZTS/CdS interface. A staggered type II band alignment between the valence and conduction bands at the CZTS/CdS interface was determined from Cyclic Voltammetry (CV) measurements and the DFT calculations. The conduction and valence band offsets were estimated at 0.10 and 1.21 eV, respectively, from CV measurements and 0.28 and 1.15 from DFT prediction. Based on the small conduction band offset and the predicted higher positions of the VBmax and CBmin for CZTS than CdS, it is suggested photogenerated charge carriers will be efficient separated across the interface, where electrons will flow from CZTS to the CdS and and vice versa for photo-generated valence holes. Our results help to explain the separation of photo-excited charge carriers across the CZTS/CdS interface and it should open new avenues for developing more efficient CZTS-based solar cells.

InN PHOTOCONDUCTORS ON DIFFERENT ORIENTATIONS OF Si SUBSTRATES

2012 ◽  
Vol 26 (31) ◽  
pp. 1250137 ◽  
Author(s):  
M. AMIRHOSEINY ◽  
Z. HASSAN ◽  
S. S. NG ◽  
L. S. CHUAH ◽  
M. A. AHMAD ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Ohmic Contact ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Indium Nitride ◽  
Rf Sputtering ◽  
Nitrogen Gas ◽  
Si Substrates ◽  
Current Voltage

We have fabricated photoconductors of indium nitride (InN) grown by radio frequency (RF) sputtering. The InN thin films were deposited on Si (100), Si (110) and Si (111) substrates at room temperature. The Ag/Al contact has been deposited by thermal evaporation in vacuum (10-5 Torr ) and then annealed under the flowing of the nitrogen gas environment in order to relieve stress and also induce any favorable reactions between metals and the semiconductor. Current–voltage (I–V) measurements after heat treatment at 400°C were carried out for samples in dark and illumination conditions. It was found that Ag/Al formed a good ohmic contact on top of InN . In addition, the characteristics of the contacts were significantly affected by the orientation of substrates.

Photoelectric Properties of Oxygen-Doped a-Si:H Prepared by rf Sputtering

1986 ◽  
Vol 25 (Part 1, No. 10) ◽  
pp. 1457-1464 ◽  
Author(s):  
Koarakot Jiranapakul ◽  
Kazuhiro Shirakawa ◽  
Junji Shirafuji
Keyword(s):  
Rf Sputtering ◽  
Photoelectric Properties
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