Electrical Transient Based Defect Spectroscopy in Polymeric and Organic Semiconductors

2005 ◽  
Vol 864 ◽  
Author(s):  
Y.N. Mohapatra ◽  
V. Varshney ◽  
V. Rao ◽  
Samarendra P. Singh ◽  
G.S. Samal

AbstractThe relation between electrically active defects in organic and polymeric semiconductor materials and degradation of devices such as loss of luminance is currently not understood. In this paper, we study defect related charge processes using electrical transients in polymeric and organic diodes. We monitor slow charging and discharging currents as a function of time for both virgin and electrically aged devices. The current transients are analyzed spectroscopically in time domain using a technique called Time Analyzed Transient Spectroscopy, which is similar to DLTS in its implementation. We observe highly stretched exponentials over 3—4 orders of magnitude in time up to thousands of seconds indicating existence of large distribution in time constants in aged PLED devices. We demonstrate ability to distinguish between different mechanisms of charge storage related to defect related processes in typical OLED and PLED.

2004 ◽  
Vol 814 ◽  
Author(s):  
David J. Brennan ◽  
Yu Chen ◽  
Shaoguang Feng ◽  
James P. Godschalx ◽  
Gary E. Spilman ◽  
...  

AbstractNew poly(fluorene-thiophene) alternating copolymers are described in which either the dioctylfluorene or bithiophene units in poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) are replaced by other fluorene or thiophene-based groups, respectively. Improvements in solubility are realized when the bithiophene unit of F8T2 is replaced by dihexylterthiophene or dihexylpentathiophene units. Melting temperatures are also lowered by 50 – 100°C in these polymers when compared to F8T2. Replacement of the bithiophene unit of F8T2 with a dihexylpentathiophene unit also results in a significant improvement in hysteresis (< 2 V vs. 3.5 – 5 V for F8T2). Initial results are also reported on the thermal cleavage of the C8 side groups of F8T2, which yields an insoluble polymeric semiconductor film that continues to exhibit transistor switching characteristics as part of a bottom gate device.


2007 ◽  
Vol 4 (1) ◽  
pp. 51-69 ◽  
Author(s):  
M. Hasni ◽  
S. Djema ◽  
O. Touhami ◽  
R. Ibtiouen ◽  
M. Fadel ◽  
...  

This paper presents the results of a frequency and time-domain identification procedure to estimate the linear parameters of a salient-pole synchronous machine at standstill. The objective of this study is to use several input signals to identify the model structure and parameters of a salient-pole synchronous machine from standstill test data. The procedure consists to define, to conduct the standstill tests and also to identify the model structure. The signals used for identification are the different excitation voltages at standstill and the flowing current in different windings. We estimate the parameters of operational impedances, or in other words the reactance and the time constants. The tests were carried out on synchronous machine of 1.5 kVA 380V 1500 rpm.


1992 ◽  
Vol 68 (4) ◽  
pp. 1438-1452 ◽  
Author(s):  
W. R. Holmes ◽  
W. Rall

1. A procedure based on compartmental modeling called the "constrained inverse computation" was developed for estimating the electrotonic structure of neurons. With the constrained inverse computation, a set of N electrotonic parameters are estimated iteratively with use of a Newton-Raphson algorithm given values of N parameters that can be measured or estimated from experimental data. 2. The constrained inverse computation is illustrated by several applications to the basic example of a neuron represented as one cylinder coupled to a soma. The number of unknown parameters estimated was different (ranging from 2 to 6) when different sets of constraints were chosen. The unknowns were chosen from the following: dendritic membrane resistivity Rmd, soma membrane resistivity Rms, intracellular resistivity Ri, membrane capacity Cm, dendritic membrane area AD, soma membrane area As, electrotonic length L, and resistivity-free length, rfl (rfl = 2l/d1/2 where l and d are length and diameter of the cylinder). The values of the unknown parameters were estimated from the values of an equal number of known parameters, which were chosen from the following: the time constants and coefficients of a voltage transient tau 0, tau 1, ..., C0, C1, ..., voltage-clamp time constants tau vc1, tau vc2, ..., and input resistance RN. Note that initially, morphological data were treated as unknown, rather than known. 3. When complete morphology was not known, parameters from voltage and current transients, combined with the input resistance were not sufficient to completely specify the electrotonic structure of the neuron. For a neuron represented as a cylinder coupled to a soma, there were an infinite number of combinations of Rmd, Rms, Ri, Cm, AS, AD, and L that could be fitted to the same voltage and current transients and input resistance. 4. One reason for the nonuniqueness when complete morphology was not specified is that the Ri estimate is intrinsically bound to the morphology. Ri enters the inverse computation only in the calculation of the electrotonic length of a compartment. The electrotonic length of a compartment is l[4 Ri/(dRmd)]1/2, where l and d are the length and diameter of the compartment. Without complete morphology, the inverse computation cannot distinguish between a change in d or l and a change in Ri. Even when morphology is known, the accuracy of the Ri estimate obtained by any fitting procedure is affected by systematic errors in length and diameter measurements (i.e., tissue shrinkage); the Ri estimate is inversely proportional to the length measurement and proportional to the square root of the diameter measurement.(ABSTRACT TRUNCATED AT 400 WORDS)


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