Photoluminescence Investigation of Dislocation-Related Defects in High Purity Silicon

1986 ◽  
Vol 82 ◽  
Author(s):  
A. T. Hunter ◽  
Kimberly L. Schumacher
Keyword(s):  
Thermal Stress ◽  
High Temperature ◽  
High Purity ◽  
Free Exciton ◽  
Small Temperature ◽  
Phonon Replica ◽  
Float Zone ◽  
Three Samples ◽  
High Purity Silicon ◽  
Luminescence Investigation

ABSTRACTWe conducted a luminescence investigation of the D1-D4 luminescence lines (0.8 to 1.0 eV) in three samples of high-purity, float-zone silicon. We conclude that the D3 line is a transverse-optical-phonon replica of the D4 line. In the samples studied, all of the defects were formed in the bulk of the crystals by high temperature thermal stress. The free-exciton lifetimes are short, varying between ∼20 nsec at a dislocation density of 1 × 106 cm−2 to ∼200 nsec at a density of 7 × 104 cm−2. The D4 decay shows a small temperature dependence, and varies between samples.

A Study of Free- and Bound-Exciton Recombination in Device Quality Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
S. J. Sharp ◽  
A. T. Collins
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Temperature Dependence ◽  
High Purity ◽  
Vapour Deposition ◽  
Synthetic Diamond ◽  
Free Exciton ◽  
Chemical Vapour ◽  
High Pressure High Temperature ◽  
Exciton Recombination

ABSTRACTA cathodoluminescence (CL) study of free- and bound-exciton recombination in high purity high pressure high temperature (HPHT) synthetic diamond is presented, including temperature dependence measurements of the free-exciton intensity and luminescence decaytime. The results are compared with those from device quality diamond produced using the chemical vapour deposition (CVD) process.

Characterization of Ultra High Purity Silicon Epitaxy Using Photoluminscence Spectroscopy

1986 ◽  
Vol 90 ◽  
Author(s):  
J. E. Huffman ◽  
M. L. W. Thewalt ◽  
A. G. Steele
Keyword(s):  
High Purity ◽  
Impurity Content ◽  
Substrate Material ◽  
Silicon Substrates ◽  
Epitaxial Silicon ◽  
Phonon Replica ◽  
Silicon Epitaxy ◽  
Ultra High Purity ◽  
High Purity Silicon

ABSTRACTHigh purity epitaxial silicon samples, grown on indium doped and on ultrahigh resistivity silicon substrates, were analyzed for impurity content using photoluminescence spectroscopy (PL) and spreading resistance analysis (SRA). Calibrated SRA indicated typical net carrier concentrations of < 3×1012cm-3 in the epitaxial layers, and about 7×1011 cm-3 in the substrates. Impurities were identified by collecting highly resolved, very clean no-phonon and TO-phonon replica PL spectra at liquid helium temperatures. Spectra were taken on the substrate material alone and on substrates with epitaxy. Ga, As, A1, B and P contamination was evident in the epitaxy. Correlation of SRA and PL results on samples with various levels of contamination at the epitaxy substrate interface identified Al as the main interfacial impurity.

ORVAR SUPERIOR

Alloy Digest ◽  
2007 ◽  
Vol 56 (8) ◽  
Keyword(s):  
Fine Structure ◽  
High Temperature ◽  
North America ◽  
Thermal Fatigue ◽  
High Purity ◽  
Heat Treating ◽  
Good Resistance ◽  
Die Steel ◽  
Temperature Performance ◽  
Hot Work Die

Abstract Orvar Superior is a premium Cr-Mo-V alloyed hot-work die steel with good resistance to thermal fatigue. The name “superior” is used to indicate that close control in special melting and refining has attained a high purity and very fine structure that produces isotropic properties. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on high temperature performance as well as forming, heat treating, machining, and joining. Filing Code: TS-653. Producer or source: Böhler-Uddeholm North America.

The Interactions of Carbon and Nitrogen in Liquid Silicon

2014 ◽  
Vol 33 (4) ◽  
pp. 363-368 ◽  
Author(s):  
Halvor Dalaker ◽  
Merete Tangstad
Keyword(s):  
Silicon Nitride ◽  
Carbon Source ◽  
Nitrogen Content ◽  
High Purity ◽  
Liquid Silicon ◽  
Interaction Parameters ◽  
Carbon And Nitrogen ◽  
Temperature Range ◽  
High Purity Silicon

AbstractThe interactions between carbon and nitrogen in liquid silicon have been studied experimentally. High purity silicon was melted in silicon nitride crucibles under an Ar atmosphere with a graphite slab inserted in the crucible prior to melting as a carbon source. The system was thus simultaneously equilibrated with Si3N4 and SiC. Samples were extracted in the temperature range 1695–1798 K and analyzed using Leco.It was observed that the simultaneous saturation of nitrogen and carbon caused a significant increase in the solubilities of both elements. The interaction parameters were derived as The solubility of carbon in liquid silicon as a function of temperature and nitrogen content was found to follow: And the solubility of nitrogen in liquid silicon found to follow:

Clean Preparation of High-Purity Silicon from Rice Husk Ash by a Modified Metallurgical Method

JOM ◽  
2021 ◽  
Author(s):  
Jian Kong ◽  
Donghui Wei ◽  
Pengfei Xing ◽  
Yanxin Zhuang ◽  
Xing Jin ◽  
...  
Keyword(s):  
Rice Husk ◽  
High Purity ◽  
Rice Husk Ash ◽  
High Purity Silicon

Investigation Into Thermal Stress Characteristics of Pipe-in-Pipe Under High Temperature Condition

2018 ◽  
Author(s):  
Si-Hwa Jeong ◽  
Min-Gu Won ◽  
Nam-Su Huh ◽  
Yun-Jae Kim ◽  
Young-Jin Oh ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Thermal Stress ◽  
High Temperature ◽  
Temperature Distribution ◽  
Heat Transfer Analysis ◽  
Piping System ◽  
Curved Pipe ◽  
High Temperature Condition ◽  
Single Pipe ◽  
Radiation Conditions

In this paper, the thermal stress characteristics of the pipe-in-pipe (PIP) system under high temperature condition are analyzed. The PIP is a type of pipe applied in sodium-cooled faster reactor (SFR) and has a different geometry from a single pipe. In particular, under the high temperature condition of the SFR, the high thermal stress is generated due to the temperature gradient occurring between the inner pipe and outer pipe. To investigate the thermal stress characteristics, three cases are considered according to geometry of the support. The fully constrained support and intermediate support are considered for case 1 and 2, respectively. For case 3, both supports are applied to the actual curved pipe. The finite element (FE) analyses are performed in two steps for each case. Firstly, the heat transfer analysis is carried out considering the thermal conduction, convection and radiation conditions. From the heat transfer analysis, the temperature distribution results in the piping system are obtained. Secondly, the structural analysis is performed considering the temperature distribution results and boundary conditions. Finally, the effects of the geometric characteristics on the thermal stress in the PIP system are analyzed.

The Role of Cr in H Desorption Kinetics in Rapidly Solidified Al

2014 ◽  
Vol 783-786 ◽  
pp. 264-269 ◽  
Author(s):  
Iya I. Tashlykova-Bushkevich ◽  
Keitaro Horikawa ◽  
Goroh Itoh
Keyword(s):  
High Temperature ◽  
Thermal Desorption ◽  
High Purity ◽  
Thermal Desorption Spectroscopy ◽  
Secondary Phase ◽  
Hydrogen Desorption ◽  
Oxide Surface ◽  
Desorption Kinetics ◽  
Hydrogen Trapping ◽  
Rapidly Solidified

Hydrogen desorption kinetics for rapidly solidified high purity Al and Al-Cr alloy foils containing 1.0, 1.5 and 3.0 at % Cr were investigated by means of thermal desorption analysis (TDA) at a heating rate of 3.3°C/min. For the first time, it was found that oxide inclusions of Al2O3 are dominant high-temperature hydrogen traps compared with pores and secondary phase precipitates resulted in rapid solidification of Al and its alloys. The correspondent high-temperature evolution rate peak was identified to be positioned at 600°C for high purity Al and shifted to 630°C for Al-Cr alloys. Amount of hydrogen trapped by dislocations increases in the alloys depending on Cr content. Microstructural hydrogen trapping behaviour in low-and intermediate temperature regions observed here was in coincidence with previous data obtained for RS materials using thermal desorption spectroscopy (TDS). The present results on hydrogen thermal desorption evolution indicate that the effect of oxide surface layers becomes remarkable in TDA measurements and show advantages in combinations of both desorption analysis methods to investigate hydrogen desorption kinetics in materials.

Processing high-purity silicon used for sensor applications

1989 ◽  
Vol 16 (3) ◽  
pp. 287-298 ◽  
Author(s):  
W.R.Th. Ten Kate ◽  
S.A. Audet
Keyword(s):  
High Purity ◽  
Sensor Applications ◽  
High Purity Silicon
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