scholarly journals Noise performance of an AlGaN/GaN monolithic microwave integrated circuit (MMIC) low‐noise amplifier under laser exposure

2020 ◽  
Vol 14 (5) ◽  
pp. 409-413
Author(s):  
Alina Caddemi ◽  
Emanuele Cardillo ◽  
Salvatore Patanè ◽  
Claudia Triolo
Keyword(s):  
Integrated Circuit ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Laser Exposure ◽  
Microwave Integrated Circuit ◽  
Noise Performance ◽  
Monolithic Microwave Integrated Circuit ◽  
Noise Amplifier

Design of a Ku-band MMIC LNA with a Simple T-type Input Matching Network

2020 ◽  
Vol 29 (11) ◽  
pp. 2020006
Author(s):  
Tian Qi ◽  
Songbai He ◽  
Cheng Zhong ◽  
Zhitao Zhu
Keyword(s):  
Integrated Circuit ◽  
Return Loss ◽  
Noise Figure ◽  
Low Noise ◽  
Matching Network ◽  
Monolithic Microwave Integrated Circuit ◽  
Input Matching ◽  
Satellite Applications ◽  
Feedback Structure ◽  
Noise Amplifier

In this paper, the design of a wideband monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) fabricated in 0.13-[Formula: see text]m GaAs pHEMT process is presented. A simple T-type input matching network (IMN) and a source feedback structure are employed to achieve low noise figure (NF). The MMIC LNA, which operates across 12–18[Formula: see text]GHz, can be used for satellite applications. Experimental results show an NF around 1.5[Formula: see text]dB in 12–17.5[Formula: see text]GHz and a minimum NF of 1.21[Formula: see text]dB at 16.5[Formula: see text]GHz. In addition, a flat small-signal gain of [Formula: see text][Formula: see text]dB is achieved at 13.5–17.5[Formula: see text]GHz. The input return loss is lower than [Formula: see text] dB at 12–14.5[Formula: see text]GHz and the output return loss is lower than [Formula: see text] dB at 12–17[Formula: see text]GHz. The power consumed is lower than 0.3[Formula: see text]W and the [Formula: see text] (1-dB compression point) output power is around 13[Formula: see text]dBm.

scholarly journals Design of Low Noise Amplifier for WLAN using pHEMT

2020 ◽  
Vol 9 (2) ◽  
pp. 272
Author(s):  
G. Thirunavukkarasu ◽  
G. Murugesan
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Low Power Consumption ◽  
Systematic Design ◽  
Noise Performance ◽  
Design And Manufacturing ◽  
Noise Amplifier ◽  
Minimum Noise ◽  
Minimum Noise Figure

The low power consumption devices are frequently focused in design and manufacturing wireless communication system. This paper gives a systematic design of a low noise amplifier for WLAN application aimed to obtain minimum noise figure. The simulation result shows that the noise figure is in the appreciable level (1.67 dB). The maximum gain is greater than 10 dB. These are the predominant requirements of an LNA. Also it posses good stability and the LNA design uses pHEMT for its appreciable noise performance.  

scholarly journals Design of Low Power Low Noise Amplifier using Gm-boosted Technique

2018 ◽  
Vol 9 (3) ◽  
pp. 685 ◽  
Author(s):  
Maizan Muhamad ◽  
Norhayati Soin ◽  
Harikrishnan Ramiah
Keyword(s):  
Low Power ◽  
Circuit Design ◽  
Integrated Circuit ◽  
Wireless Lan ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Center Frequency ◽  
Design Specifications ◽  
Noise Amplifier

This paper presents the development of low noise amplifier integrated circuit using 130nm RFCMOS technology. The low noise amplifier function is to amplify extremely low noise amplifier without adding noise and preserving required signal to a noise ratio. A detailed methodology and analysis that leads to a low power LNA are being discussed throughout this paper. Inductively degenerated and Gm-boosted topology are used to design the circuit. Design specifications are focused for 802.11b/g/n IEEE Wireless LAN Standards with center frequency of 2.4 GHz. The best low noise amplifier provides a power gain (S21) of 19.841 dB with noise figure (NF) of 1.497 dB using the gm-boosted topology while the best low power amplifier drawing 4.19mW power from a 1.2V voltage supply using the inductively degenerated.

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