Etalon for Nanometrology Produced by Anisotropic Etching

2021 ◽  
Vol 23 (4) ◽  
pp. 171-178
Author(s):  
Yu.V. Larionov ◽  
Keyword(s):  
Sample Surface ◽  
Anisotropic Etching ◽  
Geometric Parameters ◽  
National Scale ◽  
Linear Measurements ◽  
Important Condition ◽  
Rectangular Profile ◽  
Measurement Results

Possibilities and results of using relief structures produced by anisotropic etching as etalons for linear measurements in nanorange are discussed. Two types of the structures with different profiles and with two approaches to estimation of influence of its sophistication degree on measurement results are considered. Analyze of methods and means of measurements of its geometric parameters and comparison of uncertainness of measurement results are conducted. The important condition for diminishing the measurements uncertainness is taking into account irregularities of a sample surface. These irregularities were evaluated by TEM and CD-AFM. Results of harnessing these types of structures are different also. The bureau International des Poids et Mesures recommended the structure with rectangular profile and its attestation procedure as an example for all national committees on linewidth metrology in nanorange. The structure with trapezoid profile that induced hopes for decision of basic tasks of nanometrology in past is occurred to be poorly in demand even on national scale.

scholarly journals Laser scanning–based straightness measurement of precision bright steel rods at one point

2021 ◽  
Author(s):  
Tobias Schmid-Schirling ◽  
Lea Kraft ◽  
Daniel Carl
Keyword(s):  
Laser Scanning ◽  
Optical Measurement ◽  
Sample Surface ◽  
Homogeneous Sample ◽  
Industrial Manufacturing ◽  
Continuous Quality ◽  
Accuracy And Precision ◽  
Measurement Results ◽  
Important Quality ◽  
Working Principle

AbstractIn industrial manufacturing of bright steel rods, one important quality factor is the straightness or straightness deviation. Depending on the application, deviations of less than 0.1 mm per meter rod length are desired and can be reached with state-of-the-art manufacturing equipment. Such high-quality requirements can only be guaranteed with continuous quality control. Manual straightness measurements conducted offline using a dial gauge provide accurate results on single positions of the rod. We propose a contactless, optical measurement technique based on laser scanning which has the potential to be used inline during production to inspect all rods over the entire length. Only for calibration of the system the rod needs to be turned around its axis. For the measurement of straightness deviation, it is not required to turn the rod. The method is based on evaluating the intensity signal of the reflected laser radiation against the scan angle. It is shown that in combination with an accurate calibration, this signal can be used to determine the rod’s deviation from a straight rod. We explain the measurement and calibration principle as well as data evaluation. We present the experimental setup and first measurement results on a single position on several samples. For a homogeneous sample surface and neglecting laser drift, accuracy and precision were determined to be in the range of 10–20 μm. We discuss the working principle of a potential inline system.

Geometry of Structures Developed by Anisotropic Etching in the Nanometer Range

2021 ◽  
Vol 23 (3) ◽  
pp. 131-138
Author(s):  
Yu.V. Larionov ◽  
Keyword(s):  
Anisotropic Etching ◽  
Linear Measurements ◽  
Nanometer Range ◽  
Nanostructure Surface ◽  
Sidewall Surface

Geometric disadvantages of nanostructure surface developed by anisotropic etching of silicon are discussed. These disadvantages increase uncertainness of its sizes and impeded its using as an etalons for linear measurements. The greatest uncertainness are observed for structures with trapezoid profile. They make up due to defects on sidewalls of etched structures. The surface of a sidewall is proposed to be disposed in the [111] plane and so be absolutely flat. Really parts of a sidewall surface are deflected in stepwise way from the plane [111]. This phenomenon leads to deflection of angles between converging flat sections of etched structure from its known values for silicon. Consequence of this is most drastic to a measure MShps-2K due to its structure, technology of anisotropic etching and absence of required control. Sources of these surface disadvantages induced by anisotropic etching are discussed. Possibilities to decrease disadvantages are evaluated.

Laser scanning based straightness measurement of precision bright steel rods

2021 ◽  
Author(s):  
Tobias Schmid-Schirling ◽  
Lea Kraft ◽  
Daniel Carl
Keyword(s):  
Laser Scanning ◽  
Sample Surface ◽  
Homogeneous Sample ◽  
Industrial Manufacturing ◽  
Accuracy And Precision ◽  
Measurement Results ◽  
Important Quality ◽  
Working Principle ◽  
Dial Gauge ◽  
Straight Rod

Abstract In industrial manufacturing of bright steel rods one important quality factor is the straightness or straightness deviation. Depending on the application, deviations of less than 0.1 mm per meter rod length are desired and can be reached with state of the art manufacturing equipment. Such high quality requirements can only be guaranteed with continuos quality control. Manual straightness measurements conducted offline using a dial gauge provide accurate results on single positions of the rod. We propose a contactless, optical measurment technique based on laser scanning which has the potential to be used inline during production to inspect all rods over the entire length. The method is based on evaluating the intensity signal of the reflected laser radiation against the scan angle. It is shown, that in combination with an accurate calibration this signal can be used to determine the rod’s deviation from a straight rod. We explain the measurement and calibration principle as well as data evaluation. We present the experimental setup and first measurement results on a single position on several samples. For a homogeneous sample surface and neglecting laser drift, accuracy and precision were determined to be in the range of 10 - 20 µm. We discuss the working principle of a potential inline system.

Optimization of First Mode Sensitivity of V-Shaped AFM Cantilever Using Genetic Algorithm Method

2009 ◽  
Author(s):  
S. A. Moeini ◽  
M. H. Kahrobaiyan ◽  
M. Rahaeifard ◽  
M. T. Ahmadian
Keyword(s):  
Genetic Algorithm ◽  
Contact Stiffness ◽  
Sample Surface ◽  
Geometric Parameters ◽  
Design Parameters ◽  
Normal Contact ◽  
Genetic Algorithm Method ◽  
Normal Contact Stiffness ◽  
Afm Cantilever ◽  
Micro Cantilever

Atomic force microscopes (AFM) are widely used for feature detection and scanning surface topography of different materials. Contrast of topography images is significantly influenced by the sensitivity of AFM micro cantilever which means enhancement of sensitivity leads to increase of topography images resolution So, in the last years numerous scientists interested in studying the effects of different parameters such as geometric one on the sensitivity of AFM micro cantilevers. V-shape micro cantilever types of AFMs probe are widely used to scan various types of surfaces. In V-shape micro cantilevers, there are many geometric and design parameters which influence the flexural sensitivity of the micro beam, noticeably. In this paper evaluation of optimum geometric parameters and optimum cantilever slope is considered as a significant purpose in order to obtain maximum flexural sensitivity by using genetic algorithm optimization method. In the calculations, the normal and lateral interaction forces between AFM tip and sample surface is considered and modeled by linear springs which represent the contact stiffness of the sample surface. Also, a relation for flexural sensitivity of AFM cantilever as a function of geometric parameters and cantilever slope is derived which is used in optimization step by employing a genetic algorithm program. Using genetic algorithm method, the optimum geometric parameters and cantilever slope are calculated which maximize the flexural sensitivity of the first mode of a V-shape cantilever for various values of normal contact stiffness. These optimum parameters versus normal contact stiffness are presented in some result figures. The results show that for any contact stiffness, there are a cantilever slope and a set of geometrical parameters which provide the maximum sensitivity for AFM probe. Adopting these parameters for the design of V-shape micro cantilever according to the sample contact stiffness, maximum flexural sensitivity can be obtained, so that high contrast images are reachable.

scholarly journals Scanning ion-conductance microscope with modulation of the sample position along the Z-coordinate and separate Z-axial and lateral (X, Y) scanning

2021 ◽  
Vol 2086 (1) ◽  
pp. 012074
Author(s):  
M V Zhukov ◽  
S Yu Lukashenko ◽  
I D Sapozhnikov ◽  
M L Felshtyn ◽  
O M Gorbenko ◽  
...  
Keyword(s):  
Sample Surface ◽  
Geometric Parameters ◽  
Ion Conductance ◽  
Sample Position ◽  
The Stability ◽  
Safe Approach

Abstract Scanning ion-conductance microscope with independent piezoscanners in the lateral scanning plane XY and Z axis was designed and tested. For precise, fast and safe approach of the nanopipette to the sample surface, a coarse approach system based on a piezoinertial mover was used. Measurements of test periodic polymer structures were carried out using nanopipettes with an inner pipette diameter of about 100-150 nm. The optimal geometric parameters of the nanopipette were found and the resolution of the method was estimated. To increase the stability and reproducibility of SICM images, the Z-modulation of the position of the substrate with the sample was realized using a bimorph piezomembrane.

scholarly journals IMPROVEMENT OF LATERAL RESOLUTION UNDER DIMENSIONAL MEASUREMENTS OF NANORELIEF STEP STUCTURES

2019 ◽  
Vol 8 ◽  
pp. 183-190
Author(s):  
Ignat Vykhristyuk ◽  
Rodion Kulikov ◽  
Evgeny Sysoev
Keyword(s):  
Sample Surface ◽  
Sharp Edge ◽  
Lateral Resolution ◽  
Linear Measurements ◽  
Lateral Direction ◽  
Position Detection ◽  
Dimensional Measurements ◽  
Sharp Edges ◽  
Reconstructed Surface ◽  
Longitudinal Resolution

The phase shifting interferometry methods allow to reach longitudinal resolution up to ~ 0.1 nm, but value of lateral resolution remains on level of ~ 1 μm. For providing of high lateral resolution of linear measurements in the interference microscope profilometer it was proposed to use the sensor of sharp-edge position detection. Principle of sensor’s measurement is based on registration of laser spot intensity scattered by the measurement sample surface under displacement of sample in the lateral direction. Measurement process and experimental results are presented. The combining of measurement results performed by the profilometer and the sensor of sharp-edge position detection can allow to increase the resolution of measurement of distance between sharp edges on the reconstructed surface nanorelief.

Application of 3D Nanorelief Sharp-Edge Detection Method in the Optical Interference Microscope

2017 ◽  
Vol 870 ◽  
pp. 34-40
Author(s):  
Evgeny V. Sysoev ◽  
Yuri V. Chugui ◽  
Rodion V. Kulikov ◽  
Ignat A. Vykhristyuk ◽  
Liang Chia Chen ◽  
...  
Keyword(s):  
Sample Surface ◽  
Sharp Edge ◽  
Lateral Resolution ◽  
Linear Measurements ◽  
Interference Microscope ◽  
Lateral Direction ◽  
Position Detection ◽  
Reconstructed Surface ◽  
Edge Detection Method ◽  
Longitudinal Resolution

As is well known, the phase-shifting interferometry techniques allow to reach longitudinal resolution to ~ 0.1 nm, but the value of lateral resolution remains at the level of ~ 1 mm. For providing of high lateral resolution of linear measurements in the interference microscope profilometer it was proposed to use a position detection sensor of sharp edge. Principle of sensor’s measurement is based on registration of laser spot intensity scattered by the measurement sample surface under displacement of sample in the lateral direction. The paper shows the prototype scheme of measurement system containing the Linnik interferometer used for surface nanorelief measurement and a position detection module of sharp edge. Measurement process and experimental results are presented. The combining of measurement results performed by the Linnik interferometer and a position detection sensor of sharp edge can allow us to precisely (better then diffraction limit) define the position of sharp edge on the reconstructed surface nanorelief.

Field ion microscopy

1988 ◽  
Vol 46 ◽  
pp. 434-435
Author(s):  
Gert Ehrlich
Keyword(s):  
Low Temperature ◽  
Sample Surface ◽  
Low Pressure ◽  
Radius Of Curvature ◽  
Field Ion Microscopy ◽  
Phosphor Screen ◽  
Ion Microscopy ◽  
Field Ion Microscope

The field ion microscope, devised by Erwin Muller in the 1950's, was the first instrument to depict the structure of surfaces in atomic detail. An FIM image of a (111) plane of tungsten (Fig.l) is typical of what can be done by this microscope: for this small plane, every atom, at a separation of 4.48Å from its neighbors in the plane, is revealed. The image of the plane is highly enlarged, as it is projected on a phosphor screen with a radius of curvature more than a million times that of the sample. Müller achieved the resolution necessary to reveal individual atoms by imaging with ions, accommodated to the object at a low temperature. The ions are created at the sample surface by ionization of an inert image gas (usually helium), present at a low pressure (< 1 mTorr). at fields on the order of 4V/Å.

A technique to prepare cross-sectional TEM specimens of semiconducting devices

1986 ◽  
Vol 44 ◽  
pp. 742-743
Author(s):  
A. K. Rai ◽  
P. P. Pronko
Keyword(s):  
Thin Films ◽  
Surface Region ◽  
Sample Surface ◽  
Specific Region ◽  
Cross Sectional ◽  
Thin Sections ◽  
The Past ◽  
Device Structures ◽  
Ion Implanted

Several techniques have been reported in the past to prepare cross(x)-sectional TEM specimen. These methods are applicable when the sample surface is uniform. Examples of samples having uniform surfaces are ion implanted samples, thin films deposited on substrates and epilayers grown on substrates. Once device structures are fabricated on the surfaces of appropriate materials these surfaces will no longer remain uniform. For samples with uniform surfaces it does not matter which part of the surface region remains in the thin sections of the x-sectional TEM specimen since it is similar everywhere. However, in order to study a specific region of a device employing x-sectional TEM, one has to make sure that the desired region is thinned. In the present work a simple way to obtain thin sections of desired device region is described.

The Basic Physical Principles of Ion, Electron, and X-Ray Detectors and Their Application to Microanalysis

1985 ◽  
Vol 43 ◽  
pp. 154-157
Author(s):  
A.J. Tousimis
Keyword(s):  
Ion Beam ◽  
Depth Resolution ◽  
Sample Surface ◽  
High Energy ◽  
X Rays ◽  
X Ray ◽  
Electrons And Ions ◽  
Spatial Depth ◽  
Minimum Surface Area ◽  
Physical Principles

An integral and of prime importance of any microtopography and microanalysis instrument system is its electron, x-ray and ion detector(s). The resolution and sensitivity of the electron microscope (TEM, SEM, STEM) and microanalyzers (SIMS and electron probe x-ray microanalyzers) are closely related to those of the sensing and recording devices incorporated with them.Table I lists characteristic sensitivities, minimum surface area and depth analyzed by various methods. Smaller ion, electron and x-ray beam diameters than those listed, are possible with currently available electromagnetic or electrostatic columns. Therefore, improvements in sensitivity and spatial/depth resolution of microanalysis will follow that of the detectors. In most of these methods, the sample surface is subjected to a stationary, line or raster scanning photon, electron or ion beam. The resultant radiation: photons (low energy) or high energy (x-rays), electrons and ions are detected and analyzed.

Sign in / Sign up

Export Citation Format

Share Document