scholarly journals Machine learning model for predicting threshold voltage by taper angle variation and word line position in 3D NAND flash memory

2020 ◽  
Vol 17 (22) ◽  
pp. 20200345-20200345
Author(s):  
Dong Chan Lee ◽  
Jang Kyu Lee ◽  
Hyungcheol Shin
Keyword(s):  
Machine Learning ◽  
Threshold Voltage ◽  
Flash Memory ◽  
Learning Model ◽  
Nand Flash ◽  
Line Position ◽  
Nand Flash Memory ◽  
Angle Variation ◽  
Taper Angle ◽  
Machine Learning Model

scholarly journals Machine Learning-Based Optimization Technique for High-Capacity V-NAND Flash Memory

2021 ◽  
Author(s):  
Jisuk Kim ◽  
Earl Kim ◽  
Daehyeon Lee ◽  
Taeheon Lee ◽  
Daesik Ham ◽  
...  
Keyword(s):  
Machine Learning ◽  
Genetic Algorithm ◽  
Flash Memory ◽  
State Of The Art ◽  
Optimization Technique ◽  
High Capacity ◽  
Turnaround Time ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
The Individual

Abstract In the NAND flash manufacturing process, thousands of internal electronic fuses (eFuse) should be tuned in order to optimize performance and validity. In this paper, we propose a machine learning-based optimization technique that can automatically tune the individual eFuse value based on a deep learning and genetic algorithm. Using state-of-the-art triple-level cell (TLC) V-NAND flash wafers, we trained our model and validated its effectiveness. The experimental results show that our technique can automatically optimize NAND flash memory, thus reducing total turnaround time (TAT) by 70 % compared with the manual-based process.

scholarly journals Analysis and Optimization of Threshold Voltage Variability by Polysilicon Grain Size Simulation in 3D NAND Flash Memory

2020 ◽  
Vol 8 ◽  
pp. 140-144 ◽  
Author(s):  
Tao Yang ◽  
Zhiliang Xia ◽  
Dandan Shi ◽  
Yingjie Ouyang ◽  
Zongliang Huo
Keyword(s):  
Grain Size ◽  
Threshold Voltage ◽  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory
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