scholarly journals Using simulated annealing to generate input pairs to measure the maximum power dissipation in combinational CMOS circuits

2005 ◽  
Vol 2 (4) ◽  
pp. 115-120 ◽  
Author(s):  
Alberto Palacios Pawlovsky
Keyword(s):  
Simulated Annealing ◽  
Power Dissipation ◽  
Maximum Power ◽  
Cmos Circuits

Power-Delay Trade-Offs in Complementary Metal-Oxide Semiconductor Circuits Using Self and Optimum Bulk Control

2020 ◽  
Vol 18 (3) ◽  
pp. 210-215
Author(s):  
Shubham Tayal ◽  
Sunil Jadav
Keyword(s):  
Power Dissipation ◽  
Complementary Metal Oxide Semiconductor ◽  
Joint Effect ◽  
Sequential Circuits ◽  
Vlsi Circuits ◽  
Oxide Semiconductor ◽  
Cmos Circuits ◽  
Trade Offs ◽  
Self Bias ◽  
Semiconductor Circuits

Power dissipation and delay are the challenging issues in the design of VLSI circuits. This manuscript explores joint effect of Self-Bias transistors (SBTs) and Optimum Bulk Bias Technique (OBBT) on CMOS circuits. Earlier investigations on SBTs shows decrease in power dissipation of combinational as well as sequential circuits. We extend the analysis by studying the effect of OBBT on the static and dynamic power of CMOS circuits with SBTs coupled amid the pull-up/down network and the supply bars. Extensive SPICE simulations have been carried out in 0.18 μm technology. Results demonstrate that, a 73% drop in power in case of combinational circuits and 43% in case of sequential circuits can be accomplished by engaging OBBT in digital circuits. Trade-off between power and delay is also been presented.

scholarly journals Estimation of Leakage Power and Delay in CMOS Circuits

2020 ◽  
Vol 4 (7) ◽  
pp. 14-19
Author(s):  
Mohasinul Huq N Md ◽  
Mohan Das S ◽  
Bilal N Md
Keyword(s):  
Power Dissipation ◽  
Supply Voltage ◽  
Full Adder ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Leakage Power ◽  
Nand Gate ◽  
High Threshold ◽  
Cmos Circuits ◽  
Low Leakage

This paper presents an estimation of leakage power and delay for 1-bit Full Adder (FA)designed which is based on Leakage Control Transistor (LCT) NAND gates as basic building block. The main objective is to design low leakage full adder circuit with the help of low and high threshold transistors. The simulations for the designed circuits performed in cadence virtuoso tool with 45 nm CMOS technology at a supply voltage of 0.9 Volts. Further, analysis of effect of parametric variation on leakage current and propagation delay in CMOS circuits is performed. The saving in leakage power dissipation for LCT NAND_HVT gate is up to 72.33% and 45.64% when compared to basic NAND and LCT NAND gate. Similarly for 1-bit full adder the saving is up to 90.9% and 40.08% when compared to basic NAND FA and LCT NAND.

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