Microstructure observations of silicon carbide nanorods

2000 ◽  
Vol 15 (9) ◽  
pp. 2020-2026 ◽  
Author(s):  
H. Y. Peng ◽  
X. T. Zhou ◽  
H. L. Lai ◽  
N. Wang ◽  
S. T. Lee
Keyword(s):  
Vapor Deposition ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Growth Direction ◽  
Planar Defects ◽  
Resolution Electron ◽  
Short Nanorods ◽  
Hot Filament ◽  
Nanorod Growth

The microstructures of β-SiC nanorods synthesized by hot-filament chemical vapor deposition were studied in detail by high-resolution electron microscopy. Two distinct types of nanorods were identified. The longer nanorods (lengths > 0.1 mm) contained globules at their tips and a relatively low density of stacking faults perpendicular to their [111] growth direction. It was also observed that SiC nanorods that grew along [100] direction contained no planar defects. Meanwhile, Ni was found to be an effective catalyst for SiC nanorod growth. The short nanorods (lengths < 50 nm), which contained no globules at their ends, can grow along [111], [100], or [112] direction. The growth of these nanorods was interpreted by a two-dimensional vapor–solid mechanism.

Growth defects in diamond films

1993 ◽  
Vol 8 (3) ◽  
pp. 473-479 ◽  
Author(s):  
D. Shechtman ◽  
J.L. Hutchison ◽  
L.H. Robins ◽  
E.N. Farabaugh ◽  
A. Feldman
Keyword(s):  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Growth Direction ◽  
Nucleation Site ◽  
Growth Defects ◽  
Resolution Electron ◽  
Intersection Points ◽  
Type 3

Growth defects in diamond films grown by plasma-assisted chemical vapor deposition (CVD) were studied by high resolution electron microscopy. Several features of the microstructure were resolved and their importance to the growth of the diamond film was evaluated. The observations included various twin boundaries of the type ∑ = 3, as well as ∑ = 9, ∑ = 27, and ∑ = 81, which form by an interaction of lower order twins. These higher order boundaries are loci of intersection points of growing planes on two adjacent twins and can serve as an indicator for the local crystal growth direction. The central nucleation site for the growing planes in many cases can be traced back to a quintuplet twin point. A twin quintuplet has five re-entrant angles and thus serves as a preferred nucleation site for new planes as the crystal grows.

Electron microscopic interfacial analysis of diamond film grown on silicon substrate

1996 ◽  
Vol 11 (7) ◽  
pp. 1783-1786 ◽  
Author(s):  
N. Jiang ◽  
A. Hatta ◽  
T. Ito ◽  
Z. Zhang ◽  
T. Sasaki ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Amorphous Solid ◽  
High Resolution Electron Microscopy ◽  
Crystal Defects ◽  
Atomic Scale ◽  
Recrystallization Process ◽  
Electron Microscopic ◽  
Precursor Phase ◽  
Resolution Electron ◽  
Hot Filament

We have investigated the near-interface characterization of diamond films grown on Si(100) substrates by means of a hot-filament chemical-vapor-deposition (HFCVD) method using high-resolution-electron microscopy (HREM). Atomic scale study of the diamond/Si interface reveals that on the top of the amorphous intermediate layer, there exists a precursor phase which seems to be a diamond-like structure, which provides a suitable site for subsequent diamond nucleation. High density crystal defects directly originate from the precursor phase. HREM images also reveal that during the deposition Si recrystallizes in some damaged areas left by pretreatment, such as scratching grooves. In the recrystallization process twins and microtwins can be formed, and amorphous solid is left in the Si crystals.

Chemical Vapor Deposited Boron Carbide: Growth by a Vapor-Liquidsolid Process

1987 ◽  
Vol 97 ◽  
Author(s):  
Ian D. R. Mackinnon ◽  
Katherine L. Smith
Keyword(s):  
Vapor Deposition ◽  
Low Temperatures ◽  
Growth Process ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Chemical Vapor Deposited ◽  
Analytical Electron ◽  
Analytical Electron Microscope ◽  
Oriented Parallel

ABSTRACTDetailed analytical electron microscope (AEM) studies of yellow whiskers produced by chemical vapor deposition (CVD)1 show that two basic types of whiskers are produced at low temperatures (between 1200°C and 1400°C) and low boron to carbon gas ratios. Both whisker types show planar microstructures such as twin planes and stacking faults oriented parallel to, or at a rhombohedral angle to, the growth direction. For both whisker types, the presence of droplet-like terminations containing both Si and Ni indicate that the growth process during CVD is via a vapor-liquid-solid (VLS) mechanism.

Heteroepitaxial Diamond Formed on Silicon Wafer Observed by High Resolution Electron Microscopy

1994 ◽  
Vol 357 ◽  
Author(s):  
Jie Yang ◽  
Zhangda Lin ◽  
Li-Xin Wang ◽  
Sing Jin ◽  
Ze Zhang
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
Diamond Crystals ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Hot Filament

AbstractDiamond films with high preferential orientation (111) on silicon (100) crystalline orientation substrates had been obtained by hot-filament chemical vapor deposition (HFCVD) method. X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, and high-resolution cross-sectional transmission electron microscopy (HREM) are used to characterizate the structure and morphology of the synthesised diamond films. Diamond (111) plans had been local grown epitaxially on the Si(100) substrate observed by HREM. SEM photographes show that plane diamond crystals have been obtained.

scholarly journals The challenge of determining the crystal structure of epitaxial 0001 oriented sp2-BN films

2018 ◽  
Author(s):  
Mikhail Chubarov ◽  
Hans Högberg ◽  
Anne Henry ◽  
Henrik Pedersen
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Structural Identification ◽  
High Resolution Electron Microscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Resolution Electron ◽  
Oriented Films ◽  
Plane Diffraction

<p>Boron nitride (BN) as a thin film is promising for many future electronic applications. On technologically important substrates, 0001 α-Al<sub>2</sub>O<sub>3</sub> and 0001 4H/6H-SiC, chemical vapor deposition yields epitaxial sp<sup>2</sup>-BN films oriented around the c-axis. Here, we seek to point out that sp<sup>2</sup>-BN can form two different polytypes; hexagonal BN (h-BN) and rhombohedral BN (r-BN), only differing in the stacking of the basal planes but with identical distance between the basal planes and in-plane lattice parameters. This makes structural identification challenging in c-axis oriented films. We suggest the use of a combination of high-resolution electron microscopy with careful sample preparation and thin film X-ray diffraction techniques like pole figure measurements and glancing incidence (in-plane) diffraction to fully distinguish h-BN from r-BN.</p>

scholarly journals Microstructure Characterization of Defects in Cubic Silicon Carbide Using Transmission Electron Microscopy

2013 ◽  
Vol 19 (S5) ◽  
pp. 119-122
Author(s):  
Bralee Chayasombat ◽  
Yusuke Kimata ◽  
Tomoharu Tokunaga ◽  
Kotaro Kuroda ◽  
Katsuhiro Sasaki
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Vapor Deposition ◽  
Displacement Vector ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Transmission Electron ◽  
Cubic Silicon Carbide

AbstractMicrostructures of 3C–SiC grown by chemical vapor deposition (CVD) technique on undulant silicon substrate and a further developed technique called switch-back epitaxy (SBE) were studied using transmission electron microscopy (TEM). In case of the CVD sample, the density of the stacking faults was found to be significantly decreasing along growth direction. Sites of collision of stacking faults were observed using high-resolution transmission electron microscopy. Some of the stacking faults were observed to have disappeared after colliding into each other. The stacking faults were identified to be on the same type of plane and had the same type of displacement vector not only in CVD and SBE but also in the epitaxial layer on the SBE SiC samples.

Structural Study of the Innovative 3C-SiC/Si/3C-SiC/Si Heterostructure for Electro-Mechanical Applications

2016 ◽  
Vol 858 ◽  
pp. 143-146 ◽  
Author(s):  
Rami Khazaka ◽  
Marc Portail ◽  
Philippe Vennéguès ◽  
Daniel Alquier ◽  
Jean François Michaud
Keyword(s):  
Chemical Vapor Deposition ◽  
Structural Properties ◽  
Structural Study ◽  
Vapor Deposition ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Subsequent Growth ◽  
Complete Layer ◽  
The Impact

In this work, we report the growth of a 3C-SiC layer oriented along the [111] direction on Si (110)/3C-SiC(001)/Si (001) heterostructure. The growth of the complete layer stack occurs in one deposition run in a Chemical Vapor Deposition (CVD) reactor on on-axis Si (001) substrate. The structural properties of the 3CSiC(111) layer are discussed and the impact of the first 3C-SiC layer on the subsequent growth is highlighted. The 3C-SiC(111) top layer shows two domains rotated by 90o around the growth direction directly linked to the domains rotation in the Si epilayer underneath it. Furthermore, μtwins and stacking faults are present on the inclined (111) planes in the 3C-SiC epilayer.

scholarly journals The challenge of determining the crystal structure of epitaxial 0001 oriented sp2-BN films

2018 ◽  
Author(s):  
Mikhail Chubarov ◽  
Hans Högberg ◽  
Anne Henry ◽  
Henrik Pedersen
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Structural Identification ◽  
High Resolution Electron Microscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Resolution Electron ◽  
Oriented Films ◽  
Plane Diffraction

<p>Boron nitride (BN) as a thin film is promising for many future electronic applications. On technologically important substrates, 0001 α-Al<sub>2</sub>O<sub>3</sub> and 0001 4H/6H-SiC, chemical vapor deposition yields epitaxial sp<sup>2</sup>-BN films oriented around the c-axis. Here, we seek to point out that sp<sup>2</sup>-BN can form two different polytypes; hexagonal BN (h-BN) and rhombohedral BN (r-BN), only differing in the stacking of the basal planes but with identical distance between the basal planes and in-plane lattice parameters. This makes structural identification challenging in c-axis oriented films. We suggest the use of a combination of high-resolution electron microscopy with careful sample preparation and thin film X-ray diffraction techniques like pole figure measurements and glancing incidence (in-plane) diffraction to fully distinguish h-BN from r-BN.</p>

Nano-probe x-ray analysis and high-resolution imaging on planar defects in high-pressure synthesized infinite-layer superconductor

1994 ◽  
Vol 52 ◽  
pp. 728-729
Author(s):  
Y. Y. Wang ◽  
H. Zhang ◽  
V. P. Dravid ◽  
H. Zhang ◽  
L. D. Marks ◽  
...  
Keyword(s):  
High Pressure ◽  
High Resolution ◽  
Atomic Structure ◽  
Emission Spectra ◽  
High Resolution Electron Microscopy ◽  
Planar Defects ◽  
X Ray ◽  
Infinite Layer ◽  
Resolution Electron ◽  
Resolution Imaging

Azuma et al. observed planar defects in a high pressure synthesized infinitelayer compound (i.e. ACuO2 (A=cation)), which exhibits superconductivity at ~110 K. It was proposed that the defects are cation deficient and that the superconductivity in this material is related to the planar defects. In this report, we present quantitative analysis of the planar defects utilizing nanometer probe xray microanalysis, high resolution electron microscopy, and image simulation to determine the chemical composition and atomic structure of the planar defects. We propose an atomic structure model for the planar defects.Infinite-layer samples with the nominal chemical formula, (Sr1-xCax)yCuO2 (x=0.3; y=0.9,1.0,1.1), were prepared using solid state synthesized low pressure forms of (Sr1-xCax)CuO2 with additions of CuO or (Sr1-xCax)2CuO3, followed by a high pressure treatment.Quantitative x-ray microanalysis, with a 1 nm probe, was performed using a cold field emission gun TEM (Hitachi HF-2000) equipped with an Oxford Pentafet thin-window x-ray detector. The probe was positioned on the planar defects, which has a 0.74 nm width, and x-ray emission spectra from the defects were compared with those obtained from vicinity regions.

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