Observation of symmetrically decay of A1(longitudinal optical) mode in free-standing GaN bulk single crystal from Li3N flux method

2013 ◽  
Vol 102 (1) ◽  
pp. 011916 ◽  
Author(s):  
X. H. Zhang ◽  
C. L. Zhao ◽  
J. C. Han ◽  
Y. Wang ◽  
J. K. Jian ◽  
...  
Keyword(s):  
Single Crystal ◽  
Longitudinal Optical ◽  
Bulk Single Crystal ◽  
Optical Mode ◽  
Flux Method ◽  
Free Standing ◽  
Longitudinal Optical Mode

Experimental detection of collective modes In a polar liquid: application to the case of the solvated electron in H2O and NH3

1977 ◽  
Vol 55 (11) ◽  
pp. 1916-1919 ◽  
Author(s):  
Gianni Ascarelli
Keyword(s):  
Ionic Crystal ◽  
Collective Mode ◽  
Continuum Theory ◽  
Longitudinal Optical ◽  
Collective Modes ◽  
Coupling Constant ◽  
Optical Mode ◽  
Solvated Electron ◽  
Low Frequencies ◽  
Longitudinal Optical Mode

We present experimental data that confirm the predicted existence of a collective mode in a liquid corresponding to the longitudinal optical mode in an ionic crystal. The experimental investigation was carried out in nitromethane, and the results bear out all the calculated properties of this collective mode: the dipolar plasmon. The calculated frequency of the dipolar plasmon, as well as the dielectric constant at high and low frequencies, are then used to calculate without adjustable parameters the polaron coupling constant of the solvated electron in NH3 and H2O. A comparison of the calculated and measured properties of the solvated electron indicates that in either case a polaron-like continuum theory can at most account for only a fraction of the energy of the observed optical absorption.

Redshift ofA1(longitudinal optical) mode for GaN crystals under strong electric field

2017 ◽  
Vol 11 (1) ◽  
pp. 011002 ◽  
Author(s):  
Hong Gu ◽  
Kaijie Wu ◽  
Shunan Zheng ◽  
Lin Shi ◽  
Min Zhang ◽  
...  
Keyword(s):  
Electric Field ◽  
Strong Electric Field ◽  
Longitudinal Optical ◽  
Optical Mode ◽  
Longitudinal Optical Mode

Mechanisms of Raman Scattering in doped Indium Nitride

2004 ◽  
Vol 831 ◽  
Author(s):  
Claire Pinquier ◽  
François Demangeot ◽  
Jean Frandon ◽  
Miguel Gaio ◽  
Olivier Briot ◽  
...  
Keyword(s):  
Light Scattering ◽  
Raman Scattering ◽  
Charge Density ◽  
Dielectric Function ◽  
Density Fluctuation ◽  
Indium Nitride ◽  
Longitudinal Optical ◽  
Optical Mode ◽  
Longitudinal Optical Mode ◽  
Strong Mode

ABSTRACTHighly n-doped InN layers are investigated by means of Raman scattering: a strong mode is evidenced near the frequency of the A1(LO) phonon, despite the high conductivity of the films. This observation is interpreted assuming the breakdown of the wave-vector conservation leading to the decoupling of the plasmon from the phonon. The lineshape of the longitudinal optical mode is simulated using the Lindhard-Mermin dielectric function for various light scattering processes: we found that the charge density fluctuation mechanism is dominant, at least in the visible excitation range.

Growth of Near-Free-Standing YBa2Cu3O7-Type Crystals Using a Self- Decanting Flux Method

1991 ◽  
Author(s):  
T. A. Vanderah ◽  
C. K. Lowe-Ma ◽  
D. E. Bliss ◽  
M. W. Decker ◽  
M. S. Osofsky
Keyword(s):  
Flux Method ◽  
Free Standing

Overcoming the Anisotropic Growth Limitations of Free‐Standing Single‐Crystal Halide Perovskite Films

2020 ◽  
Author(s):  
Yuan Chen ◽  
Haibo Zeng ◽  
Peipei Ma ◽  
Gaoyuan Chen ◽  
Jie Jian ◽  
...  
Keyword(s):  
Single Crystal ◽  
Anisotropic Growth ◽  
Free Standing ◽  
Halide Perovskite

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

scholarly journals Single crystal growth by self-flux method of the mixed valence gold halides Cs2[AuIX2][AuIIIX4] (X=Br,I)

2012 ◽  
Vol 355 (1) ◽  
pp. 13-16 ◽  
Author(s):  
Scott C. Riggs ◽  
M.C. Shapiro ◽  
F. Corredor ◽  
T.H. Geballe ◽  
I.R. Fisher ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Mixed Valence ◽  
Single Crystal Growth ◽  
Flux Method
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