Chemical Vapor Deposited Boron Carbide: Growth by a Vapor-Liquidsolid Process

1987 ◽  
Vol 97 ◽  
Author(s):  
Ian D. R. Mackinnon ◽  
Katherine L. Smith
Keyword(s):  
Vapor Deposition ◽  
Low Temperatures ◽  
Growth Process ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Chemical Vapor Deposited ◽  
Analytical Electron ◽  
Analytical Electron Microscope ◽  
Oriented Parallel

ABSTRACTDetailed analytical electron microscope (AEM) studies of yellow whiskers produced by chemical vapor deposition (CVD)1 show that two basic types of whiskers are produced at low temperatures (between 1200°C and 1400°C) and low boron to carbon gas ratios. Both whisker types show planar microstructures such as twin planes and stacking faults oriented parallel to, or at a rhombohedral angle to, the growth direction. For both whisker types, the presence of droplet-like terminations containing both Si and Ni indicate that the growth process during CVD is via a vapor-liquid-solid (VLS) mechanism.

Microstructure observations of silicon carbide nanorods

2000 ◽  
Vol 15 (9) ◽  
pp. 2020-2026 ◽  
Author(s):  
H. Y. Peng ◽  
X. T. Zhou ◽  
H. L. Lai ◽  
N. Wang ◽  
S. T. Lee
Keyword(s):  
Vapor Deposition ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Growth Direction ◽  
Planar Defects ◽  
Resolution Electron ◽  
Short Nanorods ◽  
Hot Filament ◽  
Nanorod Growth

The microstructures of β-SiC nanorods synthesized by hot-filament chemical vapor deposition were studied in detail by high-resolution electron microscopy. Two distinct types of nanorods were identified. The longer nanorods (lengths > 0.1 mm) contained globules at their tips and a relatively low density of stacking faults perpendicular to their [111] growth direction. It was also observed that SiC nanorods that grew along [100] direction contained no planar defects. Meanwhile, Ni was found to be an effective catalyst for SiC nanorod growth. The short nanorods (lengths < 50 nm), which contained no globules at their ends, can grow along [111], [100], or [112] direction. The growth of these nanorods was interpreted by a two-dimensional vapor–solid mechanism.

scholarly journals Microstructure Characterization of Defects in Cubic Silicon Carbide Using Transmission Electron Microscopy

2013 ◽  
Vol 19 (S5) ◽  
pp. 119-122
Author(s):  
Bralee Chayasombat ◽  
Yusuke Kimata ◽  
Tomoharu Tokunaga ◽  
Kotaro Kuroda ◽  
Katsuhiro Sasaki
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Vapor Deposition ◽  
Displacement Vector ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Transmission Electron ◽  
Cubic Silicon Carbide

AbstractMicrostructures of 3C–SiC grown by chemical vapor deposition (CVD) technique on undulant silicon substrate and a further developed technique called switch-back epitaxy (SBE) were studied using transmission electron microscopy (TEM). In case of the CVD sample, the density of the stacking faults was found to be significantly decreasing along growth direction. Sites of collision of stacking faults were observed using high-resolution transmission electron microscopy. Some of the stacking faults were observed to have disappeared after colliding into each other. The stacking faults were identified to be on the same type of plane and had the same type of displacement vector not only in CVD and SBE but also in the epitaxial layer on the SBE SiC samples.

Structural Study of the Innovative 3C-SiC/Si/3C-SiC/Si Heterostructure for Electro-Mechanical Applications

2016 ◽  
Vol 858 ◽  
pp. 143-146 ◽  
Author(s):  
Rami Khazaka ◽  
Marc Portail ◽  
Philippe Vennéguès ◽  
Daniel Alquier ◽  
Jean François Michaud
Keyword(s):  
Chemical Vapor Deposition ◽  
Structural Properties ◽  
Structural Study ◽  
Vapor Deposition ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Subsequent Growth ◽  
Complete Layer ◽  
The Impact

In this work, we report the growth of a 3C-SiC layer oriented along the [111] direction on Si (110)/3C-SiC(001)/Si (001) heterostructure. The growth of the complete layer stack occurs in one deposition run in a Chemical Vapor Deposition (CVD) reactor on on-axis Si (001) substrate. The structural properties of the 3CSiC(111) layer are discussed and the impact of the first 3C-SiC layer on the subsequent growth is highlighted. The 3C-SiC(111) top layer shows two domains rotated by 90o around the growth direction directly linked to the domains rotation in the Si epilayer underneath it. Furthermore, μtwins and stacking faults are present on the inclined (111) planes in the 3C-SiC epilayer.

Crystalline perfection of chemical vapor deposited diamond films

1990 ◽  
Vol 5 (8) ◽  
pp. 1591-1594 ◽  
Author(s):  
A. V. Hetherington ◽  
C. J. H. Wort ◽  
P. Southworth
Keyword(s):  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Growth Conditions ◽  
Crystalline Perfection ◽  
Planar Defects ◽  
Chemical Vapor Deposited

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

Chemical-Vapor-Deposited Materials for High Thermal Conductivity Applications

MRS Bulletin ◽  
2001 ◽  
Vol 26 (6) ◽  
pp. 458-463 ◽  
Author(s):  
Jitendra S. Goela ◽  
Nathaniel E. Brese ◽  
Michael A. Pickering ◽  
John E. Graebner
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Thermal Conductivity ◽  
Solid Materials ◽  
Chemical Vapor Deposited

Chemical vapor deposition (CVD) is an attractive method for producing bulk and thin-film materials for a variety of applications. In this method, gaseous reagents condense onto a substrate and then react to produce solid materials. The materials produced by CVD are theoretically dense, highly pure, and have other superior properties.

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