Superconducting thin Films of (RE)Ba2Cu3(Ag)O7x Prepared by Pulsed Laser Ablation

1987 ◽  
Vol 99 ◽  
Author(s):  
L. Lynds ◽  
B. R. Weinberger ◽  
G. G. Peterson ◽  
H. A. Krasinski
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Superconducting Thin Films ◽  
Superconducting Transition ◽  
Scanning Auger Microscopy ◽  
Potential Benefits ◽  
Auger Microscopy

ABSTRACTThin films of (RE)-Ba-Cu-O perovkites containing silver were prepared by pulsed Nd:YAG (wavelength 1064 nm) laser ablation. Presence of the 1:2:3 phase was verified by scanning Auger microscopy. Onset of the d.c. resistive superconducting transition of 85 K was observed. Films with and without silver were compared and the potential benefits of silver inclusion are discussed.

NbN superconducting thin films grown by pulsed laser ablation

1996 ◽  
Vol 106 ◽  
pp. 361-364 ◽  
Author(s):  
V. Boffa ◽  
U. Gambardella ◽  
V. Marotta ◽  
A. Morone ◽  
F. Murtas ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Superconducting Thin Films

High temperature superconducting thin films: The physics of pulsed laser ablation

1989 ◽  
Vol 159 (1-2) ◽  
pp. 61-69 ◽  
Author(s):  
L. Lynds ◽  
B.R. Weinberger ◽  
D.M. Potrepka ◽  
G.G. Peterson ◽  
M.P. Lindsay
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Superconducting Thin Films ◽  
High Temperature Superconducting

Growth and Superconducting Properties of Sm1Ba2Cu3O7-δ Thin Films

1999 ◽  
Vol 13 (09n10) ◽  
pp. 1055-1059 ◽  
Author(s):  
A. Di Trolio ◽  
A. Morone ◽  
S. Orlando ◽  
U. Gambardella
Keyword(s):  
Thin Films ◽  
Critical Temperature ◽  
Laser Ablation ◽  
Growth Parameters ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Superconducting Thin Films ◽  
Superconducting Properties ◽  
Deposition Parameters ◽  
Degree Of Orientation

We successfully used the pulsed laser ablation and deposition to prepare superconducting thin films of SmBaCuO under different growth parameters. The films were grown on both MgO (100) and SrTiO 3 (100) substrates. The best samples showed a good degree of orientation, having the θ-scan around the 005 reflection an FWHM ≈ 0.2°. We report the critical temperature as a function of the deposition parameters, comparing the results between the two substrates. We also estimate the critical current density at 60 K from the magnetization curve.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

ZnS thin films grown on Si(100) by XeCl pulsed laser ablation

2001 ◽  
Vol 177 (1-2) ◽  
pp. 73-77 ◽  
Author(s):  
K.T Hillie ◽  
C Curren ◽  
H.C Swart
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation
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