Optical Characteristics of Amorphous III-V Nitride Thin Films

2004 ◽  
Vol 831 ◽  
Author(s):  
Jebreel M. Khoshman ◽  
Martin E. Kordesch
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Optical Constants ◽  
Near Infrared ◽  
Crystalline Silicon ◽  
Rf Magnetron Sputtering ◽  
Lorentz Model ◽  
Glass Substrates ◽  
Angle Dependence

ABSTRACTThe optical constants and polarized optical properties of amorphous III-V nitride thin films, a-(Al, Ga, In) N, deposited by RF magnetron sputtering onto crystalline silicon, c-Si, (111) and glass substrates have been investigated over the wavelength range 300 – 1400 nm. The optical constants of a-AlN were obtained by analysis of the measured ellipsometric spectra through the Cauchy–Urbach model while the optical constants of a-(In, Ga) N were determined using the Tauc-Lorentz model. Analysis of the absorption coefficient of a-AlN (in the range 200 – 1400 nm) and a-GaN (in the range 300 – 1400 nm) show the optical bandgap to be 5.9 ± 0.05 and 3.44 ± 0.05 eV. The absorption coefficient of a-InN (in the range 300 – 1400 nm) as a function of photon energy shows the absorption edge to be about 1.74 ± 0.05 eV. From the angle dependence of the p-polarized reflectivity we deduced Brewster and principal angles of these films. Measurement of the polarized optical properties revealed a high transmissivity (70 % – 95 %) and low absorptivity (< 18 %) for all three thin films in the visible and near infrared regions.

Electrical Properties of Indium-Doped Zinc Oxide Nanostructures Doped at Different Dopant Concentrations

2015 ◽  
Vol 1109 ◽  
pp. 593-597
Author(s):  
M.F. Nasir ◽  
Mohd Hannas ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Electrical Properties ◽  
Near Infrared ◽  
Sol Gel ◽  
Zinc Oxide Nanostructures ◽  
Glass Substrates ◽  
In Doping ◽  
Coating Method

This project has been focused on the electrical and optical properties on the effect of Indium doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different In dopant concentrations at 1 at%, 1.5 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 oC. In doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-Vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% In doping concentration which is 8.27× 103Ωcm-1The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800nm) and near infrared (NIR) (>800nm) range but exhibit high absorption in the UV range.

Effect of Substrate Temperature on the Opto-Electrical Propertites of Ti Doped ITO Films Deposited by RF Magnetron Sputtering

2012 ◽  
Vol 602-604 ◽  
pp. 1399-1403
Author(s):  
Rui Xin Ma ◽  
Shi Na Li ◽  
Guo Quan Suo
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Absorption Edge ◽  
Blue Shift ◽  
Rf Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Visible Wavelengths

Ti doped ITO (ITO:Ti) thin films were fabricated on glass substrates by RF magnetron sputtering using only one piece of ITO:Ti ceramic target at different substrate temperature (Ts). The effect of substrate temperature on structural, electrical, and optical properties of the films was investigated. It is confirmed that the resistivity of the films decreases with the increase of Ts till the minimum value of 2.5×10-4 Ω•cm and the transmittance in visible wavelengths is higher than 90%. "Blue shift" and "red shift" of UV absorption edge of the film were observed when Ts200 °CHeaders and footers

Determination of Optical Properties of Fluorocarbon Polymer Thin Films by a Variable Angle Spectroscopic Ellipsometry

1999 ◽  
Vol 588 ◽  
Author(s):  
Kang-Kuk Lee ◽  
Jin-Goo Park ◽  
Hyung-Jae Shin
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Optical Properties ◽  
Optical Constants ◽  
Visible Spectrum ◽  
Phase Model ◽  
Lorentz Model ◽  
Three Phase ◽  
Variable Angle Spectroscopic Ellipsometry ◽  
Best Fit

AbstractOptical properties of vapor phase (VP) deposited and spin-coated fluorocarbon (FC) thin films on silicon substrates, such as refractive index, extinction coefficient and film thickness were characterized by a variable angle spectroscopic ellipsometry (VASE) in the range of 300–800 nm. A Lorentz model allows us to simulate the optical constants of the FC films with a minimum number of parameters while maintaining Kramers-Kronig (KK) consistency between the real and imaginary parts of the optical constants. FC films are nearly transparent over the visible spectrum, so it is possible to assume k (extinction coefficient) = 0 over part of the visible spectrum in a Cauchy model. To accurately simulate the obtained ellipsometric spectra, we performed a regression analysis in two steps assuming a three-phase and a four-phase model. The regression analysis was performed using the three-phase model and a best-fit mean-squared error (MSE) value of 1.717 (VP deposited FC film, Lorentz model) was obtained. However, the four-phase model was used to improve the best-fit result of 0.531 (VP deposited FC film, Lorentz model). The surface roughness layer was assumed to be a mixture of FC films and voids under the Bruggeman effective medium approximation (EMA). We found that the best-fit MSE was reduced when surface roughness was included.

Electrical and Optical Properties of ZnO-Doped Zr0.8Sn0.2TiO4 Thin Films on ITO/Glass Substrates by RF Magnetron Sputtering

2011 ◽  
Vol 687 ◽  
pp. 70-74
Author(s):  
Cheng Hsing Hsu ◽  
His Wen Yang ◽  
Jenn Sen Lin
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Ito Glass

Electrical and optical properties of 1wt% ZnO-doped (Zr0.8Sn0.2)TiO4thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different rf power and substrate temperature were investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the deposition conditions, such as rf power and substrate temperature. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZST (111) orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. Optical transmittance spectroscopy further revealed high transparency (over 60%) in the visible region of the spectrum.

Effects of Rapid Thermal Process on the Microstructural, Electrical and Optical Properties of AZO Thin Films

2013 ◽  
Vol 441 ◽  
pp. 11-14
Author(s):  
Rong Bin Liu ◽  
Kai Liang Zhang ◽  
Yu Jie Yuan ◽  
Fang Wang ◽  
Juan Xu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Processing ◽  
Rf Magnetron Sputtering ◽  
Processing Temperature ◽  
Rapid Thermal Process ◽  
Electrical And Optical Properties ◽  
Pure Nitrogen ◽  
Glass Substrates ◽  
Deposited Films

In this paper, Al-doped ZnO thin films were deposited on glass substrates by RF magnetron sputtering and subsequently rapid thermal processing was executed under temperature range from 300°C to 600°C in order to investigate the microstructure, electrical, and optical properties of AZO films. XRD and AFM microscopy results showed that all the samples were of poly-crystalline and the grain size became larger with the increasing processing temperature. Compared with the sample as-deposited, it was shown that resistivity decreased from 1.9×10-2 to 1.48×10-3Ωcm and carrier concentration increased from 1.48×1020 to 5.59×1020 cm3 when the sample was processed at 600°C in pure nitrogen for 1 min. The highest transmittance of the samples processed at 500°C improves to 90.35% compared with the as-deposited films (68.2% ) as the wavelength varied between 400 and 900 nm.

SPECTROSCOPIC ELLIPSOMETRIC STUDIES ON THE OPTICAL PROPERTIES OF PHOSPHORUS DOPED NANOCRYSTALLINE NiO THIN FILMS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 985-988 ◽  
Author(s):  
N. S. DAS ◽  
K. K. CHATTOPADHYAY ◽  
B. SAHA ◽  
R. THAPA
Keyword(s):  
Thin Films ◽  
Optical Constants ◽  
Rf Magnetron Sputtering ◽  
Suitable Model ◽  
X Ray Diffraction ◽  
Phosphorus Doping ◽  
X Ray ◽  
Glass Substrates ◽  
Increase With Increase ◽  
Phosphorus Doped

Undoped and phosphorus doped nanocrystalline nickel oxide thin films have been synthesized on silicon and glass substrates by RF magnetron sputtering technique in pure Ar atmosphere. Proper phase formation was confirmed by X-ray diffraction analysis. Energy band gaps were determined using UV-Vis spectra. Formation of NiO nanoparticle of dimension ~15 nm was confirmed using HRTEM. Doping of phosphorus as an impurity was confirmed from EDX spectra and XPS studies. Spectroscopic ellipsometric studies were performed on such films and the spectra were analyzed with a suitable model. Optical constants were determined and refractive indices were found to increase with increase of phosphorus doping percentages.

Electrical Properties of Tin-Doped Zinc Oxide Nanostructures Doped at Different Dopant Concentrations

2015 ◽  
Vol 1109 ◽  
pp. 577-581 ◽  
Author(s):  
M.F. Nasir ◽  
Mohd Hannas ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Electrical Properties ◽  
Near Infrared ◽  
Sol Gel ◽  
Zinc Oxide Nanostructures ◽  
Sn Doping ◽  
Glass Substrates ◽  
Coating Method

This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 oC. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 103Ωcm-1. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800nm) and near infrared (NIR) (>800nm) range but exhibit high absorption in the UV range.

Vanadium Dioxide Thin Films Deposited on TiO2 Buffer Layer for Smart Thermochromic Glazing of Windows

2011 ◽  
Vol 374-377 ◽  
pp. 1365-1368 ◽  
Author(s):  
Jian Wei Ma ◽  
Gang Xu ◽  
Lei Miao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Buffer Layer ◽  
Quartz Glass ◽  
Vanadium Dioxide ◽  
Near Infrared ◽  
Rf Magnetron Sputtering ◽  
Infrared Region ◽  
Glass Substrates ◽  
Different Color

Vanadium dioxide (VO2) films were prepared on quartz glass and TiO2-coated quartz glass substrates by reactive RF-magnetron sputtering. The VO2 thin film with film thickness of 50 nm deposited on quartz glass substrates showed two kinds of regions with different color visible to the naked eye, i.e., the earth yellow region and the cyan region. Both XRD and Raman spectroscopy showed that the different color regions of the films had the different crystallinity quality and phase composition. Whereas, the VO2 thin films with film thickness of 50 nm fabricated on TiO2-coated quartz glass (with TiO2 film thickness of 50 nm) had uniform color and exhibited a larger change in transmittance at near infrared region than the VO2 thin films deposited on quartz glass did. A TiO2 buffer layer improved the crystallinity and uniformity of the VO2 film. Such very thin VO2 films with a TiO2 buffer layer have high potential for practical application in smart thermal glazing of windows.

scholarly journals Morphological, optical and electrochromic properties of dry-lithiated nanostructured WO3 thin films

2018 ◽  
Vol 36 (2) ◽  
pp. 341-347
Author(s):  
K.V. Madhuri ◽  
M. Bujji Babu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Optical Constants ◽  
Near Infrared ◽  
Lithium Content ◽  
X Ray ◽  
Glass Substrates ◽  
Evaporation Technique ◽  
Wo3 Thin Films ◽  
Deposited Films

Abstract Tungsten trioxide (WO3) thin films were prepared by thermal evaporation technique on thoroughly cleaned glass substrates at high pressure of 133.322 mPa in presence of argon. The substrate temperature was maintained from 6 °C to 8 °C with the help of a cold jar. The deposited films were annealed at 400 °C in air for about 2 hours. The films were characterized in terms of their composition by X-ray photoelectron spectroscopy. Subsequently, the laboratory developed dry lithiation method was used to intercalate lithium atoms into as-deposited films in various proportions. With the amount of lithium content inserted into the film, the films showed coloration in visible and near infrared regions. The morphology, coloration efficiency and optical constants of annealed and lithiated films were calculated.

scholarly journals Doping effect by SiO2 on optical properties of ZnO Thin Films Prepared by pulsed laser depositions (PLD) technique

2019 ◽  
Vol 24 (1) ◽  
pp. 93
Author(s):  
Zuheer. N. Majeed1 ◽  
Abdul-Majeed E. Al-Samarai1 ◽  
Ghuson. H.Mohammed2
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Optical Constants ◽  
Silicon Oxide ◽  
Energy Gap ◽  
Spectral Absorption ◽  
Coefficient Increase ◽  
Before And After ◽  
Pulse Deposition

In this paper,Zinc oxide was dopped by various concentrations (5,10,15,20,25) % wt, silicon oxide The mixture was deposited on glass substrate by laser pulse deposition at room temperature to obtain (Zn2SiO4) thin films .The optical properties of thin films  prepared on spectral absorption and transmission  recording were studied at  the wavelength range (200- 1100) nm. Some of the optical constants, including absorptance, transmission, absorption coefficient, and energy gap are calculated before and after annealing at (400 ̊C) for (1 hr). Absorptance values and absorption coefficient increase after doping and transmission and energy gap decreases after the doping. Absorbance values and absorption coefficient decreases after annealing and transmission and energy gap increase after  the annealing .   http://dx.doi.org/10.25130/tjps.24.2019.015   

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