Determination of Ga Self-Diffusion Coefficient in GaAs
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ABSTRACTA quantitative determination of the contributions of the triply-negatively charged Ga vacancies and of the doubly-positively charged Ga self-interstitials to Ga self-diffusion coefficient in GaAs has been carried out. Unde thermal equilibrium and intrinsic conditions, the contribution is characterized by an activation enthalpy of 6 eV for As-rich crystals and of 7.52 eV for Ga-rich crystals, while the contribution is characterized by an activation enthalpy of 4.89 eV for As-rich crystals and of 3.37 eV for Ga-rich crystals.
1993 ◽
Vol 160
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pp. 117-126
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1980 ◽
Vol 17
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pp. 269-274
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2013 ◽
Vol 12
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pp. 1350051
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1969 ◽
Vol 24
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pp. 441-443
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