Charged Drop Levitators and their Applications

1986 ◽  
Vol 87 ◽  
Author(s):  
W. K. Rhim ◽  
S. K. Chung ◽  
M. T. Hyson ◽  
D. D. Elleman
Keyword(s):  
Crystal Growth ◽  
Gaseous Medium ◽  
Charged Droplet ◽  
Large Drop ◽  
Charged Drop ◽  
Drop Dynamics ◽  
Direct Contrast ◽  
Electrostatic Levitator ◽  
Drop Instability ◽  
Rayleigh Limit

AbstractCharged drop levitation is described for two different kinds of levitators. It is demonstrated that the feedback-controlled electrostatic levitator is capable of levitating a several milimeter size large drop in 1 g, and it can be used in various experiments such as crystal growth, supercooling and solidification, and drop dynamics. Charged droplet levitation in a vertical, linear quadrupole levitator is described, and its advantages are demonstrated taking the charged drop instability experiment as an example. The cause of the observed premature burstings are speculated to be not by the Rayleigh limit but, rather, by an electron avalanch in the surrounding gaseous medium. No evidence was found that the burtings accompaied by mass loss, in direct contrast to the most of the previous reports by Doyle et.al.and Abbas and Latham.

scholarly journals Transverse transport properties of a charged drop in an electric field

2015 ◽  
Vol 24 (05) ◽  
pp. 1550034 ◽  
Author(s):  
S. Bondarenko ◽  
K. Komoshvili
Keyword(s):  
Distribution Function ◽  
Electric Field ◽  
Transport Properties ◽  
High Energy ◽  
Time Dependent ◽  
Charged Droplet ◽  
Interacting Particles ◽  
Charged Drop ◽  
Weakly Interacting ◽  
Weakly Interacting Particles

Transport properties of a charged droplet of weakly interacting particles in transverse electric field are investigated. Nonequilibrium, time-dependent distribution function which describes a process of the droplet transverse evolution with constant entropy in the field is calculated. With the help of this distribution function, shear viscosity coefficients in the transverse plane are calculated as well. They are found to be dependent on the ratio of the potential energy of the droplet in the electric field to the kinetic energy of the droplet; for weakly interacting particles, this parameter is small. Additionally, these coefficients are time-dependent and change during the hydrodynamical state of the droplet's expansion. Applicability of the results to the description of initial states of quark–gluon plasma (QGP) obtained in high-energy interactions of nuclei is also discussed.

Charged Drop Dynamics Experiment Using an Electrostatic-Acoustic Hybrid System

1986 ◽  
Vol 87 ◽  
Author(s):  
W. K. Rhim ◽  
S. K. Chung ◽  
E. H. Trinh ◽  
D. D. Elleman
Keyword(s):  
Surface Tension ◽  
Rigid Body ◽  
Hybrid System ◽  
Acoustic Pressure ◽  
Water Drop ◽  
Effective Surface ◽  
Charged Drop ◽  
Drop Dynamics ◽  
Equilibrium Shapes ◽  
A Charge

AbstractIn this paper, we describe the design and the performance of an electrostatic-acoustic hybrid system and its application to a charge drop rotation experiment. This system can levitate a charged drop electrostatically and induce drop rotation or oscillation by imposing an acoustic torque or an oscillating acoustic pressure. Using this system, the equilibrium shapes and stability of a rotating charged drop were experimentally investigated. A 3 mm size water drop was rotated as a rigid body and its gyrostatic equilibrium shapes were observed. Families of axisymmetric shapes, two-lobed shapes, and eventual fissioning have been observed. With the assumption of “effective surface tension” in which the surface charge simply modified the surface tension of neutral liquid, the results agree exceptionally well with the Brown and Scriven's prediction for uncharged drops.

scholarly journals CAPE - A link amid thermodynamics and microphysics for the occurrence of severe thunderstorms

MAUSAM ◽  
2021 ◽  
Vol 57 (2) ◽  
pp. 249-254
Author(s):  
SUTAPA CHAUDHURI ◽  
SUCHANDRA AICH BHOWMICK
Keyword(s):  
Monsoon Season ◽  
Convective Available Potential Energy ◽  
Cloud Microphysics ◽  
Large Drop ◽  
Neutral Buoyancy ◽  
Severe Thunderstorm ◽  
Severe Thunderstorms ◽  
Cloud Microphysical Processes ◽  
Microphysical Processes ◽  
Drop Instability

Lkkj & bl 'kks/k&i= dk mÌs’; dksydkrk ¼22°32¢] 88°20¢½ esa ekulwu iwoZ _rq ¼vizSy&ebZ½ ds nkSjku xtZ ds lkFk vkus okys Hkh"k.k rwQkuksa dh mRifÙk vkSj fodkl esa lgk;d es?k dh lw{e HkkSfrdh; izfØ;kvksa dh tk¡p djuk gSA bl v/;;u ls ;g irk pyk gS fd dksydkrk esa ekulwu&iwoZ _rq ds nkSjku xtZ ds lkFk vkus okys Hkh"k.k rwQkuksa ds nkSjku rkixfrdh;] xfrdh;] es?k dh lw{e HkkSfrdh vkSj fctyh pdeus dks J`a[kykc) djus esa laoguh; miyC/k foHko ÅtkZ ¼lh- ,- ih- bZ-½ lgk;d gSA bl v/;;u ls izkIr gq, ifj.kkeksa ls ;g irk pyk gS fd dksydkrk esa laoguh; miyC/k foHko ÅtkZ 1000 twYl izfr fd- xzk- ds Hkhrj izcy ikbZ xbZ tks eqDr laogu Lrj ¼,y- ,Q- lh-½ ls Åij fu/kkZfjr nkc Lrjksa ds Hkhrj ikbZ xbZ vkSj ok;q dh viMªk¶V xfr ds ln`’k eku fu"izHkkoh mRIykodrk Lrj ¼,y- ,u- ch-½ esa yxHkx 30 - 50 eh-@ lsdsaM ik, x,A bl v/;;u ls ;g Hkh irk pyk gS fd 5 fe- eh- rd ds O;kl ds vkdkj dh c¡wns fLFkj jg ldrh gS ftlds ckn vkdkj c<+us ds dkj.k cw¡nsa VwV tkrh gSaA tc cw¡n dh f=T;k 2-5 fe- eh- ls 3 fe- eh- dh ifjf/k esa gksrh gS rc cw¡nksa dk VwVuk  'kq: gks tkrk gS vkSj 3 fe- eh- ls 5 fe- eh- dh ifjf/k esa cw¡nksa ds VwVus dh laHkkouk vf/kd gksrh gS D;ksfd bl fLFkfr esa cw¡nksa ds yxkrkj VwVus dh dkj.k mudk thoudky cgqr NksVk gks tkrk gSA  The aim of the present paper is to view the cloud microphysical processes entailed in the genesis and the development of the severe thunderstorms of pre-monsoon season (April - May) over Kolkata (22°32', 88°20'). The study shows that Convective Available Potential Energy (CAPE) is instrumental in establishing a linkage among thermodynamics, dynamics, cloud microphysics, and lightning during severe thunderstorm of pre monsoon season over Kolkata. The results of the present study reveal that for the thunderstorms reported over Kolkata, CAPE are found to be predominantly within 1000 joules per kgs within the prescribed pressure levels above the Level of Free Convection (LFC) and the corresponding values of the updraft speeds of the air are found to be nearly 30 - 50 m/s at the Level of Neutral Buoyancy (LNB). The study also depicts that the drops may grow up to the size of 5mm in diameter stably, beyond which, they tend to breakup due to the large drop instability. The breakup or splitting is observed to initiate when the drop radius is within the range of 2.5mm to 3mm and the breakup is most likely within the range of 3mm to 5mm because at this stage the lifetime of the drops are short due to the spontaneous breakup.  

Montmorillonite Dendrites

1974 ◽  
Vol 32 ◽  
pp. 454-455
Author(s):  
Necip Güven ◽  
Rodney W. Pease
Keyword(s):  
Crystal Growth ◽  
Growth Mechanism ◽  
Growth Front ◽  
Morphological Features ◽  
Dendritic Crystal ◽  
Crystal Growth Mechanism

Morphological features of montmorillonite aggregates in a large number of samples suggest that they may be formed by a dendritic crystal growth mechanism (i.e., tree-like growth by branching of a growth front).

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

STM studies of crystal growth

1991 ◽  
Vol 49 ◽  
pp. 374-375
Author(s):  
M. G. Lagally
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Sputter Deposition ◽  
Field Of View ◽  
Scanning Tunneling ◽  
Wide Field ◽  
Tunneling Microscopy ◽  
Wide Field Of View ◽  
The One

It has been recognized since the earliest days of crystal growth that kinetic processes of all Kinds control the nature of the growth. As the technology of crystal growth has become ever more refined, with the advent of such atomistic processes as molecular beam epitaxy, chemical vapor deposition, sputter deposition, and plasma enhanced techniques for the creation of “crystals” as little as one or a few atomic layers thick, multilayer structures, and novel materials combinations, the need to understand the mechanisms controlling the growth process is becoming more critical. Unfortunately, available techniques have not lent themselves well to obtaining a truly microscopic picture of such processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (of the order of micrometers) scanning tunneling microscopy (STM) gives us this opportunity. In this talk, we briefly review the types of growth kinetics measurements that can be made using STM. The use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field.

Improvements on the gaseous detector device

1986 ◽  
Vol 44 ◽  
pp. 630-631 ◽  
Author(s):  
G.D. Danilatos
Keyword(s):  
Gaseous Medium ◽  
The Other ◽  
Beam Specimen ◽  
Thin Wires ◽  
Interference Noise ◽  
Backscattered Electron ◽  
Detection Of Signals ◽  
Environmental Sem

The possibility of placing the specimen in a gaseous medium in the environmental SEM (ESEM) has created novel ways for detection of signals from the beam-specimen interactions. It was originally reported by Oanilatos that the ionization produced by certain signals inside the conditioning medium can be used to produce images. The aim of this report is to demonstrate some of the improvements on the system that have occurred thereafter.Two straight thin wires are aligned horizontally along a direction normal to the direction of the two scintillator backscattered electron (BSE) detectors reported elsewhere. The free end tips of the wires are about 5 mm apart halfway between the specimen and the pressure limiting aperture (specimen distance = 1.5 mm). The other end of each wire makes contact with the input of a separate preamplifier, two of which are built inside a shielding aluminum stub. With such a design, interference noise from the input cables is avoided.

Cristal-growth dynamics of n-doped gaAs

1992 ◽  
Vol 50 (2) ◽  
pp. 1544-1545
Author(s):  
Pham V. Huong ◽  
Stéphanie Bouchet ◽  
Jean-Claude Launay
Keyword(s):  
Crystal Growth ◽  
Spatial Resolution ◽  
Epitaxial Layer ◽  
Outer Surface ◽  
Gaas Substrate ◽  
Structural Modification ◽  
Growth Dynamics ◽  
Argon Laser ◽  
High Anisotropy ◽  
Crystal Gaas

Microstructure of epitaxial layers of doped GaAs and its crystal growth dynamics on single crystal GaAs substrate were studied by Raman microspectroscopy with a Dilor OMARS instrument equipped with a 1024 photodiode multichannel detector and a ion-argon laser Spectra-Physics emitting at 514.5 nm.The spatial resolution of this technique, less than 1 μm2, allows the recording of Raman spectra at several spots in function of thickness, from the substrate to the outer deposit, including areas around the interface (Fig.l).The high anisotropy of the LO and TO Raman bands is indicative of the orientation of the epitaxial layer as well as of the structural modification in the deposit and in the substrate at the interface.With Sn doped, the epitaxial layer also presents plasmon in Raman scattering. This fact is already very well known, but we additionally observed that its frequency increases with the thickness of the deposit. For a sample with electron density 1020 cm-3, the plasmon L+ appears at 930 and 790 cm-1 near the outer surface.

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