Analysis and design of transformer-based CMOS ultra-wideband millimeter-wave circuits for wireless applications: a review

2020 ◽  
Vol 21 (1) ◽  
pp. 97-115 ◽  
Author(s):  
Yi-ming Yu ◽  
Kai Kang
Keyword(s):  
Millimeter Wave ◽  
Ultra Wideband ◽  
Analysis And Design ◽  
Wireless Applications ◽  
Millimeter Wave Circuits

scholarly journals Band notched self complementaryultra wideband antenna for wireless applications

2018 ◽  
Vol 7 (2.8) ◽  
pp. 529 ◽  
Author(s):  
Ch Ramakrishna ◽  
G A.E.Satish Kumar ◽  
P Chandra Sekhar Reddy
Keyword(s):  
High Frequency ◽  
Return Loss ◽  
Wide Band ◽  
Ultra Wideband ◽  
Impedance Bandwidth ◽  
Relative Dielectric Permittivity ◽  
Frequency Range ◽  
Ground Structure ◽  
Wireless Applications ◽  
Patch Edge

This paper presents a band notched WLAN self complementaryultra wide band antenna for wireless applications. The proposed antenna encounters a return loss (RL) less than -10dB for entire ultra wideband frequency range except band notched frequency. This paper proposes a hexagon shape patch, edge feeding, self complementary technique and defective ground structure. The antenna has an overall dimensionof 28.3mm × 40mm × 2mm, builton  substrate FR4 with a relative dielectric permittivity 4.4. And framework is simulated finite element method with help of high frequency structured simulator HFSSv17.2.the proposed antenna achieves a impedance bandwidth of 8.6GHz,  band rejected WLAN frequency range 5.6-6.5 GHz with  vswr is less than 2.

scholarly journals Design of an Ultra-Wideband Microstrip-to-Slotline Transition on Low-Permittivity Substrate

Electronics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 1329
Author(s):  
Jung Seok Lee ◽  
Gwan Hui Lee ◽  
Wahab Mohyuddin ◽  
Hyun Chul Choi ◽  
Kang Wook Kim
Keyword(s):  
Microstrip Line ◽  
Return Loss ◽  
Analytical Formula ◽  
Parameter Tuning ◽  
Ultra Wideband ◽  
Design Parameters ◽  
Analytical Line ◽  
Cross Sectional ◽  
Analysis And Design ◽  
Low Permittivity

Analysis and design of an ultra-wideband microstrip-to-slotline transition on a low permittivity substrate is presented. Cross-sectional structures along the proposed transition are analyzed using conformal mapping assuming quasi-TEM modes, attaining one analytical line impedance formula with varying design parameters. Although the slotline is a non-TEM transmission line, the transitional structures are configured to have quasi-TEM modes before forming into the slotline. The line impedance is optimally tapered using the Klopfenstein taper, and the electric field shapes are smoothly transformed from microstrip line to slotline. The analytical formula is accurate within 5% difference, and the final transition configuration can be designed without parameter tuning. The implemented microstrip-to-slotline transition possesses insertion loss of less than 1.5 dB per transition and return loss of more than 10 dB from 4.4 to over 40 GHz.

A 31.7-GHz high linearity millimeter-wave CMOS LNA using an ultra-wideband input matching technique

2012 ◽  
Vol 33 (12) ◽  
pp. 125011
Author(s):  
Geliang Yang ◽  
Zhigong Wang ◽  
Zhiqun Li ◽  
Qin Li ◽  
Zhu Li ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Ultra Wideband ◽  
High Linearity ◽  
Input Matching ◽  
Matching Technique ◽  
Cmos Lna
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