Geometry of Structures Developed by Anisotropic Etching in the Nanometer Range
Geometric disadvantages of nanostructure surface developed by anisotropic etching of silicon are discussed. These disadvantages increase uncertainness of its sizes and impeded its using as an etalons for linear measurements. The greatest uncertainness are observed for structures with trapezoid profile. They make up due to defects on sidewalls of etched structures. The surface of a sidewall is proposed to be disposed in the [111] plane and so be absolutely flat. Really parts of a sidewall surface are deflected in stepwise way from the plane [111]. This phenomenon leads to deflection of angles between converging flat sections of etched structure from its known values for silicon. Consequence of this is most drastic to a measure MShps-2K due to its structure, technology of anisotropic etching and absence of required control. Sources of these surface disadvantages induced by anisotropic etching are discussed. Possibilities to decrease disadvantages are evaluated.