scholarly journals A 3.6 GHz Doherty Power Amplifier with a 40 dBm Saturated Output Power using GaN on SiC HEMT Devices

2000 ◽  
Author(s):  
Bryant Baker
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Saturated Output Power ◽  
Doherty Power Amplifier

scholarly journals A Power Amplifier with Large High-Efficiency Range for 5G Communication

Sensors ◽  
2020 ◽  
Vol 20 (19) ◽  
pp. 5581
Author(s):  
Zhiwei Zhang ◽  
Zhiqun Cheng ◽  
Guohua Liu
Keyword(s):  
Output Power ◽  
Design Process ◽  
Power Amplifier ◽  
High Efficiency ◽  
New Method ◽  
Saturated Output Power ◽  
Doherty Power Amplifier ◽  
5G Communication

This paper presents a new method to design a Doherty power amplifier (DPA) with a large, high-efficiency range for 5G communication. This is through analyzing the drain-to-source capacitance (CDS) of DPAs, and adopting appropriate impedance of the peak device. A closed design process is proposed, to design the extended efficiency range DPA based on derived theories. For validation, a DPA with large efficiency range was designed and fabricated by using two equal devices. The measured results showed that the saturated output power was between 43.4 dBm and 43.7 dBm in the target band. Around 70% saturated drain efficiency is obtained with a gain of greater than 11 dB. Moreover, the obtained drain efficiency is larger than 50% at the 10 dB power back-off, when operating at 3.5 GHz. These superior performances illustrate that the implemented DPA can be applied well in 5G communication.

A Novel Dual-Band Concurrent Asymmetric Doherty Power Amplifier for Wireless Communications

2019 ◽  
Vol 28 (14) ◽  
pp. 1950235 ◽  
Author(s):  
Shaban Rezaei Borjlu ◽  
Massoud Dousti
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Mobile Communications ◽  
Bandpass Filter ◽  
Dual Band ◽  
Power Gain ◽  
Average Output ◽  
Measurement Results ◽  
Saturated Output Power ◽  
Doherty Power Amplifier

In this paper, a different dual-band asymmetric Doherty power amplifier (ADPA) with a novel dual-band bandpass filter (DBBPF) with quad-section stepped impedance resonators (SIRs) is presented. This specific DBBPF rejects the annoying frequencies of the second and third harmonics in the dual-band and contributes considerably to performance improvement of ADPA. This structure is confirmed with the design, simulation, implementation and testing of a 10 W GaN-based ADPA for global system for mobile communications (GSM) and worldwide interoperability for microwave access (WiMAX) applications at 1.84 and 3.5[Formula: see text]GHz, respectively. In the measurement results, the ADPA defines a drain efficiency (DE) of 63.7% with an output power of 35[Formula: see text]dBm and power gain is 14.2[Formula: see text]dB, and a DE of 47.5% with an output power of 34.5[Formula: see text]dBm and power gain is 10.4[Formula: see text]dB at the 9[Formula: see text]dB output power back-off (OBO) from the saturated output power in the two frequency bands. Linearity effects, applying 10[Formula: see text]MHz 16 QAM signal and a 5[Formula: see text]MHz WiMAX signal, display an adjacent channel leakage ratio of [Formula: see text] and [Formula: see text][Formula: see text]dBc with the average output power of 36.8/36[Formula: see text]dBm at 1.84/3.5[Formula: see text]GHz, respectively.

Evaluation of GaN technology in Doherty power amplifier architectures

2010 ◽  
Vol 2 (1) ◽  
pp. 75-84 ◽  
Author(s):  
Paolo Colantonio ◽  
Franco Giannini ◽  
Rocco Giofrè ◽  
Luca Piazzon
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Electron Mobility Transistor ◽  
Design Guidelines ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Single Output ◽  
Saturated Output Power ◽  
Doherty Power Amplifier

The aim of the present paper is to highlight the possible benefits coming from the use of the GaN high electron-mobility transistor (HEMT) technology in the Doherty power amplifier (DPA) architecture. In particular, the attention is focused on the capabilities and the relevant drawbacks of a GaN HEMT technology when designing DPAs. A deep discussion of the DPA's design guidelines is also presented through the realization of three prototypes implementing different design solutions and working at 2.14 GHz. The first example is a tuned load DPA (TL-DPA), which show an average drain efficiency of 40.7% with 3 W of saturated output power in the obtained 6 dB of output back-off. The second DPA was designed implementing a class F harmonic termination for the main device, which allows an improvement of roughly 15% in output power and efficiency behavior with respect to the TL-DPA. The last DPA was realized implementing a single output matching network for both main and auxiliary devices, which allows a relevant reduction in the size of the resulting DPA, without downgrading the overall performances.

scholarly journals Design of a Wideband Doherty Power Amplifier with High Efficiency for 5G Application

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 873
Author(s):  
Abbas Nasri ◽  
Motahhareh Estebsari ◽  
Siroos Toofan ◽  
Anna Piacibello ◽  
Marco Pirola ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Efficiency ◽  
Matching Network ◽  
Class Ab ◽  
Measurement Results ◽  
Saturated Output Power ◽  
Doherty Power Amplifier ◽  
Good Trade ◽  
The Impact

This paper discusses the design of a wideband class AB-C Doherty power amplifier suitable for 5G applications. Theoretical analysis of the output matching network is presented, focusing on the impact of the non-ideally infinite output impedance of the auxiliary amplifier in back off, due to the device’s parasitic elements. By properly accounting for this effect, the designed output matching network was able to follow the desired impedance trajectories across the 2.8 GHz to 3.6 GHz range (fractional bandwidth = 25%), with a good trade-off between efficiency and bandwidth. The Doherty power amplifier was designed with two 10 W packaged GaN HEMTs. The measurement results showed that it provided 43 dBm to 44.2 dBm saturated output power and 8 dB to 13.5 dB linear power gain over the entire band. The achieved drain efficiency was between 62% and 76.5% at saturation and between 44% and 56% at 6 dB of output power back-off.

A broadband 23.1 ∼ 27.2 GHz doherty power amplifier with peak output power of 24.3 dBm

Circuit World ◽  
2019 ◽  
Vol 46 (1) ◽  
pp. 1-5
Author(s):  
Yanfeng Fang ◽  
Yijiang Zhang
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Input Power ◽  
Content Type ◽  
Fully Integrated ◽  
Power Added Efficiency ◽  
Peak Output Power ◽  
Saturated Output Power ◽  
Direct Input ◽  
Matching Techniques

Purpose This paper aims to implement a new high output power fully integrated 23.1 to 27.2 GHz gallium arsenide heterojunction bipolar transistor power amplifier (PA) to meet the stringent linearity requirements of LTE systems. Design/methodology/approach The direct input power dividing technique is used on the chip. Broadband input and output matching techniques are used for broadband Doherty operation. Findings The PA achieves a small-signal gain of 22.8 dB at 25.1 GHz and a saturated output power of 24.3 dBm at 25.1 GHz with a maximum power added efficiency of 31.7%. The PA occupies 1.56 mm2 (including pads) and consumes a maximum current of 79.91 mA from a 9 V supply. Originality/value In this paper, the author proposed a novel direct input dividing technique with broadband matching circuits using a low Q output matching technique, and demonstrated a fully-integrated Doherty PA across frequencies of 23.1∼27.2 GHz for long term evolution-license auxiliary access (LTE-LAA) handset applications.

A 4.2-to-5.4 GHz stacked GaAs HBT power amplifier for C-band applications

Circuit World ◽  
2020 ◽  
Vol 46 (4) ◽  
pp. 243-248
Author(s):  
Min Liu ◽  
Panpan Xu ◽  
Jincan Zhang ◽  
Bo Liu ◽  
Liwen Zhang
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
High Efficiency ◽  
Common Source ◽  
Power Performance ◽  
Matching Network ◽  
Content Type ◽  
Power Added Efficiency ◽  
Saturated Output Power

Purpose Power amplifiers (PAs) play an important role in wireless communications because they dominate system performance. High-linearity broadband PAs are of great value for potential use in multi-band system implementation. The purpose of this paper is to present a cascode power amplifier architecture to achieve high power and high efficiency requirements for 4.2∼5.4 GHz applications. Design/methodology/approach A common emitter (CE) configuration with a stacked common base configuration of heterojunction bipolar transistor (HBT) is used to achieve high power. T-type matching network is used as input matching network. To increase the bandwidth, the output matching networks are implemented using the two L-networks. Findings By using the proposed method, the stacked PA demonstrates a maximum saturated output power of 26.2 dBm, a compact chip size of 1.17 × 0.59 mm2 and a maximum power-added efficiency of 46.3 per cent. The PA shows a wideband small signal gain with less than 3 dB variation over working frequency. The saturated output power of the proposed PA is higher than 25 dBm between 4.2 and 5.4 GHz. Originality/value The technology adopted for the design of the 4.2-to-5.4 GHz stacked PA is the 2-µm gallium arsenide HBT process. Based on the proposed method, a better power performance of 3 dB improvement can be achieved as compared with the conventional CE or common-source amplifier because of high output stacking impedance.

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