Determination of Diffusivities of Si Self-Diffusion and Si Self-Interstitials using Isotopically Enriched Single-or Multi-30Si Epitaxial Layers

2005 ◽  
Vol 864 ◽  
Author(s):  
S. Matsumoto ◽  
S.R. Aid ◽  
T. Sakaguchi ◽  
K. Toyonaga ◽  
Y. Nakabayashi ◽  
...  
Keyword(s):  
Thermal Equilibrium ◽  
Equilibrium Concentration ◽  
Sample Surface ◽  
Temperature Range ◽  
Self Diffusion ◽  
Si Substrates ◽  
Numerical Fitting ◽  
Si Isotopes ◽  
Secondary Ion

AbstractSelf-diffusivity of Si has been obtained over a wide temperature range (867°C-1300°C) using highly isotopically enriched 30Si epi-layers (99.88%) as a diffusion source into natural Si substrates. 30Si epi-layers were grown on both CZ-Si substrates and non-doped epi-layers grown on CZ-Si substrates using low pressure CVD with 30SiH4. Diffusion was performed in resistance-heated furnaces under a pure Ar atmosphere. After annealing, the concentrations of the respective Si isotopes were measured with secondary ion mass spectroscopy (SIMS). Diffusivity of 30Si (called Si self-diffusivity, DSD) was determined using a numerical fitting process with 30Si SIMS profiles. We found no major differences in self-diffusivity between bulk Si and epi-Si. Within the 867°C -1300°C range investigated, DSD can be described by an Arrhenius equation with one single activation enthalpy: DSD =14 exp (—4.37 eV/kT) cm2/s. The present result is in good agreement with that of Bracht et. al.Diffusivity and thermal equilibrium concentration of Si self-interstitials have been determined using multi-30Si epi-layers consisting of alternative layers with isotopically pure 30Si and natural Si. The sample surface was oxidized and the Si self-interstitials were introduced from the surface. Spreading of 30Si spikes of each layer due to the diffusion of Si self-interstitials generated at the surface was measured with SIMS analysis. The diffusivity of Si self-interstitials, DI, is obtained by fitting with experimental results. In the temperature range between 820 -920°C, DI and thermal equilibrium concentration of Si self-interstitials, CIi, are described by the Arrhenius equations DI3.48×104 exp (—3.82eV/KT) cm2/s and CIi= 9.62×1018 exp (—0.475eV/KT) cm-3, respectively.

Intrinsic Point Defects and Diffusion Processes in Silicon

1983 ◽  
Vol 31 ◽  
Author(s):  
T. Y. Tan
Keyword(s):  
Point Defects ◽  
Thermal Equilibrium ◽  
Diffusion Processes ◽  
Equilibrium Concentration ◽  
Surface Oxidation ◽  
Self Diffusion ◽  
Equilibrium Concentrations ◽  
And Diffusion

ABSTRACTThis paper reviews recent progress in understanding the role of vacancies (V) and self-interstitials (I) in self and impurity diffusion in Si. Surface oxidation perturbs the thermal equilibrium concentration of point defects and analyses of the resulting effects on dopant diffusion showed that both V and I are present. Developments in experimental and theoretical works on Au diffusion in Si yielded a determination of the I-component and an estimate of the V-component of the Si self-diffusion coefficient. It is hoped that the I and V thermal equilibrium concentrations may be determined in the near future.A number of important physical aspects of the anomalous diffusion of P are now understood but a basically satisfactory model may need further work.

Diffusion of ion-implanted Boron and Silicon in Germanium

2004 ◽  
Vol 809 ◽  
Author(s):  
Suresh Uppal ◽  
A. F. W. Willoughby ◽  
J. M. Bonar ◽  
N. E. B. cowern ◽  
R. J. H. Morris ◽  
...  
Keyword(s):  
Activation Energy ◽  
High Resolution ◽  
Diffusion Coefficients ◽  
Doping Concentration ◽  
Diffusion Mechanism ◽  
Concentration Profiles ◽  
Furnace Annealing ◽  
Temperature Range ◽  
Self Diffusion ◽  
Secondary Ion

ABSTRACTThe diffusion of B and Si in Ge is studied using implantation doping. Concentration profiles after furnace annealing in the temperature range 800–900 °C were obtained using high resolution secondary ion mass spectroscopy (SIMS). Diffusion coefficients are calculated by fitting the annealed profiles. For B, we obtain diRusivity values which are two orders of magnitude slower than previously reported in literature. An activation energy of 4.65(±0.3) eV is calculated for B diffusion in Ge. The results suggest that diffusion mechanism other than vacancy should be considered for B diffusion in Ge. For Si diffusion in Ge, the diffusivity values calculated in the temperature range 750–875 °C are in agreement with previous work. The activation energy of 3.2(±0.3) eV for Si diffusion is closer to that for Ge self-diffusion which suggests that Si diffusion in Ge occurs via the same mechanism as in Ge self-diffusion.

Ctivation Energies Of Interstitial Oxygen Diffusion In Silicon Containing Hydrogen

1996 ◽  
Vol 442 ◽  
Author(s):  
W. Wijaranakula
Keyword(s):  
Oxygen Diffusion ◽  
Thermal Equilibrium ◽  
Equilibrium Concentration ◽  
Activation Energies ◽  
Time Dependent ◽  
Rate Theory ◽  
Interstitial Oxygen ◽  
Hydrogen Saturation ◽  
Thermal Donor ◽  
Numerical Fitting

AbstractThe activation energies of interstitial oxygen diffusion in silicon containing hydrogen were derived from the results obtained from thermal donor generation experiments using numerical fitting based upon the classical nucleation rate theory and the time-dependent reduction of interstitial oxygen concentration resulting from oxygen aggregation. By using a new thermal equilibrium concentration of hydrogen at a pressure of 1 atm of 2×1021 exp(- 1.75 eV/kT), and the expression for the dependence of hydrogen thermal equilibrium concentration on the partial pressure P given as P0.65 times the hydrogen thermal equilibrium concentration at a pressure of 1 atm, the correlation between the activation energies of interstitial oxygen diffusion and hydrogen saturation is observed to be linearlogarithmic. In the hydrogen saturation range between 103 and 106, the activation energies of interstitial oxygen diffusion are estimated to be between 0.03 and 0.21 eV lower than the normal value of 2.53 eV. This implies that enhanced oxygen diffusion may occur primarily under hydrogen saturation conditions.

Thermal Equilibrium Concentrations and Effects of Ga Vacancies in n-TYPE GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
Teh Y. Tan ◽  
Homg-Ming You ◽  
Ulrich M. Gösele
Keyword(s):  
Temperature Dependence ◽  
Point Defect ◽  
Thermal Equilibrium ◽  
Quantitative Data ◽  
Equilibrium Concentration ◽  
Negative Temperature ◽  
Positive Temperature ◽  
Self Diffusion ◽  
N Doping ◽  
Equilibrium Concentrations

ABSTRACTWe have calculated the thermal equilibrium concentrations of the various Ga vacancy species in GaAs. That of the triply-negatively-charged Ga vacancy, V3Ga has been emphasized, since it dominates Ga self-diffusion and Ga-Al interdiffusion under intrinsic and ndoping conditions, as well as the diffusion of Si donor atoms occupying Ga sites. Under strong n-doping conditions, the thermal equilibrium V3Ga concentration, CeqvGa.3−(n), has been found to exhibit a temperature independence or a negative temperature dependence, in the sense that the CeqvGa.3−(n) value is either unchanged or increases as the temperature is lowered. This is contrary to the normal positive temperature dependence of point defect theerqmal equilibrium concentrations, which decreases as the temperature is lowered. This CeqvGa.3−(n) property provides explanations to a number of outstanding experimental results, either requiring the interpretation thatV3−Ga has attained its thermal equilibrium concentration at the onset of each experiment, or requiring mechanisms involving point defect non-equilibrium phenomena. Furthermore, there exist also a few quantitative data which are in agreement with the presently calculated results.

Determination of Ga Self-Diffusion Coefficient in GaAs

1991 ◽  
Vol 240 ◽  
Author(s):  
T. Y. Tan ◽  
S. Yu ◽  
U. Gösele
Keyword(s):  
Diffusion Coefficient ◽  
Quantitative Determination ◽  
Thermal Equilibrium ◽  
Activation Enthalpy ◽  
Self Diffusion ◽  
Self Diffusion Coefficient ◽  
Positively Charged

ABSTRACTA quantitative determination of the contributions of the triply-negatively charged Ga vacancies and of the doubly-positively charged Ga self-interstitials to Ga self-diffusion coefficient in GaAs has been carried out. Unde thermal equilibrium and intrinsic conditions, the contribution is characterized by an activation enthalpy of 6 eV for As-rich crystals and of 7.52 eV for Ga-rich crystals, while the contribution is characterized by an activation enthalpy of 4.89 eV for As-rich crystals and of 3.37 eV for Ga-rich crystals.

Determination of Diffusion Coefficient of Cation Vacancies in Nickel Oxide

1969 ◽  
Vol 24 (3) ◽  
pp. 441-443 ◽  
Author(s):  
Romano Morlotti
Keyword(s):  
Electrical Conductivity ◽  
Diffusion Coefficient ◽  
Nickel Oxide ◽  
Equilibrium Concentration ◽  
The Self ◽  
Self Diffusion ◽  
Partial Pressures ◽  
Self Diffusion Coefficient ◽  
Good Agreement

AbstractPolycrystalline NiO samples were equilibrated with different oxygen partial pressures from 10-3 to 1 Atm in the temperature range 750 °C -1000 °C. Transient electrical conductivity was measured until a new equilibrium was attained after changing the oxygen partial pressure. By the time dependence of the electrical conductivity in isothermal conditions the diffusion coefficient of nickel vacancies was determined. Using the pertinent value for the vacancies equilibrium concentration, the self-diffusion coefficient of nickel in nickel oxide was obtained in good agreement with literature data.

Self-Diffusion in Covalent Amorphous Solids – A Comparative Study Using Neutron Reflectometry and SIMS

2007 ◽  
Vol 263 ◽  
pp. 51-56 ◽  
Author(s):  
Harald Schmidt ◽  
Mukul Gupta ◽  
Udo Geckle ◽  
Michael Bruns
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Diffusion Length ◽  
Diffusion Processes ◽  
Amorphous Solid ◽  
Amorphous Solids ◽  
Neutron Reflectometry ◽  
Amorphous Silicon Nitride ◽  
Self Diffusion ◽  
Secondary Ion

The self-diffusion of nitrogen is studied in amorphous silicon nitride, which is a model system for a covalently bound amorphous solid with a low atomic mobility where reliable diffusion data are still lacking. Comparative experiments on Si14Nx/Si15Nx (x ≈ 1.33) isotope multilayers were carried out with secondary ion mass spectrometry (SIMS) and neutron reflectometry (NR), respectively. It was found that experiments with SIMS are not very well suited for the determination of diffusivities in a broad temperature range. The minimum diffusion length of about 5-10 nm detectable with this method is too large. At high temperatures (> 1200 °C) the amorphous solid crystallizes before any diffusion is measured and at low temperatures (< 1100 °C) the diffusivities are too low to be detected. In contrast, with neutron reflectometry diffusion lengths in the order of 1 nm and diffusivities down to 10-24 m2 s-1 were measured between 950 and 1250 °C. The potential of this method for the determination of ultra slow diffusion processes is discussed.

Lithium Tracer Diffusion in Sub-Stoichiometric Layered Lithium-Metal-Oxide Compounds

2021 ◽  
Vol 413 ◽  
pp. 125-135
Author(s):  
Daniel Uxa ◽  
Helen J. Holmes ◽  
Kevin Meyer ◽  
Lars Dörrer ◽  
Harald Schmidt
Keyword(s):  
Metal Oxide ◽  
Cathode Materials ◽  
Secondary Ion Mass Spectrometry ◽  
Lithium Ion ◽  
Tracer Diffusion ◽  
Lithium Metal ◽  
Temperature Range ◽  
Self Diffusion ◽  
Lithium Diffusion ◽  
Secondary Ion

Cathode materials based on lithium-metal-oxide compounds are an essential technical component for lithium-ion batteries, which are still being researched and continuously improved. For a fundamental understanding of kinetic processes at and in electrodes the Li diffusion is of high relevance. Most cathode materials are based on the layered LiCoO2 (LCO) and LiNi0.33Mn0.33Co0.33O2 (NMC333). In the present study Li tracer self-diffusion is investigated in polycrystalline sintered bulk samples of sub-stoichiometric Li0.9CoO2 at 145 °C ≤ T ≤ 350 °C and compared to Li0.9Ni0.33Mn0.33Co0.33O2 in the temperature range between 110 and 350 °C. For analysis, stable 6Li tracers are used in combination with secondary ion mass spectrometry (SIMS). The Li tracer diffusivities D* of both compounds with a sub-stoichiometric Li concentration are identical within error limits and can be described by the Arrhenius law with an activation enthalpy of (0.76 ± 0.13) eV for LCO and (0.85 ± 0.03) eV for NMC333, which is interpreted as the migration energy of a single Li vacancy. This means that a modification of the transition metal (M) layer composition within the LiMO2 structure does not significantly influence lithium diffusion in the temperature range investigated.

Disordering and Characterization Studies of 69GaAs/71GaAs Isotope Superlattice Structures: The Effect of Outdiffusion of the Substrate Dopant Si

1992 ◽  
Vol 262 ◽  
Author(s):  
T. Y. Tan ◽  
H. M. You ◽  
S. Yu ◽  
U. M. Gitesele ◽  
W. Jäger ◽  
...  
Keyword(s):  
Thermal Equilibrium ◽  
Activation Enthalpy ◽  
N Value ◽  
Temperature Range ◽  
Self Diffusion ◽  
Gaas Substrates ◽  
Characterization Studies ◽  
Superlattice Structures ◽  
Cv Measurements ◽  
P Type

ABSTRACTUndoped 69GaAs/71GaAs isotope superlattice structures grown by MBE on n-type GaAs substrates, doped by Si to ∼3×1018 cm−3, have been used to study Ga self-diffusion in GaAs by disordering reactions. In the temperature range of 850–960°C, the SIMS measured Ga self-diffusivity values showed an activation enthalpy of 4 eV, and are larger than previously compiled Ga self-diffusivity and Al-Ga interdiffusivity values obtained under thermal equilibrium and intrinsic conditions, which are characterized by a 6 eV activation enthalpy. SIMS, CV, and TEM characterizations showed that the as-grown superlattice layers were intrinsic which became p-type with hole concentrations up to ∼2×1017 cm−3 after annealing, because the layers contain carbon. Dislocations of a density of ∼106-107 cm−2 were also present. However, the factor responsible for the presently observed larger Ga self-diffusivity values appears to be Si outdiffusion from the substrate, which was determined using CV measurements. Outdiffusion of Si decreases the n value in the substrate which causes the release of excess Ga vacancies into the superlattice layers where the supersaturated Ga vacancies enhance Ga self-diffusion.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

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