Mechanisms of Raman Scattering in doped Indium Nitride
Keyword(s):
ABSTRACTHighly n-doped InN layers are investigated by means of Raman scattering: a strong mode is evidenced near the frequency of the A1(LO) phonon, despite the high conductivity of the films. This observation is interpreted assuming the breakdown of the wave-vector conservation leading to the decoupling of the plasmon from the phonon. The lineshape of the longitudinal optical mode is simulated using the Lindhard-Mermin dielectric function for various light scattering processes: we found that the charge density fluctuation mechanism is dominant, at least in the visible excitation range.
2002 ◽
Vol 316-317
◽
pp. 413-416
◽
Keyword(s):
1971 ◽
Vol 32
(10)
◽
pp. 2403-2407
◽
1973 ◽
Vol 21
(2)
◽
pp. 349-353
◽
Keyword(s):
Keyword(s):
Keyword(s):
1989 ◽
pp. 347-356
◽
Keyword(s):
2021 ◽