Ion Induced Mixing of AlGaAs/GaAs Superlattices

1987 ◽  
Vol 93 ◽  
Author(s):  
T. Venkatesan ◽  
S. A. Schwarz ◽  
P. Mei ◽  
H. W. Yoon
Keyword(s):  
Thermal Stability ◽  
Process Parameters ◽  
Alloy Composition ◽  
Device Fabrication ◽  
Crystalline Quality ◽  
Good Crystalline Quality ◽  
Potential Applications ◽  
Mixed Layers ◽  
High Degree ◽  
Thermal Stability Of

ABSTRACTSubsequent to the implantation of certain ions, the thermal stability of AlGaAs/GaAs superlattices can be reduced, enabling mixing of the layers at temperatures where they would otherwise be stable. The mixed layers have intermediate alloy composition and are of good crystalline quality. As a result this process is of great value in device fabrication where a high degree of vertical and lateral bandgap control is desirable. This paper reviews our work in understanding the mechanism of diffusion, its dependence on varilous process parameters, and potential applications in device fabrication.

scholarly journals Extraordinary thermal behavior of graphene oxide in air for electrode applications

2021 ◽  
Author(s):  
Joong Tark Han ◽  
Joon Young Cho ◽  
Jeong Hoon Kim
Keyword(s):  
Thermal Stability ◽  
Graphene Oxide ◽  
Physical Properties ◽  
Thermal Behavior ◽  
Stability Of Solution ◽  
Exfoliated Graphene ◽  
Potential Applications ◽  
Thermal Stability Of

The thermal stability of solution-exfoliated graphene oxide (GO) in air is one of the most important physical properties influencing its potential applications. To date, majority of the GO prepared by...

Formation and Thermal Stability of Nd0.32Y0.68Si1.7 Layers Formed by Channeled Ion Beam Synthesis

1998 ◽  
Vol 514 ◽  
Author(s):  
M. F. Wu ◽  
A. Vantomne ◽  
S. Hogg ◽  
H. Pattyn ◽  
G. Langouche ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ion Beam ◽  
Hexagonal Structure ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Good Crystalline Quality ◽  
Ion Beam Synthesis ◽  
Thermal Stability Of

ABSTRACTThe Nd-disilicide, which exists only in a tetragonal or an orthorhombic structure, cannot be grown epitaxially on a Si(111) substrate. However, by adding Y and using channeled ion beam synthesis, hexagonal Nd0.32Y0.68Si1.7 epilayers with lattice constant of aepi = 0.3915 nm and cepi = 0.4152 nm and with good crystalline quality (χmin of Nd and Y is 3.5% and 4.3 % respectively) are formed in a Si(111) substrate. This shows that the addition of Y to the Nd-Si system forces the latter into a hexagonal structure. The epilayer is stable up to 950 °C; annealing at 1000 °C results in partial transformation into other phases. The formation, the structure and the thermal stability of this ternary silicide have been studied using Rutherford backscattering/channeling, x-ray diffraction and transmission electron microscopy.

scholarly journals Investigation of the Structure-Property Effect of Phosphorus-Containing Polysulfone on Decomposition and Flame Retardant Epoxy Resin Composites

Polymers ◽  
2019 ◽  
Vol 11 (2) ◽  
pp. 380 ◽  
Author(s):  
Wei Zhao ◽  
Yongxiang Li ◽  
Qiushi Li ◽  
Yiliang Wang ◽  
Gong Wang
Keyword(s):  
Thermal Stability ◽  
Flame Retardant ◽  
Flame Retardancy ◽  
Phosphorus Content ◽  
Structure Property ◽  
Scanning Calorimetry ◽  
Inhibition Effect ◽  
Phosphorus Containing ◽  
High Degree ◽  
Thermal Stability Of

The flame retardant modification of epoxy (EP) is of great signification for aerospace, automotive, marine, and energy industries. In this study, a series of EP composites containing different variations of phosphorus-containing polysulfone (with a phosphorus content of approximately 1.25 wt %) were obtained. The obtained EP/polysulfone composites had a high glass transition temperature (Tg) and high flame retardancy. The influence of phosphorus-containing compounds (ArPN2, ArPO2, ArOPN2 and ArOPO2) on the thermal properties and flame retardancy of EP/polysulfone composites was investigated by thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), a UL-94 vertical burning test, and cone calorimeter tests. The phosphorus-containing polysulfone enhanced the thermal stability of EP. The more stable porous char layer, less flammable gases, and a lower apparent activation energy at a high degree of conversion demonstrated the high gas inhibition effect of phosphorus-containing compounds. Moreover, the gas inhibition effect of polysulfone with a P–C bond was more efficient than the polysulfone with a P–O–C bond. The potential for optimizing flame retardancy while maintaining a high Tg is highlighted in this study. The flame-retardant EP/polysulfone composites with high thermal stability broaden the application field of epoxy.

Diamondlike Carbon Materials as Low-k Dielectrics for Multilevel Interconnects in Ulsi

1996 ◽  
Vol 443 ◽  
Author(s):  
A. Grill ◽  
V. Patel ◽  
K.L. Saenger ◽  
C. Jahnes ◽  
S.A. Cohen ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Dielectric Constants ◽  
Internal Stresses ◽  
Diamondlike Carbon ◽  
Potential Applications ◽  
Etch Stop ◽  
Si Content ◽  
Low K ◽  
Thermal Stability Of

AbstractA variety of diamondlike carbon (DLC) materials were investigated for their potential applications as low-k dielectrics for the back end of the line (BEOL) interconnect structures in ULSI circuits. Hydrogenated DLC and fluorine containing DLC (FDLC) were studied as a low-k interlevel and intralevel dielectrics (ILD), while silicon containing DLC (SiDLC) was studied as a potential low-k etch stop material between adjacent DLC based ILD layers, which can be patterned by oxygen-based plasma etchingIt was found that the dielectric constant (k) of the DLC films can be varied between >3.3 and 2.7 by changing the deposition conditions. The thermal stability of these DLC films was found to be correlated to the values of the dielectric constant, decreasing with decreasing k. While DLC films having dielectric constants k>3.3 appeared to be stable to anneals of 4 hours at 400 °C in He, a film having a dielectric constant of 2.7 was not, losing more than half of its thickness upon exposure to the same anneal. The stresses in the DLC films were found to decrease with decreasing dielectric constant, from 700 MPa to about 250 MPa. FDLC films characterized by a dielectric constant of about 2.8 were found to have similar thermal stability as DLC films with k >3.3. The thermally stable FDLC films have internal stresses <300 MPa and are thus promising candidates as a low-k ILD.For the range of Si contents examined (0-9% C replacement by Si), SiDLC films with a Si content of around 5% appear to provide an effective etch-stop for oxygen RIE of DLC or FDLC films, while retaining desirable electrical characteristics. These films showed a steady state DLC/SiDLC etch rate ratio of about 17, and a dielectric constant only about 30% higher than the 3.3 of DLC.

Effect of Process Parameters on Grafting Ratio and Thermal Stability of Lactide-Grafted Sisal Fiber

2016 ◽  
Vol 14 (1) ◽  
pp. 86-96 ◽  
Author(s):  
Chaolin Ye ◽  
Guozhen Ma ◽  
Zhihua Zhu ◽  
Wuchang Fu ◽  
Junpeng Duan ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Process Parameters ◽  
Sisal Fiber ◽  
Grafting Ratio ◽  
Thermal Stability Of

scholarly journals Acyclic Nucleic Acids with Phosphodiester Linkages—Synthesis, Properties and Potential Applications

2021 ◽  
Vol 11 (24) ◽  
pp. 12125
Author(s):  
Agnieszka Tomaszewska-Antczak ◽  
Piotr Guga
Keyword(s):  
Thermal Stability ◽  
Nucleic Acids ◽  
Synthetic Methods ◽  
Synthesis Properties ◽  
Potential Applications ◽  
Biochemical Research ◽  
Thermal Stability Of

This review summarizes the synthetic efforts on acyclic analogs of nucleic acids and provides information on the most interesting features of selected classes of such compounds. The selection includes the following types of analogs: Flexible (FNA), Unlocked (UNA), Glycol (GNA), Butyl (BuNA), Threoninol (TNA) and Serinol Nucleic Acids (SNA). These classes of analogs are discussed in terms of their synthetic methods, the thermal stability of their homo- and hetero-duplexes and their applicability in biological and biochemical research and nanotechnology.

scholarly journals Encapsulation of Cinnamic Acid on Plant-Based Proteins: Evaluation by HPLC, DSC and FTIR-ATR

Plants ◽  
2021 ◽  
Vol 10 (10) ◽  
pp. 2158
Author(s):  
Mirela Kopjar ◽  
Ivana Buljeta ◽  
Ivana Jelić ◽  
Vanja Kelemen ◽  
Josip Šimunović ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ir Spectra ◽  
Cinnamic Acid ◽  
The Other ◽  
Dsc Analysis ◽  
Protein Matrix ◽  
Potential Applications ◽  
Opposite Behavior ◽  
Protein Matrices ◽  
Thermal Stability Of

Plant-based protein matrices can be used for the formulation of delivery systems of cinnamic acid. Pumpkin, pea and almond protein matrices were used for the formulation of dried complexes. The matrices were used in varying amounts (1%, 2%, 5% and 10%) whilst the amount of cinnamic acid was maintained constant. The obtained complexes were analyzed by HPLC, DSC and FTIR-ATR. The highest amounts of cinnamic acid were determined on complexes prepared by the lowest amounts of protein matrices, regardless of their type. The highest affinity for cinnamic acid adsorption was determined for the pumpkin protein matrix. DSC analysis revealed that adsorption of cinnamic acid caused an increase in the thermal stability of the almond protein matrix, while the other two matrices had the opposite behavior. The complexation of protein matrices and cinnamic acid was proven by recording the IR spectra. The obtained complexes could have potential applications in food products to achieve enrichment with cinnamic acid as well as proteins.

A Study of Interdiffusion, Crystallinity, Strain and Thermal Stability of Si1−xGex/Si Created Using Pulsed Laser Induced Epitaxy (PLIE)

1992 ◽  
Vol 263 ◽  
Author(s):  
K.-Josef Kramer ◽  
S. Talwar ◽  
K. H. Weiner ◽  
T. W. Sigmon
Keyword(s):  
Thermal Stability ◽  
Pulsed Laser ◽  
Alloy Layer ◽  
Device Fabrication ◽  
Silicon Substrates ◽  
Yield Curves ◽  
Ion Channeling ◽  
Good Crystallinity ◽  
Thermal Stability Of ◽  
Xecl Excimer Laser

ABSTRACTHeteroepitaxy of Sil−xGex alloy layers on Si(100) and Si(111) has been achieved using Pulsed Laser Induced Epitaxy (PLIE). The energy of 1-50 pulses from a spatially homogenized XeCl excimer laser is used to melt a structure of electron beam evaporated Germanium on Silicon substrates. On Si(100) substrates alloys with Germanium fractions between 6 and 22% are investigated and exhibit very good crystallinity, as confirmed by MeV-Ion Channeling along the <100> - direction. Heteroepitaxy on Si(l11) yields similar results. MeV-Ion Channeling is also used to determine the level of strain in the layers. This is done by comparing angular yield curves around the <110> - direction for substrate and alloy layer. The obtained strain values are close to calculations for an ideally strained layer state. The strain is also measured for layers that have been subjected to different thermal cycles. As a result of this, predictions of feasibility for subsequent device fabrication can be made for the layers.

Thermal Stability of Anodic Layers on Aluminum Alloys

2015 ◽  
Vol 230 ◽  
pp. 14-18 ◽  
Author(s):  
V. Sokol ◽  
V. Shulgov
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Aluminum Alloy ◽  
Aluminum Alloys ◽  
Open Circuit Potential ◽  
Alloy Composition ◽  
Open Circuit ◽  
Crack Growth Resistance ◽  
Anodic Alumina ◽  
Thermal Stability Of

The thermal stability of anodic alumina layers made by the open circuit potential measurements and electron microscopy is discussed. The crack growth resistance of the anodic alumina layers has been studied depending on the initial aluminum alloy composition and the anodization regimes.

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