scholarly journals A reliable approach to a rapid calculation of the grain size of polycrystalline thin films after excimer laser crystallization

2015 ◽  
Vol 49 (5) ◽  
pp. 687-691
Author(s):  
Chil-Chyuan Kuo
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Excimer Laser ◽  
Laser Crystallization ◽  
Polycrystalline Thin Films ◽  
Rapid Calculation ◽  
Excimer Laser Crystallization

A Projection-Type Excimer-Laser Crystallization System For Ultra-Large Grain Growth Of Si Thin-Films

1999 ◽  
Vol 558 ◽  
Author(s):  
Chang-Ho Oh ◽  
Mitsuru Nakata ◽  
Masakiyo Matsumura
Keyword(s):  
Thin Films ◽  
Phase Shift ◽  
Excimer Laser ◽  
Laser Crystallization ◽  
Optical Lens ◽  
System A ◽  
Optical Projection ◽  
Crystallization System ◽  
Excimer Laser Crystallization ◽  
Phase Shift Mask

ABSTRACTWe have proposed a new excimer-laser crystallization system based on an optical projection concept. In the proposed system, a collimated excimer-laser light pulse is irradiated to Si thin-films on a glassy substrate, through a phase-shift mask and an optical lens system. Using oneand two-dimensional phase-shift masks, we have examined feasibility of the proposed method.

Lateral Grain Growth in the Excimer Laser Crystallization of Poly-Si

1994 ◽  
Vol 321 ◽  
Author(s):  
H. Kuriyama ◽  
K. Sano ◽  
S. Ishida ◽  
T. Nohda ◽  
Y. Aya ◽  
...  
Keyword(s):  
Grain Size ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Field Effect Mobility ◽  
Laser Crystallization ◽  
Excimer Laser Annealing ◽  
Short Processing Time ◽  
Low Temperature Processing ◽  
Excimer Laser Crystallization ◽  
Annealing Method

ABSTRACTWe have succeeded in obtaining nondoped, thin poly-Si film (thickness ∼500Å) with excellent crystallinity and large grain size (Maximum grain size ∼4.5 μ m) by an excimer laser annealing Method, which offers the features of low-temperature processing and a short processing time. The grain size distribution shrinks in the region around 1.5 μ m and this poly-Si film exhibits a strong (111) crystallographic orientation. Poly-Si thin film transistors using these films show quite a high field effect mobility of 440cm2/V · s below 600°C process.

Excimer Laser Crystallization of Nanocrystalline Silicon Thin Films

2015 ◽  
Vol 1120-1121 ◽  
pp. 361-368
Author(s):  
Li Jie Deng ◽  
Wei He ◽  
Zheng Ping Li
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Silicon Film ◽  
Threshold Energy ◽  
Nanocrystalline Silicon ◽  
Lateral Growth ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Excimer Laser Crystallization

Nanocrystalline silicon (nc-Si) thin film on glass substrate is subjected to excimer laser crystallized by varying the laser energy density in the range of 50~600 mJ/cm2. The effect of excimer laser crystallization on the structure of silicon film is investigated using Raman spectroscopy, X-ray diffraction, atomic force microscopy and scanning electron microscopy. The results show that polycrystalline silicon thin films can be obtained by excimer laser crystallization of nc-Si films. A laser threshold energy density of 200 mJ/cm2 is estimated from the change of crystalline fraction and surface roughness of the treated films. The growth of grain is observed and the crystallization mechanism is discussed based on the super lateral growth model. The nanocrystalline silicon grains in the films act as seeds for lateral growth to large grains.

Fabrication of large grain size p-Si film by phase modulated excimer laser crystallization

2012 ◽  
Vol 20 (1) ◽  
pp. 58-63
Author(s):  
张健 ZHANG Jian ◽  
林广平 LIN Guang-ping ◽  
张睿 ZHANG Rui ◽  
崔国宇 CUI Guo-yu ◽  
李传南 LI Chuan-nan
Keyword(s):  
Grain Size ◽  
Excimer Laser ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization
Sign in / Sign up

Export Citation Format

Share Document