A Pulsed EDMR Study of Charge Trapping at Pb Centers

2005 ◽  
Vol 864 ◽  
Author(s):  
Christoph Boehme ◽  
Felice Friedrich ◽  
Klaus Lips

AbstractLow temperature pulsed electrically detected magnetic resonance (pEDMR) measurements of charge trapping and recombination transitions involving Pb centers at the c-Si (111)/SiO2 interface are presented. The results of these experiments show that when a conduction electron is trapped, it forms a strongly coupled spin pair with the defect electron prior to its readjustment into the charged Pb ground state. The data reveals that the Landé factors of the two electrons within these pairs are almost identical (difference < 0.002) and that they are, within the measurement accuracy, identical to the Landé factor of the uncharged, singly occupied Pb center. From this, it is concluded that trapping and recombination at Pb defects is dominated by direct charge capture and not by tunneling or hopping transitions from other localized states. Different cross sections attributed in previous studies to different interface defects at the c-Si/SiO2 interface can be explained by readjustment out of different spin configurations of the charged Pb-* defect.

2014 ◽  
Vol 778-780 ◽  
pp. 414-417 ◽  
Author(s):  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Ryo Arai ◽  
Yoshihiro Satoh ◽  
Ryouji Kosugi ◽  
...  

This paper reports an EDMR (electrically detected magnetic resonance) observation on 4H-SiC(000-1) “C face” MOSFETs. We found a new strong EDMR signal in wet-oxidized C-face 4H-SiC MOSFETs, which originates from intrinsic interface defects on C-face SiC-SiO2 structures.


2009 ◽  
Vol 2009 ◽  
pp. 1-5 ◽  
Author(s):  
Satyabrata Sahoo ◽  
Y. K. Ho

The plasma screening effect is found to uncover a Cooper minimum in the photoionization cross sections from the ground state of the Li atom embedded in Debye plasma environment. The variation of the location of this minimum with Debye screening length is discussed and analyzed in terms of the instability of the ground state.


1985 ◽  
Vol 63 (3) ◽  
pp. 417-427 ◽  
Author(s):  
Ashok Kumar ◽  
William J. Meath

Dipole oscillator strength distributions have been constructed and used to evaluate integrated oscillator strengths, and a variety of dipole oscillator strength properties, for ground state SO2, CS2, and OCS. Each distribution has been constructed by using experimental and theoretical photoabsorption cross sections and by subjecting the resulting dipole oscillator strength data to constraints provided by the Thomas–Reiche–Kuhn sum rule and molar refractivity data for the relevant dilute gases. The discussion includes graphical presentations of how various spectral regions of the dipole oscillator strength distributions contribute to the more important dipole properties.


2019 ◽  
Vol 64 (9) ◽  
pp. 787
Author(s):  
S. N. Afanasyev

The method of diffusion chamber in the magnetic field making use of a bremsstrahlung beam with a maximum photon energy of 150 MeV is applied to study the 12C(y,3a) and 16O(y,4a) reactions. A resonance identified as the ground state of 8Be nucleus is found in the distribution of events over the energy of the relative motion of two a-particles. The partial cross-sections of the 8Be nucleus formation channels are measured. It is shown that the mechanism of interaction between a y-quantum and a virtual a-particle pair takes place in this case.


2000 ◽  
Vol 98 (4) ◽  
pp. 353-361 ◽  
Author(s):  
M. Głódź ◽  
A. Huzandrov ◽  
J. Klavins ◽  
I. Sydoryk ◽  
J. Szonert ◽  
...  
Keyword(s):  

2020 ◽  
Vol 27 ◽  
pp. 160
Author(s):  
Efstathia Georgali ◽  
N. Patronis ◽  
A. Anastasiadis ◽  
M. Axiotis ◽  
Z. Eleme ◽  
...  

The present work concerns the preliminary analysis for the study of the (n,2n) reaction channel of the 165Ho isotope at near threshold energies: 10.1, 10.4 and 10.7 MeV (Eth=8.04 MeV). The cross sections for the population of both the ground state (Jπ=1+) and the isomeric state (Jπ=6-, Eex=139.8 keV) of the 164Ho product-nucleus were measured at the afore mentioned energies via the activation technique relative to the 27Al(n,α)24Na and 197Au(n,2n)196Au reactions. The quasi-monoenergetic neutron beams were produced through the 2H(d,n)3He reaction in the 5.5 MV Tandem Van de Graaf accelerator of N.C.S.R ''Demokritos''. The preliminary experimental results are compared with theoretical predictions based on TALYS code.


1986 ◽  
Vol 39 (5) ◽  
pp. 779 ◽  
Author(s):  
WJ van der Meer ◽  
RJ Butselaar ◽  
CA de Lange

A recently developed modulation method is used to obtain cross sections for the photoionisation of ground state neutral to ground state ionic, atomic and molecular chlorine relative to that of the HCl + (X2n 1IZ,3IZ) +-- HCl(XI ~ +) transition at the He Ia wavelength. With the known absolute cross section of the latter process, determined by (e,2e) coincidence spectroscopy, the present ell,periments provide absolute photoionisation cross sections of the CI + epz,l,o) +-- Clep) and Cli (XZ n g, 1IZ,3 IZ) +-- Clz (X I ~ t) transitions. Relative cross sections, previously determined for the transitions to the additional Cl and Clz ionic states accessible with He Ia radiation, are used to obtain absolute cross sections for the Cl+(IDz, ISO) +-- Clep) and Cli(AZnu,1IZ,3IZ, BZ~t) +-- Clz(XI~t) ionisation processes.


1975 ◽  
Vol 53 (19) ◽  
pp. 1845-1852 ◽  
Author(s):  
S. Ogawa ◽  
M. Ogawa

An attempt has been made to measure the absorption cross sections of O2 in the metastable state a1Δg from 1087 to 1700 Å. The absorption is measurable (σa ≥ 3 × 10−19 cm2) from around 1500 Å towards shorter wavelengths. Many band structures overlaying various continua have been seen. Absorption cross sections of O2 in the ground state X3Σg− also have been measured in the same wavelength region and our results agree with previously published values within experimental error. The cross sections of O2(a1Δg) are generally larger than those of O2(X3Σg−) below 1290 Å except at the wavelengths of a few strong bands of O2(X3Σg−).


1986 ◽  
Vol 70 ◽  
Author(s):  
Jože Furlan ◽  
Slavko Amon

ABSTRACTA general expression for generation-recombination rate in a-Si based on classical SRH theory including different electron and hole capture cross-sections for donor-like and acceptor-like centers inside the mobility gap is derived. Applying appropriate approximations and two-exponential model for localized states distribution two methods of analytical solution are presented and discussed.


1983 ◽  
Vol 74 (1) ◽  
pp. 17-27 ◽  
Author(s):  
S. A. S. Vitiello ◽  
I. D. Goldman
Keyword(s):  

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