Angle-Resolved X-Ray Photoelectron Spectroscopy for the Characterization of GaAs(001) and Inp(001) Surfaces
Keyword(s):
X Ray
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ABSTRACTElectron scattering and diffraction in X-ray photoemission spectroscopy (XPS) have been used to characterize GaAs(001) and InP(001) chemically etched surfaces. 6a(3d),As(3d), In(4d) and P(2p) photoelectrons have been observed as a function of polar angles for the two [1–10] and [110] azimuths For kinetic energy range of these photoelectrons the experimental results have been correctly predicted by the single-scattering cluster model with spherical-wave corrections.The problems of quantitative measurements in XPS have been discussed in relation with the diffraction phenomena.
Keyword(s):
2014 ◽
Vol 34
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pp. 841-849
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2003 ◽
Vol 18
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pp. 1123-1130
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1986 ◽
Vol 4
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pp. 1580-1584
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2011 ◽
Vol 415-417
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pp. 642-647