Transient Spectroscopy and Related Optical Studies in Diluted Magnetic Semiconductor Superlattices

1986 ◽  
Vol 89 ◽  
Author(s):  
A. V. Nurmikko ◽  
L. A. Kolodziejski ◽  
R. L. Gunshor
Keyword(s):  
Magnetic Semiconductors ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Electronic Excitations ◽  
Magnetic Polarons ◽  
Antiferromagnetic Ordering ◽  
Ultrathin Layers ◽  
Diluted Magnetic ◽  
Transient Spectroscopy ◽  
State Of Affairs

AbstractRecent successes in molecular beam (MBE) epitaxial growth of diluted magnetic semiconductor (DMS) artificial microstructures are now generating structures in which optically excited lower dimensional electronic and magnetic phenomena can be investigated. We consider an example which illustrates the present early state of affairs: transient magnetic polarons in connection with localized quasi 2-dimensional (2D) electronic excitations. We also comment on recent measurements and antiferromagnetic ordering in ultrathin layers in magnetic semiconductors.

Magnetic Properties of New Diluted Magnetic Semiconductors Pb1-X-YMgXYbYTe

2010 ◽  
Vol 168-169 ◽  
pp. 376-379
Author(s):  
E.A. Zvereva ◽  
O.A. Savelieva ◽  
S. Ibragimov ◽  
Y. Titov ◽  
E.I. Slynko ◽  
...  
Keyword(s):  
Magnetic Susceptibility ◽  
Magnetic Moment ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Electron Shell ◽  
Interaction Constant ◽  
Paramagnetic Resonance ◽  
Diluted Magnetic

We have studied the magnetic susceptibility, magnetization and electron paramagnetic resonance (EPR) in the diluted magnetic semiconductor Pb1-x-yMgxYbyTe. The magnetic susceptibility of this system is a superposition of the matrix diamagnetism, the paramagnetic contribution of electrons localized in the ytterbium band, and the Curie-Weiss paramagnetism provided by Yb3+ ions. The concentration of Yb3+ ions monotonically increases with the ytterbium content, while a significant fraction of ytterbium ions remains in a nonmagnetic Yb2+ state. A pronounced hyperfine structure was revealed in the EPR spectra. It was ascribed to the interaction between the electron magnetic moment of an unfilled electron shell of Yb3+ ions and nuclear magnetic moment of the 173Yb isotope. The estimated values of the effective g-factor (g1.997 0.002) and the hyperfine-interaction constant (173A=0,56 cm-1) were found to be almost independent of both alloy composition and temperature.

Submicron Heterostructures of Diluted Magnetic Semiconductors

1986 ◽  
Vol 89 ◽  
Author(s):  
R. L. Gunshor ◽  
L. A. Kolodziejski ◽  
N. Otsuka ◽  
S. Datta ◽  
A. V. Nurmikko
Keyword(s):  
Diluted Magnetic Semiconductors ◽  
Film Growth ◽  
Magnetic Semiconductors ◽  
Magnetic Semiconductor ◽  
High Energy ◽  
Substrate Material ◽  
Thin Film Growth ◽  
Quantum Well Structures ◽  
Antiferromagnetic Ordering ◽  
Diluted Magnetic

AbstractThe successful thin film growth of diluted magnetic semiconductors (DMS) by molecular beam epitaxy has “nucleated” a new field of research in which the DMS material is incorporated in a variety of novel superlattice and quantum well structures. The observation of reflection high energy electron diffraction intensity oscillations in ZnSe and MnSe has enabled the fabrication of ultrathin layered structures involving the “hypothetical” zincblende magnetic semiconductor MnSe. The expected antiferromagnetic ordering of MnSe is increasingly inhibited as the MnSe layer thickness is reduced from ten monolayers to the quasi-2D limit of one monolayer. Further developments include new observations of the epitaxial growth and nucleation of ZnSe, utilizing GaAs epilayers as the substrate material.

Effect of Growth Temperature on Structural and Magneto-Transport Properties of Co-Doped In2O3 Diluted Magnetic Semiconductors

2008 ◽  
Vol 1119 ◽  
Author(s):  
A Ghosh ◽  
R K Gupta ◽  
P K Kahol ◽  
K Ghosh
Keyword(s):  
Transport Properties ◽  
Growth Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Force Microscopy ◽  
Atomic Force ◽  
Diluted Magnetic ◽  
Co Doped

AbstractThin films of Co-doped In2O3 diluted magnetic semiconductor have been grown on c-plane sapphire single crystals using pulsed laser deposition technique. Different characterizations such as x-ray diffraction, atomic force microscopy, and magneto-transport have been carried out to study the effect of growth temperature on structural, electrical, and magneto-transport properties of these films. Crystalinity of the films increases with the growth temperature. The films grown at high temperature have preferred orientation along (222) direction, while films grown at low temperature behave more like to nanocrystaline. It is observed that electrical properties of the films strongly depend on growth temperature. The resistivity and magnetoresistance of the films decreases with increase in growth temperature. On the other hand, mobility of the films increases with increase in growth temperature. This could be due to improvement in crystalinity of the films.

Synthesis Methods Evaluation for Preparation of the Zno:Co Diluted Magnetic Semiconductor (DMS)

2008 ◽  
Vol 591-593 ◽  
pp. 387-391
Author(s):  
Lucianna Gama ◽  
M.A. Ribeiro ◽  
Débora A. Vieira ◽  
A.M.C. Santos ◽  
Ruth Herta Goldsmith Aliaga Kiminami ◽  
...  
Keyword(s):  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic Semiconductor ◽  
Pechini Method ◽  
Magnetic Semiconductor ◽  
Nitrogen Adsorption ◽  
Synthesis Methods ◽  
Diluted Magnetic ◽  
Superficial Area

Diluted magnetic semiconductors (DMS), which have both semiconducting and magnetic properties, are those in which transitions metal ions substitute cations of host semiconductor materials [1]. There is a great interest for DMS for use as the material of spintronics. In this study is reported the structural and morphologic characterization of Zn1.95Co0.05O nanoparticles obtained by Pechini method and combustion reaction. The powders resulting were characterized by X-ray diffraction (XRD) for determination of the phases, crystalline phase and lattice parameter; nitrogen adsorption by BET for determination of the specific superficial area and calculation the particle size from the superficial area and scanning electron microscopy (SEM) for morphologic analysis. The XRD results demonstrated the viability of obtaining crystalline and nanosize powders by the both synthesis routes. For all samples the average crystallite sizes was nanosized, but the powders obtained by reaction combustion is smaller. The SEM micrographs shows that the powders obtained for both syntheses are constituted of soft agglomerates.

Exciton magnetic polarons in asymmetric diluted magnetic semiconductor quantum wells

1999 ◽  
Vol 60 (16) ◽  
pp. 11545-11549 ◽  
Author(s):  
T. Stirner ◽  
J. Miao ◽  
W. E. Hagston ◽  
S. Takeyama ◽  
G. Karczewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Magnetic Polarons ◽  
Semiconductor Quantum Wells ◽  
Diluted Magnetic

Combinatorial Search for Transparent Oxide Diluted Magnetic Semiconductors

2001 ◽  
Vol 700 ◽  
Author(s):  
T. Fukumura ◽  
M. Kawasaki ◽  
Zhengwu Jin ◽  
H. Kimura ◽  
Y. Yamada ◽  
...  
Keyword(s):  
High Throughput Screening ◽  
Degrees Of Freedom ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Combinatorial Search ◽  
Materials Synthesis ◽  
Transparent Oxide ◽  
Diluted Magnetic

AbstractDiluted magnetic semiconductor (DMS) possesses charge and spin degrees of freedom leading to their interplay promising for novel devices. DMSs based on II-VI and III-V compound semiconductors have been extensively studied so far. Recently, the oxide semiconductors doped with transition metal magnetic impurity have attracted much attention for the possible high ferromagnetic Curie temperature. Here, we overview recent studies of the transparent oxide based DMSs, ZnO, TiO2, and SnO2 doped with 3d transition metals, by using the combinatorial materials synthesis and the high throughput screening.

scholarly journals Shubnikov-de Haas oscillations in diluted magnetic semiconductors (Cd1-x-yZnxMny)3As2

2018 ◽  
Vol 185 ◽  
pp. 06001
Author(s):  
Vasilii S. Zakhvalinskii ◽  
Tatyana B. Nikulicheva ◽  
Erkki Lähderanta ◽  
Aleksey V. Kochura ◽  
Ekaterina A. Nikitovskaia ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Solid Solutions ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Shubnikov De Haas Oscillations ◽  
Diluted Magnetic ◽  
The Magnetic Field ◽  
Cyclotron Mass

Single crystals of a diluted magnetic semiconductor (Cd1-x-yZnxMny)3As2 (CZMA) (x + y = 0.4;y=0.04 and 0.08) obtained by Bridgman method were used. The Shubnikov-de Haas (SdH) effect was observed within studying of the dependence of the resistivity on the magnetic field in CZMA solid solutions. The values of the cyclotron mass mc, Hall and Shubnikov carrier concentrations were calculated.

Effects of Exchange Interaction in Diluted Magnetic Semiconductor Quantum Wells

1986 ◽  
Vol 89 ◽  
Author(s):  
Jacek Kossut ◽  
Jacek K. Furdyna
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Transition Metal Ions ◽  
Spin Coupling ◽  
Diluted Magnetic ◽  
The Magnetic Field

AbstractThe presence of transition metal ions (typically Mn2+) in diluted magnetic semiconductors (DMS) results in a strong spin-spin coupling between localized magnetic moments and band electrons. This leads to considerable modifications of the semiconductor band structure in the presence of strong magnetic fields, e.g., to large spin-dependent shifts of the electronic states at the band edge. This feature is of particular interest in the context of quantum wells involving DMS. Starting with the original idea of a “spin-superlattice”, we concentrate on various opportunities which arise due to the tunability of the depth of the quantum wells by the magnetic field and/or temperature associated with the aforementioned spindependent effects. Thus, we discuss boil-off and freeze-out of electrons to and from quantum wells, selective spin tunneling across the barriers, tunable infrared emitters, enhancement of electronic g-factors in shallow non-magnetic wells surrounded by DMS barriers, the possibility of transition from a type-1 to a type-il superlattice induced by the magnetic field, and quantum oscillations anomalies in DMS quantum wells.

Magnetic polarons in a single diluted magnetic semiconductor quantum dot

2000 ◽  
Vol 62 (12) ◽  
pp. R7767-R7770 ◽  
Author(s):  
A. A. Maksimov ◽  
G. Bacher ◽  
A. McDonald ◽  
V. D. Kulakovskii ◽  
A. Forchel ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Semiconductor Quantum Dot ◽  
Magnetic Polarons ◽  
Diluted Magnetic
Sign in / Sign up

Export Citation Format

Share Document