Influence of Light on the Gas Sensitivity of the Thin Films of Tin Dioxide to Ethanol Vapors at Room Temperature

2017 ◽  
Vol 19 (1) ◽  
pp. 34-40
Author(s):  
V.V. Simakov ◽  
◽  
I.V. Sinev ◽  
A.V. Smirnov ◽  
I.D. Osyko ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Tin Dioxide ◽  
Gas Sensitivity

scholarly journals Study of properties of electrical conductivity of Tin dioxide thin films treated with Xenon impulse radiation used as Gas sensors

2009 ◽  
Vol 6 (4) ◽  
pp. 693-697
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Short Duration ◽  
Gas Sensors ◽  
Tin Dioxide ◽  
Experimental Result ◽  
Gas Sensitivity ◽  
Gas Concentration ◽  
Similar Character

During of Experimental result of this work , we found that the change of electrical conductivity proprieties of tin dioxide with the change of gas concentration at temperatures 260oC and 360oC after treatment by photons rays have similar character after treatment isothermally. We found that intensive short duration impulse annealing during the fractions of a second leads to crystallization of the films and to the high values of its gas sensitivity.

scholarly journals Enhancement of SnO2 for gas sensing applications

2021 ◽  
Vol 32 (3) ◽  
pp. 63
Author(s):  
O. S. Mahdi ◽  
Nadheer Jassim Mohammed
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Gas Sensing ◽  
Rf Magnetron Sputtering ◽  
Ethanol Vapor ◽  
Gas Sensitivity ◽  
Sensing Applications ◽  
Sno2 Thin Films ◽  
The Rich ◽  
Reactive Rf Magnetron Sputtering

Thin films of SnO2 were deposited by reactive RF magnetron sputtering. It was shown that the films possess gas sensitivity to ethanol vapor at room temperature. XRD, SEM, and EDX measurements of thin films were investigated. Annealing of SnO2 thin films at 800 °С is polycrystalline and grain size of SnO2 in the range about 12 nm. The growth of SnO2 with annealing to 800 °C leads to the percolation nanorods structure. EDX clearly explains the rich of Sn reached 70% annealing. The conductivity of SnO2 nanorods has been increasing at room temperature for ethanol vapors. 

Synthesis and structural characterization of rutile SnO2 nanocrystals

2003 ◽  
Vol 18 (6) ◽  
pp. 1289-1292 ◽  
Author(s):  
Zhiwen Chen ◽  
J. K. L. Lai ◽  
C. H. Shek ◽  
Haydn Chen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Pulse Laser Deposition ◽  
Pulse Laser ◽  
Tin Dioxide ◽  
Laser Deposition ◽  
Gas Sensitivity ◽  
Transmission Electron ◽  
Average Grain Size

Nanocrystalline tin dioxide (SnO2) thin films were prepared on glass substrate by pulse laser deposition for the first time. The thin films were characterized for their composition, morphology, and crystalline structure by x-ray diffraction, transmission electron microscopy, and high-resolution transmission electron microscopy. It was found that the thin films consisted only of the tetragonal phase SnO2 with no structural change, and they were well crystallized during deposition. In most cases, SnO2 particles were overlapped, predominantly grown on preferred (101) plane, and connected with two or three neighbors through necks. The average grain size of the as-prepared thin films was about 12 nm. These facts are of great importance for sensor characteristics, since smaller grains and preferred orientation properties provide higher gas sensitivity to the whole thin films. Our findings indicate that the n-type wide-band-gas semiconductor nanocrystalline thin films can be manipulated by using pulse laser deposition techniques, offering new opportunities to control material fabrication.

CO and NO2 gas sensitivity of nanocrystalline tin dioxide thin films doped with Pd, Ru and Rh

2002 ◽  
Vol 21 (1-2) ◽  
pp. 105-111 ◽  
Author(s):  
O.V Safonova ◽  
G Delabouglise ◽  
B Chenevier ◽  
A.M Gaskov ◽  
M Labeau
Keyword(s):  
Thin Films ◽  
Tin Dioxide ◽  
Gas Sensitivity

scholarly journals Morphology of Gas Sensitive Tin Dioxide Thin Films Operating at Room Temperature

2015 ◽  
Vol 15 (4) ◽  
pp. 17-21
Author(s):  
S. B. Venig ◽  
◽  
O. S. Mahdi ◽  
I. V. Malyar ◽  
I. V. Sinev ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Tin Dioxide

Dye-Sensitization of Tin Dioxide via the Functionalization of Oxide Surfaces with Trialkynylorganotins

2005 ◽  
Vol 876 ◽  
Author(s):  
Thierry Toupance ◽  
Mervyn de Borniol ◽  
Bernard Jousseaume ◽  
Gil Vilaça ◽  
Hubert Cachet ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Tin Dioxide ◽  
Photoelectrochemical Cells ◽  
Oxide Surface ◽  
Light Illumination ◽  
Intrinsic Properties ◽  
Dye Sensitization ◽  
Perylene Dye ◽  
White Light Illumination

AbstractThe surface modification of nanoporous tin dioxide materials was achieved with trialkynylorganotin(IV) (C4H9-C=C)3Sn-(CH2)n(C10H20) (n = 4,6)1 endowed with a perylene dye to yield powders containing up to 0.13 mmol.g-1 of perylene unit or dye-modified thin films. Irreversible chemisorption occurred in solution at room temperature to give perylene dye grafted at the oxide surface via the cleavage of the three tin-alkynide bonds of the precursor and the formation of Snbulk-O-Sn-Cdye linkages. The photoelectrochemical cells made with the 1-modified films demonstrated maximum incident photon to current efficiency (IPCE) as high as 18% at 430 nm under white light illumination. The performances of the cells were interpreted in terms of the intrinsic properties of tin dioxide and aggregation of the perylene dye.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

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