Adhesion of Copper to Polytetrafluoroethylene

1989 ◽  
Vol 153 ◽  
Author(s):  
Yong-Kil Kim ◽  
Chin-An Chang ◽  
A.G. Schrott ◽  
J. Andreshak ◽  
M. Cali
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Peel Test ◽  
Peel Strength ◽  
Interface Morphology ◽  
Ion Beam Sputtering ◽  
Polymer Substrates ◽  
X Ray ◽  
Beam Sputtering ◽  
Scanning Electron

AbstractAn enhancement of the adhesion between copper and polytetrafluoroethylene (PTFE) has been studied. Thin-films of copper were electron-beam deposited on the surface of the polymer substrates. Peel test measurements showed that, without any treatment of the substrates, the adhesion was poor with a peel strength of 1-2 g/mm. A pronounced enhancement of the adhesion has been obtained when the fluorocarbon substrates were treated by either an ultraviolet (UV) irradiation, an ion-beam presputtering prior to the metal deposition, or heat treatments after the deposition. Among the treatments employed, the ion-beam sputtering was the most effective in improving the adhesion. The roles of the treatments and possible reasons for the enhanced adhesion are discussed in conjunction with the studies of interface morphology and chemistry using Scanning Electron Microscopy, Rutherford Backscattering Spectroscopy, and X-ray Photoelectron Spectroscopy.

Adhesion of Copper to Polytetrafluoroethylene

1989 ◽  
Vol 154 ◽  
Author(s):  
Yong-Kil Kim ◽  
Chin-An Chang ◽  
A. G. Schrott ◽  
J. Andreshak ◽  
M. Cali
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Peel Test ◽  
Peel Strength ◽  
Interface Morphology ◽  
Ion Beam Sputtering ◽  
Polymer Substrates ◽  
X Ray ◽  
Beam Sputtering ◽  
Scanning Electron

AbstractAn enhancement of the adhesion between copper and polytetrafluoroethylene (PTFE) has been studied. Thin-films of copper were electron-beam deposited on the surface of the polymer substrates. Peel test measurements showed that, without any treatment of the substrates, the adhesion was poor with a peel strength of 1–2 g/mm. A pronounced enhancement of the adhesion has been obtained when the fluorocarbon substrates were treated by either an ultraviolet (UV) irradiation, an ion-beam presputtering prior to the metal deposition, or heat treatments after the deposition. Among the treatments employed, the ion-beam sputtering was the most effective in improving the adhesion. The roles of the treatments and possible reasons for the enhanced adhesion are discussed in conjunction with the studies of interface morphology and chemistry using Scanning Electron Microscopy, Rutherford Backscattering Spectroscopy, and X-ray Photoelectron Spectroscopy.

Interface Reactions and Electrical Properties of Ta/4H-SiC Contacts

2007 ◽  
Vol 556-557 ◽  
pp. 713-716 ◽  
Author(s):  
Yu Cao ◽  
S. Alfonso Pérez-García ◽  
Lars Nyborg
Keyword(s):  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
High Vacuum ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Interface Reactions ◽  
Beam Sputtering ◽  
Sic Wafer

This study deals with the interfacial reactions and electrical properties of Ta/4H-SiC contacts. Tantalum thin films (~100 nm) were deposited onto SiC wafer at room temperature by argon ion beam sputtering. The samples were then heated in high vacuum at 650°C, 800°C or 950°C for 30 min. X-ray photoelectron spectroscopy (XPS), glancing angle X-ray diffraction (XRD), Auger electron spectroscopy (AES) and current-voltage (I-V) technique were used for characterising the samples. Ohmic contact is formed in the studied samples after annealing at or above 800°C even though considerable amount of metallic Ta still exists. The reaction zone possesses a layered structure of Ta2C/Ta2C+Ta5Si3/SiC. High enough temperature is needed to provide for sufficient interface change to tailor the contact properties.

Ion Beam Sputtering and Properties of Superconducting YBaCuO thin Films

1987 ◽  
Vol 99 ◽  
Author(s):  
D. Pavona ◽  
H. Baer ◽  
H. Berger ◽  
V. GasParov ◽  
M. Schmidt ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Thermal Treatments ◽  
Spectroscopy Data ◽  
Ion Beam Sputtering ◽  
X Ray ◽  
Single Target ◽  
Beam Sputtering

ABSTRACTWe describe single-target ion beam sputtering of superconducting YBaCuO thin films mainly onto R-sapphire and (100) SrTiO3 substrates. We discuss different thermal treatments and consequent X-ray and resistivity results and conclude with X-ray photoelectron spectroscopy data which indicate formation of hydroxydes on the surface of films exposed to atmosphere.

scholarly journals Особенности фазообразования и электронного строения в пленочных композитах Al-=SUB=-1-x-=/SUB=-Si-=SUB=-x-=/SUB=- при магнетронном и ионно-лучевом напылении

2018 ◽  
Vol 60 (5) ◽  
pp. 1005
Author(s):  
В.А. Терехов ◽  
Д.С. Усольцева ◽  
О.В. Сербин ◽  
И.Е. Занин ◽  
Т.В. Куликова ◽  
...  
Keyword(s):  
Solid Solution ◽  
Silicon Nanocrystals ◽  
Ion Beam ◽  
Composite Films ◽  
Photon Radiation ◽  
Ion Beam Sputtering ◽  
Composite Target ◽  
X Ray ◽  
Beam Sputtering ◽  
Cubic System

AbstractThe peculiarities of the phase composition and electronic structure of aluminum–silicon composite films near the Al_0.75Si_0.25 composition obtained by the magnetron and ion-beam sputtering methods on a Si(100) silicon substrate are studied using the X-ray diffraction techniques and ultrasoft X-ray emission spectroscopy. In addition to silicon nanocrystals of about 25 nm in size, an ordered solid solution corresponding to the previously unknown Al_3Si phase is formed in magnetron sputtering on a polycrystalline Al matrix. Films obtained by ion-beam sputtering of the composite target are found to be monophasic and contained only one phase of an ordered solid solution of aluminum silicide Al_3Si of the Pm3m cubic system with the primitive cell parameter a = 4.085 Å. However, subsequent pulsed photon annealing of the composite with different radiation doses from 145 to 216 J/cm^2 gives rise to the partial decomposition of the Al_3Si phase with the formation of free metallic aluminum and silicon nanocrystals with sizes in the range from 50 to 100 nm, depending on the pulsed photon radiation dose.

X-ray scattering study of interfacial roughness correlation in Mo/Si multilayers fabricated by ion beam sputtering

2000 ◽  
Vol 87 (10) ◽  
pp. 7255-7260 ◽  
Author(s):  
A. Ulyanenkov ◽  
R. Matsuo ◽  
K. Omote ◽  
K. Inaba ◽  
J. Harada ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Interfacial Roughness ◽  
X Ray ◽  
X Ray Scattering ◽  
Beam Sputtering ◽  
Scattering Study ◽  
Ray Scattering

Relationship Between Microstructure and Hardness of ZrN/TiN Multi-Layers with Various Bilayer Thicknesses

2010 ◽  
Vol 63 ◽  
pp. 392-395
Author(s):  
Yoshifumi Aoi ◽  
Satoru Furuhata ◽  
Hiromi Nakano
Keyword(s):  
Mechanical Property ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Microstructure And Mechanical Property

ZrN/TiN multi-layers were synthesized by ion beam sputtering technique. Microstructure and mechanical property of the ZrN/TiN multi-layers were characterized and the relationships between microstructure and hardness of the ZrN/TiN multi-layers with various bilayer thicknesses and thickness ratios were investigated. The microstructure of multi-layers have been investigated using transmission electron microscope (TEM) and X-ray diffraction (XRD).

MODULATION WAVELENGTH DEPENDENCE OF THE INTERDIFFUSION IN AMORPHOUS Si/Ge MULTILAYER FILMS

1985 ◽  
Vol 56 ◽  
Author(s):  
S.M. PROKES ◽  
F. SPAEPEN
Keyword(s):  
Ion Beam ◽  
Wavelength Dependence ◽  
Dangling Bond ◽  
Ion Beam Sputtering ◽  
X Ray ◽  
Beam Sputtering ◽  
Amorphous Si ◽  
Effect Of Copper ◽  
Oxygen Impurities ◽  
Modulation Wavelength

AbstractCompositionally modulated amorphous Si/Ge thin films with repeat lengths (wavelengths) between 4.8 nm and 5.83 nm have been prepared using ion beam sputtering. The interdiffusion coefficient was determined from the decrease in the (000) x-ray satellite intensities with annealing, and was found to be relatively large, so that it could easily be measured without crystallization occurring. The effect of copper and oxygen impurities was found to be negligible. The dependence of the interdiffusivity on the modulation wavelength is similar to that of an ordering system. The temperature and wavelength dependence in the range T = 550-630 K is described by Dλ = 1.47×10−10 m.s−1 exp(-l.6 eV/kT)(l-21.8/λ2(nm)). It is suggested that diffusion is governed by the breaking of one bond near a pre-existing dangling bond.

scholarly journals Study of XUV beam splitter flatness for use on a Michelson interferometer

2004 ◽  
Vol 22 (3) ◽  
pp. 279-284 ◽  
Author(s):  
ANNE-SOPHIE MORLENS ◽  
PHILIPPE ZEITOUN ◽  
LAURENT VANBOSTAL ◽  
PASCAL MERCERE ◽  
GRÉGORY FAIVRE ◽  
...  
Keyword(s):  
Beam Splitter ◽  
Ion Beam ◽  
Michelson Interferometer ◽  
Fourier Transform Spectrometer ◽  
Ion Beam Sputtering ◽  
X Ray ◽  
Interference Fringes ◽  
Beam Sputtering ◽  
20 Nm ◽  
Better Than

A XUV Michelson interferometer has been developed by LIXAM/CEA/LCFIO and has been tested as a Fourier-transform spectrometer for measurement of X-ray laser line shape. The observed strong deformation of the interference fringes limited the interest of such an interferometer for plasma probing. Because the fringe deformation was coming from a distortion of the beam splitter (5 × 5 mm2open aperture, about 150 nm thick), several parameters of the multilayer deposition used for the beam splitter fabrication have been recently optimized. The flatness has been improved from 80 nm rms obtained by using the ion beam sputtering technique, to 20 nm rms by using the magnetron sputtering technique. Over 3 × 3 mm2, the beam splitter has a flatness better than 4 nm rms.

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