Cascode Monolithic Integrated Circuit of a Low-Noise Amplifier in the Frequency Range of 8-12 GHz on a Gallium Nitride Nanoheterostructure

2020 ◽  
Vol 22 (2) ◽  
pp. 98-102
Author(s):  
S.A. Gamkrelidze ◽  
◽  
P.P. Maltsev ◽  
Y.V. Fedorov ◽  
D.L. Gnatyuk ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Integrated Circuit ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Frequency Range ◽  
Monolithic Integrated Circuit ◽  
Noise Amplifier

243 GHz low-noise amplifier MMICs and modules based on metamorphic HEMT technology

2014 ◽  
Vol 6 (3-4) ◽  
pp. 215-223 ◽  
Author(s):  
Axel Tessmann ◽  
Volker Hurm ◽  
Arnulf Leuther ◽  
Hermann Massler ◽  
Rainer Weber ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Noise Figure ◽  
Coplanar Waveguide ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
High Electron ◽  
Monolithic Integrated Circuit ◽  
Electron Mobility Transistors ◽  
Noise Amplifier

Two compact H-band (220–325 GHz) low-noise millimeter-wave monolithic integrated circuit (MMIC) amplifiers have been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 and 35 nm metamorphic high electron mobility transistors (mHEMTs). For low-loss packaging of the circuits, a set of waveguide-to-microstrip transitions has been realized on 50-μm-thick GaAs substrates demonstrating an insertion loss of <0.5 dB at 243 GHz. By applying the 50 nm gate-length process, a four-stage cascode amplifier module achieved a small-signal gain of 30.6 dB at 243 GHz and more than 28 dB in the bandwidth from 218 to 280 GHz. A second amplifier module, based on the 35-nm mHEMT technology, demonstrated a considerably improved gain of 34.6 dB at 243 GHz and more than 32 dB between 210 and 280 GHz. At the operating frequency, the two broadband low-noise amplifier modules achieved a room temperature noise figure of 5.6 dB (50 nm) and 5.0 dB (35 nm), respectively.

scholarly journals A photoreceiver with an integrated X-band low-noise amplifier

2021 ◽  
pp. 41-46
Author(s):  
Igor Yunusov ◽  
Alekcey Kondratenko ◽  
Vadim Arykov ◽  
Mikhail Stepanenko ◽  
Pavel Troyan
Keyword(s):  
Transmission Lines ◽  
Signal Transmission ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Frequency Range ◽  
Optical Carrier ◽  
Band Frequency ◽  
X Band ◽  
Significant Extension ◽  
Noise Amplifier

The paper presents development results for a photodetector module with an integrated lownoise amplifier. The photodetector is based on a commercial indium-phosphide photodiode and a custom-designed adapter board and allows to use an optical carrier with wavelengths of 1.31 and 1.55 μm and performs optoelectronic conversion for electrical signals into 0–50 GHz range. The developed gallium arsenide low-noise amplifier is used to compensate photodiode conversion loss in the X-band frequency range. The photodetector module is intended for use as a microwave photonic link receiver, which provides a significant extension of the signal transmission range in comparison with classical types of transmission lines

scholarly journals INVESTIGATION OF THE DESIGN OF MEASURING EQUIPMENT INFLUENCE ON THE OPERATION OF A SOLID-STATE POWER AMPLIFIER

2020 ◽  
Vol 259 (4) ◽  
pp. 56-62
Author(s):  
V.I. Shalomanov ◽  
D.A. Sarapultsev ◽  
M.R. Sizov
Keyword(s):  
Solid State ◽  
Power Amplifier ◽  
Measuring Equipment ◽  
State Power ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Frequency Range ◽  
Operating Frequency Range ◽  
Noise Amplifier ◽  
Parasitic Components

The measuring equipment influences the operation of solid-state power amplifier by inducing parasitic components in the operating frequency range. Operation of differential amplifier and a low noise amplifier were studied. The measuring equipment for these devices was developed and the issue stated was experimentally solved.

scholarly journals Design of Low Power Low Noise Amplifier using Gm-boosted Technique

2018 ◽  
Vol 9 (3) ◽  
pp. 685 ◽  
Author(s):  
Maizan Muhamad ◽  
Norhayati Soin ◽  
Harikrishnan Ramiah
Keyword(s):  
Low Power ◽  
Circuit Design ◽  
Integrated Circuit ◽  
Wireless Lan ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Center Frequency ◽  
Design Specifications ◽  
Noise Amplifier

This paper presents the development of low noise amplifier integrated circuit using 130nm RFCMOS technology. The low noise amplifier function is to amplify extremely low noise amplifier without adding noise and preserving required signal to a noise ratio. A detailed methodology and analysis that leads to a low power LNA are being discussed throughout this paper. Inductively degenerated and Gm-boosted topology are used to design the circuit. Design specifications are focused for 802.11b/g/n IEEE Wireless LAN Standards with center frequency of 2.4 GHz. The best low noise amplifier provides a power gain (S21) of 19.841 dB with noise figure (NF) of 1.497 dB using the gm-boosted topology while the best low power amplifier drawing 4.19mW power from a 1.2V voltage supply using the inductively degenerated.

scholarly journals Low Noise Amplifier with Improved Gain and Reduced Noise-Figure in 90nm CMOS Technology

2021 ◽  
pp. 85-94
Author(s):  
Dr. Rashmi S B ◽  
Mr. Raghavendra B ◽  
Mr. Sanketh V
Keyword(s):  
Reflection Coefficient ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Common Source ◽  
Frequency Range ◽  
Common Gate ◽  
Noise Amplifier

A CMOS low noise amplifier (LNA) for ultra-wideband (UWB) wireless applications is presented in this paper. The proposed CMOS low noise amplifier (LNA) is designed using common-gate (CG) topology as the first stage to achieve ultra-wideband input matching. The common-gate (CG) is cascaded with common- source (CS) topology with current-reused configuration to enhance the gain and noise figure (NF) performance of the LNA with low power. The Buffer stage is used as output matching network to improve the reflection coefficient. The proposed low noise amplifier (LNA) is implemented using CADENCE Virtuoso Analog and Digital Design Environment tool in 90nm CMOS technology. The LNA provides a forward voltage gain or power gain (S21) of 32.34dB , a minimum noise figure of 2dB, a reverse-isolation (S12) of less than - 38.74dB and an output reflection coefficient (S22) of less than -7.4dB for the entire ultra-wideband frequency range. The proposed LNA has an input reflection coefficient (S11) of less than -10dB for the ultra-wideband frequency range. It achieves input referred 1-dB compression point of 78.53dBm and input referred 3-dB compression point of 13dBm. It consumes only 24.226mW of power from a Vdd supply of 0.7V.

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