Very High Mobility in Semimagnetic Semiconductors with Rare Earth

1986 ◽  
Vol 89 ◽  
Author(s):  
Averous M ◽  
Lombos B.A. ◽  
Bruno A. ◽  
Lascaray J.P. ◽  
Fau C. ◽  
...  
Keyword(s):  
Rare Earth ◽  
High Mobility ◽  
Specific Character ◽  
Semimagnetic Semiconductors ◽  
Magnetic Ion ◽  
Very High

AbstractA semimagnetic semiconductor with rare earth like magnetic ion is studied: Pb1-xGdxTe. Very high Hall mobilities were found up to 107 cm2/V.s. The magnetization is well fitted at 4.2K by a Curie-Weisslaw, with a Gaj's parameter of 1K. The value of JNN' the exchange in a Gd pair deduced from the susceptibility measurements is small, as expected, due to the specific character of Gadolinium (S state and 4f shell): JNN/k = - O.3°K for x = 0.025.

scholarly journals Comparison Between Pressure Swing Adsorption and Liquid Oxygen Enrichment Techniques in the Atacama Large Millimeter/Submillimeter Array Facility at the Chajnantor Plateau (5,050 m)

2021 ◽  
Vol 12 ◽  
Author(s):  
Ivan Lopez ◽  
Reinaldo Aravena ◽  
Daniel Soza ◽  
Alicia Morales ◽  
Silvia Riquelme ◽  
...  
Keyword(s):  
High Altitude ◽  
Pressure Swing Adsorption ◽  
Large Scale ◽  
High Mobility ◽  
Oxygen Enrichment ◽  
Oxygen Availability ◽  
Liquid Oxygen ◽  
High Altitudes ◽  
Pressure Swing ◽  
Very High

The Chilean workforce has over 200,000 people that are intermittently exposed to altitudes over 4,000 m. In 2012, the Ministry of Health provided a technical guide for high-altitude workers that included a series of actions to mitigate the effects of hypoxia. Previous studies have shown the positive effect of oxygen enrichment at high altitudes. The Atacama Large Millimeter/submillimeter Array (ALMA) radiotelescope operates at 5,050 m [Array Operations Site (AOS)] and is the only place in the world where pressure swing adsorption (PSA) and liquid oxygen technologies have been installed at a large scale. These technologies reduce the equivalent altitude by increasing oxygen availability. This study aims to perform a retrospective comparison between the use of both technologies during operation in ALMA at 5,050 m. In each condition, variables such as oxygen (O2), temperature, and humidity were continuously recorded in each AOS rooms, and cardiorespiratory variables were registered. In addition, we compared portable O2 by using continuous or demand flow during outdoor activities at very high altitudes. The outcomes showed no differences between production procedures (PSA or liquid oxygen) in regulating oxygen availability at AOS facilities. As a result, big-scale installations have difficulties reaching the appropriate O2 concentration due to leaks in high mobility areas. In addition, the PSA plant requires adequacy and maintenance to operate at a very high altitude. A continuous flow of 2–3 l/min of portable O2 is recommended at 5,050 m.

High Mobility a-Si:H TFT Fabricated by Hot Wire Chemical Vapor Deposition

2010 ◽  
Vol 1245 ◽  
Author(s):  
Chun-Yuan Hsueh ◽  
Chieh-Hung Yang ◽  
Si-Chen Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
High Mobility ◽  
Chemical Vapor ◽  
Field Effect Mobility ◽  
Hot Wire ◽  
Low Threshold ◽  
Hydrogenated Amorphous ◽  
Very High

AbstractThe hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) having a very high field-effect mobility of 1.76 cm2/V-s and a low threshold voltage of 2.43 V have been fabricated successfully using the hot wire chemical vapor deposition (HWCVD).

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