Fabrication of Silicon Carbide PIN Diodes by Laser Doping and Planar Edge Termination by Laser Metallization

2005 ◽  
Vol 864 ◽  
Author(s):  
Z. Tian ◽  
N.R. Quick ◽  
A. Kar
Keyword(s):  
Silicon Carbide ◽  
Leakage Current ◽  
Rutherford Backscattering ◽  
High Resistivity ◽  
Direct Write ◽  
Pin Diodes ◽  
Laser Doping ◽  
Edge Termination ◽  
P Type ◽  
Conventional Annealing

AbstractSilicon carbide PIN diodes have been fabricated using a direct write laser doping and metallization technique. Trimethyaluminum (TMA) and nitrogen are precursors used to laser dope p-type and n-type regions, respectively, and μ4.3 mm p-type doped junction and 4 mm ntype doped junction are fabricated in semi-insulating 6H-SiC wafers. Rutherford backscattering studies show that no amorphization occurred during the laser doping process. A planar edge termination is fabricated by laser metallization in argon ambient to form a high resistivity layer. With this termination, the leakage current of the PIN diodes can be suppressed effectively compared to that of diodes without edge termination. The performance of the diodes can also be tailored by shrinking the active area of the diode and by conventional annealing.

scholarly journals 10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

Energies ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 4566 ◽  
Author(s):  
Asllani ◽  
Morel ◽  
Phung ◽  
Planson
Keyword(s):  
Silicon Carbide ◽  
Leakage Current ◽  
Voltage Drop ◽  
Forward Bias ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Pulse Switching ◽  
Turn On ◽  
Forward Voltage Drop ◽  
Fabrication And Characterization

This paper presents the design, fabrication and characterization results obtained on the last generation (third run) of SiC 10 kV PiN diodes from SuperGrid Institute. In forward bias, the 59 mm2 diodes were tested up to 100 A. These devices withstand voltages up to 12 kV on wafer (before dicing, packaging) and show a low forward voltage drop at 80 A. The influence of the temperature from 25 °C to 125 °C has been assessed and shows that resistivity modulation occurs in the whole temperature range. Leakage current at 3 kV increases with temperature, while being three orders of magnitude lower than those of equivalent Si diodes. Double-pulse switching tests reveal the 10 kV SiC PiN diode’s outstanding performance. Turn-on dV/dt and di/dt are −32 V/ns and 311 A/µs, respectively, whereas turn-off dV/dt and di/dt are 474 V/ns and −4.2 A/ns.

Laser Direct Write and Gas Immersion Laser Doping Fabrication of SiC Diodes

2004 ◽  
Vol 815 ◽  
Author(s):  
Z. Tian ◽  
N.R. Quick ◽  
A. Kar
Keyword(s):  
Ohmic Contacts ◽  
Wafer Surface ◽  
Direct Write ◽  
Laser Doping ◽  
Sensing Applications ◽  
P Type ◽  
Sic Wafer ◽  
Laser Direct Write ◽  
Defect Densities

AbstractLaboratory prototype SiC diodes are fabricated using a combination of gas immersion laser doping (GILD) and laser direct write (LDW) in situ metallization in a commercial SiC wafer. Trimethylaluminum (TMA) and nitrogen are the precursors used to produce p-type and n-type SiC, respectively. Using these techniques, a 150 nm p-type doped junction is fabricated in semiinsulating 6H-SiC and n-doped 4H-SiC wafers. Ohmic contacts are created by laser direct metallization producing carbon rich conductive phases in these doped materials. Alternatively an excimer laser can be used to create silicon rich Schottky contacts. The geometry of the diodes can be vertical or planar to the wafer surface and the laser processes are thought to reduce defect densities in the irradiated areas. These laser-processed diodes are intended for use in high temperature, high voltage and high frequency switching and sensing applications.

Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging

2016 ◽  
Vol 858 ◽  
pp. 405-409 ◽  
Author(s):  
Yeganeh Bonyadi ◽  
Peter M. Gammon ◽  
Roozbeh Bonyadi ◽  
Vishal Ajit Shah ◽  
C.A. Fisher ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electrical Characteristics ◽  
Pin Diodes ◽  
Turn On ◽  
State Behaviour ◽  
P Type ◽  
Soft Breakdown ◽  
Current Behaviour

In this paper the results of a study in which the surface quality of 30, 35 and 110 µm 4H-SiC epitaxial layers from different manufacturers are evaluated using AFM and photoluminescence (PL) imaging. PiN diodes are then intentionally fabricated on triangular defects and polytypes grains which are formed, in order to understand their impact on the resulting electrical characteristics, which includes on-state behaviour, turn-on characteristics and reverse leakage current behaviour. The results indicate that the defects form a high resistance short through the p-type anode. This results in higher leakage current, well over 108 times higher than the devices formed off-defect. PiN diodes fabricated on-defect also suffered from soft breakdown unlike those off-defect.

Characteristics of 6H-silicon carbide PIN diodes prototyping by laser doping

2005 ◽  
Vol 34 (4) ◽  
pp. 430-438 ◽  
Author(s):  
Z. Tian ◽  
N. R. Quick ◽  
A. Kar
Keyword(s):  
Silicon Carbide ◽  
Pin Diodes ◽  
Laser Doping

Scandium And Gallium Implantation Doping Of Silicon Carbide

1998 ◽  
Vol 512 ◽  
Author(s):  
T. Henkel ◽  
Y. Tanaka ◽  
N. Kobayashi ◽  
I. Koutzarov ◽  
H. Okumura ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Crystal Lattice ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Rutherford Backscattering ◽  
High Resistivity ◽  
Hall Measurements ◽  
Doping Behaviour

ABSTRACTRutherford backscattering, Raman spectroscopy as well as photoluminescence, resistivity and Hall measurements have been used to investigate the doping behaviour of Scandium and Gallium ions implanted into Silicon Carbide respectively. The recovery of the crystal lattice after implantation at room temperature followed by rapid thermal annealing is shown to be less effective in the case of Scandium compared with Gallium. Scandium implanted SiC exhibited a high resistivity in comparison to Gallium implanted crystals.

Grayscale Junction Termination for High-Voltage SiC Devices

2009 ◽  
Vol 615-617 ◽  
pp. 691-694 ◽  
Author(s):  
Eugene A. Imhoff ◽  
Fritz J. Kub ◽  
Karl D. Hobart
Keyword(s):  
Silicon Carbide ◽  
High Resolution ◽  
High Voltage ◽  
Doping Profile ◽  
Guard Ring ◽  
Field Profile ◽  
High Voltage Electrode ◽  
Simple Method ◽  
Pin Diodes ◽  
Edge Termination

In silicon carbide devices used above around 2.4 kV, effective anode edge termination usually requires a high-resolution floating guard ring implant or multiple lithography/implant cycles to effect a multi-zone junction termination extension. In general the goal is to produce a smoothly tapered field profile to prevent high-voltage field-crowding that causes premature breakdown at the edge of the high voltage electrode. Using a much simpler grayscale photolithographic technique and a single termination implant, we directly produce the desired tapered doping profile. The effectiveness of this termination is shown by the near-ideal (6.1 kV) breakdown measured in PiN diodes made with a 38 µm intrinsic layer. The simple method is applicable to the fabrication of many high-voltage devices.

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

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