Characterization of GaAs and Ge Films on (100) Silicon

1987 ◽  
Vol 91 ◽  
Author(s):  
J.-M. Baribeau ◽  
D.C. Houghton ◽  
P. MaignÉ ◽  
W.T. Moore ◽  
R.L.S. Devine ◽  
...  
Keyword(s):  
Surface Preparation ◽  
Group Iv ◽  
Ex Situ ◽  
Rapid Thermal Anneal ◽  
Defect Reduction ◽  
Group Iii ◽  
Superlattice Dislocation ◽  
Strained Layer Superlattice

ABSTRACTA UHV MBE apparatus in which the deposition of both group IV and group III-V components is possible without breaking vacuum has been utilized to compare the growth of GaAs epilayers on non-polar Si(100) and Ge coated Si(100) substrates. In addition, a comparison of GaAs epilayers grown on substrates cleaned by ex-situ techniques and on substrates given all UHV in-situ surface preparation was made. Defect reduction by the incorporation of strained-layer superlattice dislocation filters and by post-growth rapid thermal anneal (RTA) thermal cycles was also investigated. Optical and material properties comparable to MBE grown GaAs/GaAs were obtained for GaAs grown on Ge coated Si(100) substrates.

Design and comparison of ex situ and in situ devices for Raman characterization of lithium titanate anode material

Ionics ◽  
2011 ◽  
Vol 17 (6) ◽  
pp. 503-509 ◽  
Author(s):  
Jie Shu ◽  
Miao Shui ◽  
Dan Xu ◽  
Shan Gao ◽  
Tingfeng Yi ◽  
...  
Keyword(s):  
Anode Material ◽  
Lithium Titanate ◽  
Ex Situ ◽  
Raman Characterization

In-situ and ex-situ characterization of surface oxide films on AB5-type metal hydride electrodes

1999 ◽  
Vol 293-295 ◽  
pp. 747-750 ◽  
Author(s):  
J.M Nan ◽  
Y Yang ◽  
J.K You ◽  
X.Q Li ◽  
Z.G Lin
Keyword(s):  
Metal Hydride ◽  
Oxide Films ◽  
Surface Oxide ◽  
Ex Situ ◽  
Metal Hydride Electrodes

Study of As and P Incorporation Behavior in GaAsP by Gas-Source Molecular-Beam Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Ex Situ ◽  
Limited Growth ◽  
Group V ◽  
Group Iii ◽  
Gas Source ◽  
Simple Kinetic Model

ABSTRACTA simple kinetic model has been developed to explain the agreement between in situ and ex situ determination of phosphorus composition in GaAs1−xPx (x < 0.4) epilayers grown on GaAs (001) by gas-source molecular-beam epitaxy (GSMBE). The in situ determination is by monitoring the intensity oscillations of reflection high-energy-electron diffraction during group-V-limited growth, and the ex situ determination is by x-ray rocking curve measurement of GaAs1−xPx/GaAs strained-layer superlattices grown under group-III-limited growth condition.

scholarly journals In-Situ and Ex-Situ Characterization of Evolution of Defects in AlGaN/GaN HEMTs under Bias

2013 ◽  
Vol 19 (S2) ◽  
pp. 452-453
Author(s):  
H. Ghassemi ◽  
A. Lang ◽  
C. Johnson ◽  
R. Wang ◽  
B. Song ◽  
...  
Keyword(s):  
Ex Situ ◽  
Gan Hemts

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

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