Growth and x‐ray characterization of strain compensated GaAs/AlAs distributed Bragg reflectors

1996 ◽  
Vol 68 (6) ◽  
pp. 806-808 ◽  
Author(s):  
A. Mazuelas ◽  
H. Nörenberg ◽  
R. Hey ◽  
H. T. Grahn
2019 ◽  
Vol 126 (21) ◽  
pp. 213109 ◽  
Author(s):  
P. H. Griffin ◽  
M. Frentrup ◽  
T. Zhu ◽  
M. E. Vickers ◽  
R. A. Oliver

1996 ◽  
Vol 449 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
X. Zhang ◽  
R. Lavado ◽  
...  

ABSTRACTWe present the metalorganic chemical vapor deposition growth, n-type and p-type doping and characterization of AlxGa1-xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using AlxGa1-xN high quality films. We report the structural characterization of the AlxGa1-xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 107 cm-2 was estimated in AlxGa1-xN / GaN structures. The realization of AlxGa1-xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.


Author(s):  
A Klein ◽  
M Zorn ◽  
U Zeimer ◽  
R Schneider ◽  
A Oster ◽  
...  

2003 ◽  
Author(s):  
M. B. Vaello ◽  
J. Tito ◽  
Ricardo M. Mallavia ◽  
M. M. Sanchez ◽  
S. Fernandez de Avila ◽  
...  

2014 ◽  
Vol 50 (6) ◽  
pp. 453-457 ◽  
Author(s):  
Andrew Grieco ◽  
Yeshaiahu Fainman

1999 ◽  
Vol 201-202 ◽  
pp. 1040-1043 ◽  
Author(s):  
F.C. Peiris ◽  
S. Lee ◽  
U. Bindley ◽  
J.K. Furdyna ◽  
A.M. Stuckey ◽  
...  

1997 ◽  
Vol 19 (2-4) ◽  
pp. 313-320
Author(s):  
A. Mazuelas ◽  
R. Hey ◽  
B. Jenichen ◽  
H. T. Grahn

2012 ◽  
Vol 122 (6) ◽  
pp. 984-987 ◽  
Author(s):  
J.G. Rousset ◽  
T. Słupinski ◽  
T. Jakubczyk ◽  
J. Kobak ◽  
P. Stawicki ◽  
...  

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