Non-Boolean Computing with Spintronic Devices

2018 ◽  
Vol 12 (1) ◽  
pp. 1-123 ◽  
Author(s):  
Roxy Kawsher A. ◽  
Sanjukta Bhanja
Keyword(s):  
Spintronic Devices

Non-Boolean Computing with Spintronic Devices

2018 ◽  
Author(s):  
Roxy Kawsher A. ◽  
Sanjukta Bhanja
Keyword(s):  
Spintronic Devices

Polariton Devices

2017 ◽  
Author(s):  
Alexey V. Kavokin ◽  
Jeremy J. Baumberg ◽  
Guillaume Malpuech ◽  
Fabrice P. Laussy
Keyword(s):  
Semiconductor Devices ◽  
Logic Gates ◽  
Light Sources ◽  
Coherent Light ◽  
Final State ◽  
Spintronic Devices ◽  
Exciton Polaritons ◽  
Terahertz Lasers ◽  
Coherence Lengths ◽  
Stimulation Of

Polariton devices offer multiple advantages compared to conventional semiconductor devices. The bosonic nature of exciton polaritons offers opportunity of realisation of polariton lasers: coherent light sources based on bosonic condensates of polaritons. The final state stimulation of any transition feeding a polariton condensate has been used in many proposals such as for terahertz lasers based on polariton lasers. Furthermore, large coherence lengths of exciton-polaritons in microcavities open the way to realisation of polariton transport devices including transistors and logic gates. Being bosonic spin carriers, exciton-polaritons may be used in spintronic devices and polarisation switches. This chapter offers an overview on the existing proposals for polariton devices.

scholarly journals Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Ruyi Chen ◽  
Qirui Cui ◽  
Liyang Liao ◽  
Yingmei Zhu ◽  
Ruiqi Zhang ◽  
...  
Keyword(s):  
Domain Wall ◽  
Tunnel Junctions ◽  
Low Power Consumption ◽  
Stray Field ◽  
Magnetic Memory ◽  
Spin Orbit ◽  
Theoretic Analysis ◽  
Spintronic Devices ◽  
Deterministic Switching ◽  
Moriya Interaction

AbstractPerpendicularly magnetized synthetic antiferromagnets (SAF), possessing low net magnetization and high thermal stability as well as easy reading and writing characteristics, have been intensively explored to replace the ferromagnetic free layers of magnetic tunnel junctions as the kernel of spintronic devices. So far, utilizing spin-orbit torque (SOT) to realize deterministic switching of perpendicular SAF have been reported while a large external magnetic field is typically needed to break the symmetry, making it impractical for applications. Here, combining theoretic analysis and experimental results, we report that the effective modulation of Dzyaloshinskii-Moriya interaction by the interfacial crystallinity between ferromagnets and adjacent heavy metals plays an important role in domain wall configurations. By adjusting the domain wall configuration between Bloch type and Néel type, we successfully demonstrate the field-free SOT-induced magnetization switching in [Co/Pd]/Ru/[Co/Pd] SAF devices constructed with a simple wedged structure. Our work provides a practical route for utilization of perpendicularly SAF in SOT devices and paves the way for magnetic memory devices with high density, low stray field, and low power consumption.

scholarly journals Synthesis and characterization of [7]triangulene

Nanoscale ◽  
2021 ◽  
Author(s):  
Shantanu Mishra ◽  
Kun Xu ◽  
Kristjan Eimre ◽  
Hartmut Komber ◽  
Ji Ma ◽  
...  
Keyword(s):  
High Spin ◽  
Ground States ◽  
Synthesis And Characterization ◽  
Spintronic Devices

Triangulene and its π-extended homologues constitute non-Kekulé polyradical frameworks with high-spin ground states, and are anticipated to be key components of organic spintronic devices. We report a combined in-solution and...

scholarly journals Manipulation of hot carrier cooling dynamics in two-dimensional Dion–Jacobson hybrid perovskites via Rashba band splitting

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jun Yin ◽  
Rounak Naphade ◽  
Partha Maity ◽  
Luis Gutiérrez-Arzaluz ◽  
Dhaifallah Almalawi ◽  
...  
Keyword(s):  
Transient Absorption ◽  
Phonon Scattering ◽  
Transient Absorption Spectroscopy ◽  
Band Model ◽  
Two Dimensional ◽  
Spintronic Devices ◽  
Hot Carrier ◽  
Band Splitting ◽  
Perovskite Materials ◽  
Spin Polarized

AbstractHot-carrier cooling processes of perovskite materials are typically described by a single parabolic band model that includes the effects of carrier-phonon scattering, hot phonon bottleneck, and Auger heating. However, little is known (if anything) about the cooling processes in which the spin-degenerate parabolic band splits into two spin-polarized bands, i.e., the Rashba band splitting effect. Here, we investigated the hot-carrier cooling processes for two slightly different compositions of two-dimensional Dion–Jacobson hybrid perovskites, namely, (3AMP)PbI4 and (4AMP)PbI4 (3AMP = 3-(aminomethyl)piperidinium; 4AMP = 4-(aminomethyl)piperidinium), using a combination of ultrafast transient absorption spectroscopy and first-principles calculations. In (4AMP)PbI4, upon Rashba band splitting, the spin-dependent scattering of hot electrons is responsible for accelerating hot-carrier cooling at longer delays. Importantly, the hot-carrier cooling of (4AMP)PbI4 can be extended by manipulating the spin state of the hot carriers. Our findings suggest a new approach for prolonging hot-carrier cooling in hybrid perovskites, which is conducive to further improving the performance of hot-carrier-based optoelectronic and spintronic devices.

scholarly journals Spin-state-dependent electrical conductivity in single-walled carbon nanotubes encapsulating spin-crossover molecules

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Julia Villalva ◽  
Aysegul Develioglu ◽  
Nicolas Montenegro-Pohlhammer ◽  
Rocío Sánchez-de-Armas ◽  
Arturo Gamonal ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Spin State ◽  
Spin Crossover ◽  
Single Walled Carbon Nanotubes ◽  
Guest Molecules ◽  
Spintronic Devices ◽  
Single Walled Carbon ◽  
State Dependent ◽  
Lack Of Control ◽  
Walled Carbon Nanotubes

AbstractSpin crossover (SCO) molecules are promising nanoscale magnetic switches due to their ability to modify their spin state under several stimuli. However, SCO systems face several bottlenecks when downscaling into nanoscale spintronic devices: their instability at the nanoscale, their insulating character and the lack of control when positioning nanocrystals in nanodevices. Here we show the encapsulation of robust Fe-based SCO molecules within the 1D cavities of single-walled carbon nanotubes (SWCNT). We find that the SCO mechanism endures encapsulation and positioning of individual heterostructures in nanoscale transistors. The SCO switch in the guest molecules triggers a large conductance bistability through the host SWCNT. Moreover, the SCO transition shifts to higher temperatures and displays hysteresis cycles, and thus memory effect, not present in crystalline samples. Our results demonstrate how encapsulation in SWCNTs provides the backbone for the readout and positioning of SCO molecules into nanodevices, and can also help to tune their magnetic properties at the nanoscale.

Materials, Devices and Spin Transfer Torque in Antiferromagnetic Spintronics: A Concise Review

SPIN ◽  
2017 ◽  
Vol 07 (03) ◽  
pp. 1740014 ◽  
Author(s):  
Cormac Ó Coileáin ◽  
Han Chun Wu
Keyword(s):  
Magnetic Fields ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Tetragonal Structure ◽  
Next Generation ◽  
Tunnel Magnetoresistance ◽  
Spintronic Devices ◽  
Concise Review ◽  
Plane Anisotropy ◽  
Magnetic States

From historical obscurity, antiferromagnets are recently enjoying revived interest, as antiferromagnetic (AFM) materials may allow the continued reduction in size of spintronic devices. They have the benefit of being insensitive to parasitic external magnetic fields, while displaying high read/write speeds, and thus poised to become an integral part of the next generation of logical devices and memory. They are currently employed to preserve the magnetoresistive qualities of some ferromagnetic based giant or tunnel magnetoresistance systems. However, the question remains how the magnetic states of an antiferromagnet can be efficiently manipulated and detected. Here, we reflect on AFM materials for their use in spintronics, in particular, newly recognized antiferromagnet Mn2Au with its in-plane anisotropy and tetragonal structure and high Néel temperature. These attributes make it one of the most promising candidates for AFM spintronics thus far with the possibility of architectures freed from the need for ferromagnetic (FM) elements. Here, we discuss its potential for use in ferromagnet-free spintronic devices.

Nonvolatile electrical control of 2D Cr2Ge2Te6 and intrinsic half metallicity in multiferroic hetero-structures

Nanoscale ◽  
2021 ◽  
Author(s):  
Asif Ilyas ◽  
Shuling Xiang ◽  
Miaogen Chen ◽  
Muhammad Yar Khan ◽  
Hua Bai ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Two Dimensional ◽  
Half Metallicity ◽  
Spintronic Devices ◽  
Electrical Control

The electrical control of two-dimensional (2D) van der Waals ferromagnets is a step forward for the realization of spintronic devices.

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