Residual Donors in P-SiC Films

1987 ◽  
Vol 97 ◽  
Author(s):  
W. E. Carlos ◽  
W. J. Moorea ◽  
P. G. Siebenmann ◽  
J. A. Freitas ◽  
R. Kaplan ◽  
...  

ABSTRACTElectron Spin Resonance (ESR), temperature dependent Hall effect measurements and photoluminesence (PL) are used to examine the assumption that the residual donor in β-SiC films is nitrogen. At low temperatures the ESR has a three line isotropic spectrum which is characteristic of a central hyperfine interaction with nitrogen. The temperature dependence of the intensity of the nitrogen ESR signal correlates with the concentration of un-ionized donors measured by the Hall effect. Donor-Acceptor pair PL spectra are used to establish that the binding energy of the dominant donor in the films is the same as the nitrogen donor observed in Lely-grown samples. Neither PL nor ESR provide any evidence for the presence of a shallower donor.

1995 ◽  
Vol 378 ◽  
Author(s):  
B. K. Meyer ◽  
D. Volm ◽  
C. Wetzel ◽  
L. Eckey ◽  
J.-Ch. Holst ◽  
...  

AbstractFree and bound exciton luminescences as well as donor-acceptor pair recombination of GaN epitaxial layers on 6H-SiC and sapphire substrates were investigated using time integrated and time resolved photoluminescence measurements at low temperatures. Lifetimes are determined for the donor bound exciton at 3.4722eV and for two acceptor bound excitons with energies of 3.4672eV and 3.459eV. Luminescences between 3.29eV and 3.37eV are identified as due to excitons deeply bound to centers located near the substrate-epilayer interface.


1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.


Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.


1999 ◽  
Vol 75 (9) ◽  
pp. 1243-1245 ◽  
Author(s):  
I. Kuskovsky ◽  
D. Li ◽  
G. F. Neumark ◽  
V. N. Bondarev ◽  
P. V. Pikhitsa

1971 ◽  
Vol 24 (9) ◽  
pp. 1797 ◽  
Author(s):  
RJ McDonald ◽  
BK Selinger

Exciplexes may be formed by exciting either partner of a given electron donor-acceptor pair. As the formation of such exciplexes is reversible, dissociation may lead to excitation energy transfer. ��� The temperature dependence of fluorescence excitation spectra has proved to be a powerful tool for exploring these systems.


2018 ◽  
Vol 1124 ◽  
pp. 041023
Author(s):  
N A Talnishnikh ◽  
E I Shabunina ◽  
N M Shmidt ◽  
A E Chernyakov ◽  
D S Arteev ◽  
...  

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