scholarly journals Observation of Competition between Drift Instability and Flute Instability in a Bounded Linear ECR Plasma

2007 ◽  
Vol 2 ◽  
pp. 034-034
Author(s):  
Kunihiro KAMATAKI ◽  
Yoshihiko NAGASHIMA ◽  
Shunjiro SHINOHARA ◽  
Yoshinobu KAWAI ◽  
Sigeru INAGAKI ◽  
...  
Keyword(s):  
Bounded Linear ◽  
Ecr Plasma ◽  
Flute Instability ◽  
Drift Instability

MHD analysis of the current-driven flute instability of a plasma

2002 ◽  
Vol 68 (1) ◽  
pp. 59-73 ◽  
Author(s):  
I. F. SHAIKHISLAMOV
Keyword(s):  
Lower Hybrid ◽  
New Classification ◽  
Clear Cut ◽  
Flute Instability ◽  
Simple Physical Interpretation ◽  
A Cell ◽  
Drift Instability ◽  
First Time ◽  
Comprehensive Study

The lower-hybrid drift instability of a plasma driven by relative ion–electron motion is analyzed in the framework of the modified magnetohydrodynamic equations. The Hall contribution is expressed in terms that offer a simple physical interpretation of the process and allow a comprehensive study of various features and limits of instability. It is shown that in the chosen terms there are clear-cut ranges of magnetosonic drift, lower-hybrid drift, and kinetic versions of instability that have different properties. It is shown for the first time that the instability may have, besides a flute-like structure, a cell-like one as well. On the basis of the performed analysis, a new classification of the phenomenon is offered.

Coexistence of Collisional Drift and Flute Wave Instabilities in Bounded Linear ECR Plasma

2007 ◽  
Vol 76 (5) ◽  
pp. 054501 ◽  
Author(s):  
Kunihiro Kamataki ◽  
Yoshihiko Nagashima ◽  
Shunjiro Shinohara ◽  
Yoshinobu Kawai ◽  
Masatoshi Yagi ◽  
...  
Keyword(s):  
Bounded Linear ◽  
Ecr Plasma ◽  
Wave Instabilities

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering

2014 ◽  
Vol E97.C (5) ◽  
pp. 413-418 ◽  
Author(s):  
Dae-Hee HAN ◽  
Shun-ichiro OHMI ◽  
Tomoyuki SUWA ◽  
Philippe GAUBERT ◽  
Tadahiro OHMI
Keyword(s):  
Surface Roughness ◽  
Gate Insulator ◽  
Electrical Characteristics ◽  
Ecr Plasma ◽  
Plasma Sputtering

Cline’s formula for g-Drazin inverses in a ring

Filomat ◽  
2019 ◽  
Vol 33 (8) ◽  
pp. 2249-2255
Author(s):  
Huanyin Chen ◽  
Marjan Abdolyousefi
Keyword(s):  
Operator Theory ◽  
Spectral Properties ◽  
Associative Ring ◽  
Linear Operators ◽  
Drazin Inverse ◽  
Bounded Linear Operators ◽  
Bounded Linear ◽  
Cline’S Formula

It is well known that for an associative ring R, if ab has g-Drazin inverse then ba has g-Drazin inverse. In this case, (ba)d = b((ab)d)2a. This formula is so-called Cline?s formula for g-Drazin inverse, which plays an elementary role in matrix and operator theory. In this paper, we generalize Cline?s formula to the wider case. In particular, as applications, we obtain new common spectral properties of bounded linear operators.

A note on normal operators

1963 ◽  
Vol 59 (4) ◽  
pp. 727-729 ◽  
Author(s):  
S. J. Bernau ◽  
F. Smithies
Keyword(s):  
Hilbert Space ◽  
Linear Operator ◽  
Adjoint Operator ◽  
Spectral Theorem ◽  
Unitary Operators ◽  
Unitary Space ◽  
Bounded Linear ◽  
Finite Dimensional ◽  
Normal Operators ◽  
Finite Dimensional Case

We recall that a bounded linear operator T in a Hilbert space or finite-dimensional unitary space is said to be normal if T commutes with its adjoint operator T*, i.e. TT* = T*T. Most of the proofs given in the literature for the spectral theorem for normal operators, even in the finite-dimensional case, appeal to the corresponding results for Hermitian or unitary operators.

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