scholarly journals Fabrication and characterization of hollow waveguide distributed bragg reflectors

2004 ◽  
Vol 1 (4) ◽  
pp. 81-85 ◽  
Author(s):  
Yasuki Sakurai ◽  
Akihiro Matsutani ◽  
Fumio Koyama
Keyword(s):  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Hollow Waveguide ◽  
Fabrication And Characterization

Design, fabrication and characterization of polymer-based distributed Bragg reflectors for resonant cavities

2003 ◽  
Author(s):  
M. B. Vaello ◽  
J. Tito ◽  
Ricardo M. Mallavia ◽  
M. M. Sanchez ◽  
S. Fernandez de Avila ◽  
...  
Keyword(s):  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Resonant Cavities ◽  
Fabrication And Characterization

AFM characterization of AlGaAs/AlAs distributed Bragg reflectors

2018 ◽  
pp. 543-546
Author(s):  
A Klein ◽  
M Zorn ◽  
U Zeimer ◽  
R Schneider ◽  
A Oster ◽  
...  
Keyword(s):  
Bragg Reflectors ◽  
Distributed Bragg Reflectors

Characterization of Distributed Bragg Reflectors

2014 ◽  
Vol 50 (6) ◽  
pp. 453-457 ◽  
Author(s):  
Andrew Grieco ◽  
Yeshaiahu Fainman
Keyword(s):  
Bragg Reflectors ◽  
Distributed Bragg Reflectors

Characterization of MBE-grown II–VI semiconductor distributed Bragg reflectors

1999 ◽  
Vol 201-202 ◽  
pp. 1040-1043 ◽  
Author(s):  
F.C. Peiris ◽  
S. Lee ◽  
U. Bindley ◽  
J.K. Furdyna ◽  
A.M. Stuckey ◽  
...  
Keyword(s):  
Bragg Reflectors ◽  
Distributed Bragg Reflectors

Growth and x‐ray characterization of strain compensated GaAs/AlAs distributed Bragg reflectors

1996 ◽  
Vol 68 (6) ◽  
pp. 806-808 ◽  
Author(s):  
A. Mazuelas ◽  
H. Nörenberg ◽  
R. Hey ◽  
H. T. Grahn
Keyword(s):  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
X Ray

scholarly journals MBE Growth and Characterization of a III-V Distributed Bragg Reflectors and InAs Quantum Dots

2012 ◽  
Vol 122 (6) ◽  
pp. 984-987 ◽  
Author(s):  
J.G. Rousset ◽  
T. Słupinski ◽  
T. Jakubczyk ◽  
J. Kobak ◽  
P. Stawicki ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Mbe Growth ◽  
Inas Quantum Dots

Growth and characterization of nitride-based distributed Bragg reflectors

2011 ◽  
Vol 248 (8) ◽  
pp. 1748-1755 ◽  
Author(s):  
Carsten Kruse ◽  
Heiko Dartsch ◽  
Timo Aschenbrenner ◽  
Stephan Figge ◽  
Detlef Hommel
Keyword(s):  
Bragg Reflectors ◽  
Distributed Bragg Reflectors

Characterization of AlxGa1-xN/ AlyGa1-yN Distributed Bragg Reflectors Grown by Plasma Assisted Molecular Beam Epitaxy

2001 ◽  
Vol 693 ◽  
Author(s):  
H. Klausing ◽  
F. Fedler ◽  
T. Rotter ◽  
D. Mistele ◽  
O. Semchinova ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
X Ray Diffraction ◽  
Al Content ◽  
Dispersion Data ◽  
Quarter Wave

AbstractAlxGa1-xN/ AlyGa1-yN Distributed Bragg Reflectors (DBRs) with up to 45 periods have been grown on (0001) sapphire substrates by r.f. plasma-assisted molecular beam epitaxy (PAMBE) with the aid of two Al effusion cells. Several samples were grown with an Al mole fraction varying between 0.38 ≤ x ≤ 1 (0 ≤ y ≤ 0.4) at temperatures of up to 890°C. In all samples, an AlxGa1-xN buffer layer was used to prevent cracking of the quarter wave stack and improving surface morphology by choosing the Al content so that strain energy in the DBR structure would be compensated.X-ray diffraction (XRD) and scanning electron microscopy (SEM) investigations were performed to determine the thickness of the quarter wave layer periods and the Al mole fraction of corresponding AlxGa1-xN single layers.Room-temperature calibrated reflection and transmission (R&T) measurements were performed. Thus stray and self-absorption of the DBRs were extracted from reflectance and transmittance. The thickness of the quarter wave layers was designed such that the measured peak reflectances appeared between 346 nm to 421 nm. The dispersion data, including refractive indices and absorption coefficients, used in the calculation were extracted from R&T measurements done on the above mentioned AlxGa1-xN single layers.

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