scholarly journals TEMPERATURE DEPENDENCE OF THE THERMALLY COUPLED LEVELS IN Er3+-DOPED BaY2F8 CRYSTAL TEMPERATURE SENSOR

2021 ◽  
Vol 20 (1) ◽  
pp. 1-8
Author(s):  
Shuai Wang ◽  
Yongfeng Ruan ◽  
Pengfei Wang
Keyword(s):  
Temperature Dependence ◽  
Temperature Sensor ◽  
Crystal Temperature

Temperature dependence of the resistance, impedance and capacitance of semitransparent PTB7-Th and PCBM sensor

2019 ◽  
Vol 33 (12) ◽  
pp. 1950110
Author(s):  
Muhammad Riaz ◽  
Khasan S. Karimov ◽  
Jameel-Un Nabi
Keyword(s):  
Light Intensity ◽  
Temperature Dependence ◽  
Temperature Sensor ◽  
Visual Control ◽  
Capacitance Measurement ◽  
Experimental Conditions ◽  
Temperature Resistance ◽  
Graphene Composite ◽  
Temperature Dependences ◽  
Resistance Coefficients

The temperature dependences of resistance, impedance and capacitance of semitransparent sensor having structure ITO/PTB7-Th:PC[Formula: see text]BM/Graphene composite (semisurface type) were investigated. The transparency of the sensor was 58–60%. The dependences of the resistance, impedance and capacitance at different frequencies 100 Hz, 1 kHz, 10 kHz, 100 kHz and 200 kHz and temperature in the range of 23.8–80[Formula: see text]C for the sensor were studied. It was observed that as the temperature increased from 23.8[Formula: see text]C to 80[Formula: see text]C, the resistance and impedance (at 1 kHz) of the samples decreased, on average, by a factor of 3.51 and 3.79, respectively. At same experimental conditions (1 kHz), the capacitances of the samples also decreased by a factor of 9.6. It was also noted that as frequency increased from 100 Hz to 200 kHz, the impedance of the sensor decreased by a factor of 21 and 12, at temperatures 24[Formula: see text]C and 58[Formula: see text]C, respectively. Under the same conditions, the capacitance decreased by a factor of 30 and 28, respectively. The temperature resistance coefficients were measured to be −1.31%/[Formula: see text]C, −1.30%/[Formula: see text]C, −1.27%/[Formula: see text]C, −0.84%/[Formula: see text]C, −0.72%/[Formula: see text]C and −0.33%/[Formula: see text]C for R, Z (100 Hz), Z (1 kHz), Z (10 kHz), Z (100 kHz) and Z (200 kHz), respectively. For capacitance measurement, the temperature capacitance coefficients were measured as −1.39%/[Formula: see text]C, −1.38%/[Formula: see text]C, −1.37%/[Formula: see text]C, −1.36%/[Formula: see text]C and −1.34%/[Formula: see text]C, respectively. The semitransparent PTB7-Th- and PC[Formula: see text]BM-based temperature sensor can be used for measurement of the temperature as a teaching aid in situations where visual control of illumination and light intensity is required.

High Temperature SiC Sensor with an Isolated Package

2013 ◽  
Vol 740-742 ◽  
pp. 1002-1005 ◽  
Author(s):  
Florin Draghici ◽  
Gheorghe Brezeanu ◽  
Ion Rusu ◽  
Florin Bernea ◽  
Phillippe Godignon
Keyword(s):  
High Temperature ◽  
Metallic Glass ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Temperature Sensor ◽  
Constant Current ◽  
Optical Investigation ◽  
Electrical Measurements ◽  
Forward Voltage ◽  
Sensor Structure

This paper presents an improved version and new results on a temperature sensor based on SiC Schottky Barrier Diode (SBD). SiC SBD structures of different areas were packaged in a metallic-glass case. The encapsulated sensor was electrically measured at several temperatures. A good linearity of the forward voltage measured at a constant current versus temperature dependence was obtained in the temperature range of 150-400°C where the sensor is meant to operate. Optical investigation, correlated with electrical measurements, prove the reliability of the sensor structure and of the package solutions at temperatures up to 400°C.

Study on a novel photonic crystal temperature sensor

2011 ◽  
Vol 7 (6) ◽  
pp. 419-422 ◽  
Author(s):  
Hai-wei Fu ◽  
Hui Zhao ◽  
Xue-guang Qiao ◽  
Yan Li ◽  
Da-zhuang Zhao ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Temperature Sensor ◽  
Crystal Temperature
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