Prospects for GaAs-on-Si LSI Circuits

1987 ◽  
Vol 91 ◽  
Author(s):  
H. Shichijo ◽  
L.T. Tran ◽  
R.J. Matyi ◽  
J.W. Lee
Keyword(s):  
Threshold Voltage ◽  
Large Scale ◽  
Recent Progress ◽  
Ring Oscillators ◽  
Standard Process ◽  
Bulk Gaas ◽  
Gaas On Si ◽  
Recent Success ◽  
Bipolar Devices ◽  
Gaas Devices

ABSTRACTThis paper will review some of the recent progress in GaAs-on-Si devices and circuits, and discuss the issues involved in realizing large scale ICs in GaAs-on-Si wafers. With a recent success in fabricating 1 Kbit static RAMs in GaAs-on-Si wafers, it has become apparent that this material is indeed acceptable for LSI complexity circuits. GaAs MESFETs fabricated using a standard process show an excellent threshold voltage uniformity which is comparable to that for bulk GaAs devices. GaAs bipolar devices on GaAs-on-Si have realized a gain of 25 which is the highest reported for bipolar devices in GaAs-on-Si material. Bipolar ring oscillators and 256-bit ROMs consisting of more than 100 gates have also been realized. In spite of these successes, however, there are numerous issues that need to be solved before this material becomes practical.

Recent Progress of Alloyed Ohmic Contacts to GaAs Compound Semiconductors

1992 ◽  
Vol 260 ◽  
Author(s):  
Masanori Murakami ◽  
A. Otsuki ◽  
K. Tanahashi ◽  
H. J. Tarata ◽  
A. Callegari ◽  
...  
Keyword(s):  
Large Scale ◽  
Ohmic Contacts ◽  
Recent Progress ◽  
Excellent Thermal Stability ◽  
The Poor ◽  
Gaas Devices ◽  
Large Scale Integration ◽  
Smooth Contact ◽  
Scale Integration ◽  
Integration Levels

ABSTRACTLow resistance, alloyed AuGeNi Ohmic contacts have been extensively used in the current manufacturing GaAs devices. However, extension of usage of these devices to Very Large Scale Integration levels requires the contacts with excellent thermal stability, shallow diffusion depth, and smooth contact surface in addition to low contact resistance. In the present paper recent studies for development of “non-gold” Ohmic contacts which improve the poor contact properties of the alloyed Ohmic contacts are rev i ewed.

GaAs MESFET's on Silicon Substrates for Digital IC Applications

1986 ◽  
Vol 67 ◽  
Author(s):  
Hisashi Shichijo ◽  
Jhang Woo Lee
Keyword(s):  
Threshold Voltage ◽  
Silicon Substrate ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Device Structure ◽  
Bulk Gaas ◽  
Gaas On Si

ABSTRACTThe characteristics of GaAs MESFETs in GaAs-on-Si have been studied in detail for digital IC applications. The device structure utilizes GaAs and AlGaAs undoped buffer layers grown on a 3 degrees off (100) silicon substrate by MBE. The threshold voltage of the MESFET is adjusted by recessing the gate.The maximum observed transconductance of 135 mS/mm is comparable to what is expected from the bulk GaAs device with the same parameters. The device also shows good pinch-off characteristics. Both enhancement and depletion mode MESFETs have been fabricated.

Recent Progress in Machine Learning-based Prediction of Peptide Activity for Drug Discovery

2019 ◽  
Vol 19 (1) ◽  
pp. 4-16 ◽  
Author(s):  
Qihui Wu ◽  
Hanzhong Ke ◽  
Dongli Li ◽  
Qi Wang ◽  
Jiansong Fang ◽  
...  
Keyword(s):  
Machine Learning ◽  
Drug Discovery ◽  
Large Scale ◽  
Recent Progress ◽  
High Specificity ◽  
Learning Approaches ◽  
Anticancer Peptides ◽  
The Past ◽  
Traditional Approaches ◽  
Large Scale Screening

Over the past decades, peptide as a therapeutic candidate has received increasing attention in drug discovery, especially for antimicrobial peptides (AMPs), anticancer peptides (ACPs) and antiinflammatory peptides (AIPs). It is considered that the peptides can regulate various complex diseases which are previously untouchable. In recent years, the critical problem of antimicrobial resistance drives the pharmaceutical industry to look for new therapeutic agents. Compared to organic small drugs, peptide- based therapy exhibits high specificity and minimal toxicity. Thus, peptides are widely recruited in the design and discovery of new potent drugs. Currently, large-scale screening of peptide activity with traditional approaches is costly, time-consuming and labor-intensive. Hence, in silico methods, mainly machine learning approaches, for their accuracy and effectiveness, have been introduced to predict the peptide activity. In this review, we document the recent progress in machine learning-based prediction of peptides which will be of great benefit to the discovery of potential active AMPs, ACPs and AIPs.

scholarly journals Scaling capacity of fiber-optic transmission systems via silicon photonics

Nanophotonics ◽  
2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Wei Shi ◽  
Ye Tian ◽  
Antoine Gervais
Keyword(s):  
Silicon Photonics ◽  
Communication Systems ◽  
Large Scale ◽  
Recent Progress ◽  
Fiber Optic ◽  
Rapid Evolution ◽  
System Capacity ◽  
Disruptive Technology ◽  
System Perspective ◽  
Silicon Photonic

AbstractThe tremendous growth of data traffic has spurred a rapid evolution of optical communications for a higher data transmission capacity. Next-generation fiber-optic communication systems will require dramatically increased complexity that cannot be obtained using discrete components. In this context, silicon photonics is quickly maturing. Capable of manipulating electrons and photons on the same platform, this disruptive technology promises to cram more complexity on a single chip, leading to orders-of-magnitude reduction of integrated photonic systems in size, energy, and cost. This paper provides a system perspective and reviews recent progress in silicon photonics probing all dimensions of light to scale the capacity of fiber-optic networks toward terabits-per-second per optical interface and petabits-per-second per transmission link. Firstly, we overview fundamentals and the evolving trends of silicon photonic fabrication process. Then, we focus on recent progress in silicon coherent optical transceivers. Further scaling the system capacity requires multiplexing techniques in all the dimensions of light: wavelength, polarization, and space, for which we have seen impressive demonstrations of on-chip functionalities such as polarization diversity circuits and wavelength- and space-division multiplexers. Despite these advances, large-scale silicon photonic integrated circuits incorporating a variety of active and passive functionalities still face considerable challenges, many of which will eventually be addressed as the technology continues evolving with the entire ecosystem at a fast pace.

scholarly journals Strategy for large‐scale monolithic Perovskite /Silicon tandem solar cell: A review of recent progress

EcoMat ◽  
2021 ◽  
Author(s):  
Chan Ul Kim ◽  
Eui Dae Jung ◽  
Young Wook Noh ◽  
Seong Kuk Seo ◽  
Yunseong Choi ◽  
...  
Keyword(s):  
Solar Cell ◽  
Large Scale ◽  
Recent Progress ◽  
Tandem Solar Cell

Recent Progress in SOI Materials and Devices for VLSI Applications

1993 ◽  
Vol 316 ◽  
Author(s):  
H. H. Hosack
Keyword(s):  
High Performance ◽  
Large Scale ◽  
Recent Progress ◽  
Low Voltage ◽  
Silicon On Insulator ◽  
Significant Interest ◽  
Significant Performance ◽  
Cmos Ic ◽  
Bulk Processing ◽  
Soi Technology

Silicon-On-Insulator (SOI) technology [1-4] has been shown to have significant performance and fabrication advantages over conventional bulk processing for a wide variety of large scale CMOS IC applications. Advantages in radiation environments has generated significant interest in this technology from military and space science communities [5,6]. Possible advantages of SOI technology for low power, low voltage and high performance circuit applications is under serious consideration by several commercial IC manufacturers [7,8].

scholarly journals Hot Gas Filters for Coal and Biomass Power Systems

1999 ◽  
Author(s):  
R. A. Newby ◽  
T. E. Lippert ◽  
M. A. Alvin ◽  
G. J. Bruck ◽  
Z. N. Sanjana ◽  
...  
Keyword(s):  
Power Generation ◽  
Power Systems ◽  
Large Scale ◽  
Recent Progress ◽  
Environmental Constraints ◽  
Development Programs ◽  
Key Technology ◽  
Hot Gas ◽  
Filter Test ◽  
Power Generation Systems

Several advanced, coal- and biomass-based combustion turbine power generation technologies are currently under development and demonstration. A key technology component in these power generation systems is the hot gas filter. These power generation technologies must utilize highly reliable and efficient hot gas filter systems to protect the turbine and to meet environmental constraints if their full thermal efficiency and cost potential is to be realized. Siemens Westinghouse Power Corporation (SWPC) has developed a hot gas filter system to near-commercial status for large-scale power generation applications. This paper reviews recent progress made by SWPC in hot gas filter test development programs and in major demonstration programs. Two advanced hot gas filter concepts, the “Inverted Candle” and the “Sheet Filter”, having the potential for superior reliability are also described.

Tin-Gold Contacts for Planar Bulk GaAs Devices

1968 ◽  
Vol 24 (1) ◽  
pp. 110-114 ◽  
Author(s):  
Toshiya Hayashi ◽  
Michiyuki Uenohara ◽  
Iwao Takao
Keyword(s):  
Bulk Gaas ◽  
Gaas Devices ◽  
Gold Contacts
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