Oxygen related shallow acceptor in GaN

2004 ◽  
Vol 831 ◽  
Author(s):  
B. Monemar ◽  
P. P. Paskov ◽  
F. Tuomisto ◽  
K. Saarinen ◽  
M. Iwaya ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Epitaxial Layers ◽  
Photoluminescence Spectra ◽  
Acceptor Pair ◽  
Shallow Acceptor ◽  
General Correlation ◽  
Mocvd Growth ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTWe report on deliberate O doping of GaN epitaxial layers during MOCVD growth, using H2O and CO2 as precursors. The photoluminescence spectra show a dominant 3.27 eV emission at 2 K known to be a donor-acceptor pair (DAP) transition. In our samples the intensity of this DAP spectrum correlates with the commonly observed 3.466 eV acceptor bound exciton (ABE) peak, suggesting these spectra are related to the same acceptor. The general correlation of these acceptor spectra with O concentration (as established with SIMS data) suggest that the acceptor is O-related, most likely a VGa-O complex. The concentration was measured with positron annihilation spectroscopy and found to be in the 1016 cm−3 -1017 cm−3 range in different samples. Considering previous results the identity of this residual acceptor is suggested to be a VGa-O-H complex. Previous suggestions that this acceptor is related to Mg, Si or C are discussed and found to be less likely.

CuIn1-xGaxSe2 Thin Films Prepared by Co-Evaporation Technique

2013 ◽  
Vol 827 ◽  
pp. 12-15
Author(s):  
Ya Fen Wu ◽  
Jiunn Chyi Lee
Keyword(s):  
Thin Films ◽  
Energy Levels ◽  
Luminescence Spectra ◽  
Photoluminescence Spectra ◽  
Acceptor Pair ◽  
Shallow Acceptor ◽  
Donor Acceptor ◽  
Evaporation Technique ◽  
Donor Acceptor Pair ◽  
Gallium Content

The optical properties of Cu-poor CuIn1-xGaxSe2 thin films with different gallium contents grown by co-evaporated technique were studied. Measurements of photoluminescence and photoreflectance were performed on the samples. The photoluminescence and photoreflectance emission peaks observed around 1.1 eV are attributed to donor-acceptor pair luminescence. These donor-acceptor pair emissions are considered to originate from relatively shallow acceptor and donor energy levels. With increasing gallium content, the emission peaks shift towards higher levels of photon energy, and the linewidths of the luminescence spectra for the samples become wider, which we attributes to the greater statistical disorder between indium and gallium. Moreover, the conversion efficiency of the CuIn1-xGaxSe2-based solar cells is obtained. The measured results coincide with the inference given by the photoluminescence spectra.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

Donor–acceptor pair photoluminescence spectra analysis in CdTe:Ag

2003 ◽  
Vol 94 (4) ◽  
pp. 2284-2288 ◽  
Author(s):  
O. Zelaya-Angel ◽  
M. Garcia-Rocha ◽  
J. G. Mendoza-Alvarez ◽  
M. Cardenas ◽  
J. Aguilar-Hernandez
Keyword(s):  
Photoluminescence Spectra ◽  
Acceptor Pair ◽  
Spectra Analysis ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Zn-Related Donor-Acceptor Pair Emission in $\bf CuAlSe_{2}$ Epitaxial Layers

1994 ◽  
Vol 33 (Part 2, No. 3A) ◽  
pp. L345-L347 ◽  
Author(s):  
Sho Shirakata ◽  
Shigefusa Chichibu ◽  
Satoru Matsumoto ◽  
Shigehiro Isomura
Keyword(s):  
Epitaxial Layers ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Related Donor ◽  
Donor Acceptor Pair

Optically Detected Magnetic Resonance of Donors in AlxGa1−x as with High AlAs Fraction

1987 ◽  
Vol 104 ◽  
Author(s):  
T. A. Kennedy ◽  
R. Magno ◽  
E. Glaser ◽  
M. G. Spencer
Keyword(s):  
Magnetic Resonance ◽  
Acceptor Pair ◽  
High Quality ◽  
Shallow Acceptor ◽  
Optically Detected Magnetic Resonance ◽  
Donor Acceptor ◽  
Optical And Magnetic Properties ◽  
Donor Acceptor Pair ◽  
Optically Detected ◽  
High Quality Sample

ABSTRACTOptical and magnetic properties of donors in high AlAs-fraction AlxGa1−x As have been determined using optically-detected magnetic resonance. Many samples exhibit a sharp resonance at g = 1.95 detected on midgap luminescence. One high-quality sample exhibits an exhange-broadened line which reveals a distribution in donor-acceptor pair separations on moderately deep emission. A second high-quality sample exhibits the donor ODMR on donor-to-shallow- acceptor photoluminescence.

Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers

1995 ◽  
Vol 378 ◽  
Author(s):  
B. K. Meyer ◽  
D. Volm ◽  
C. Wetzel ◽  
L. Eckey ◽  
J.-Ch. Holst ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Photoluminescence Spectroscopy ◽  
Epitaxial Layers ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Sapphire Substrates ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Time Resolved Photoluminescence

AbstractFree and bound exciton luminescences as well as donor-acceptor pair recombination of GaN epitaxial layers on 6H-SiC and sapphire substrates were investigated using time integrated and time resolved photoluminescence measurements at low temperatures. Lifetimes are determined for the donor bound exciton at 3.4722eV and for two acceptor bound excitons with energies of 3.4672eV and 3.459eV. Luminescences between 3.29eV and 3.37eV are identified as due to excitons deeply bound to centers located near the substrate-epilayer interface.

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

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