In situ investigation of growth of gold on crystalline TiO2 and amorphous Al2O3 substrates

2003 ◽  
Vol 795 ◽  
Author(s):  
L. Lauter ◽  
R. Abermann
Keyword(s):  
Film Growth ◽  
Gold Film ◽  
Interface Layer ◽  
Growth Stress ◽  
Island Growth ◽  
In Situ Investigation ◽  
Substrate Temperatures ◽  
Amorphous Al2o3 ◽  
Gold Coverage

ABSTRACTThe growth of thin gold films on highly crystalline TiO2 and amorphous Al2O3 substrates and its dependence on substrate temperature was investigated under UHV-conditions by in situ internal stress measurements. Deposition of gold on amorphous Al2O3 at substrate temperatures between 27°C and 300°C shows a stress vs. thickness curve which indicates island growth at first and the formation of a polycrystalline film at higher thickness. A comparable stress vs. thickness curve is found for the growth of gold on the highly crystalline TiO2 substrate at substrate temperatures below 200°C, again indicating island growth. At higher temperatures, however, a new tensile stress feature at low gold coverage is interpreted to indicate the formation of a strained interface layer. This strain in the gold film is eliminated after deposition of a few monolayers most likely through incorporation of dislocations and defects. The growth stress at higher film thickness is indicative of island film growth.

High-rate a-Si:H and μc-Si:H Film Growth Studied by Advanced Plasma and in situ Film Diagnostics

2002 ◽  
Vol 715 ◽  
Author(s):  
W.M.M. Kessels ◽  
P.J. van den Oever ◽  
J.P.M. Hoefnagels ◽  
J. Hong ◽  
I.J. Houston ◽  
...  
Keyword(s):  
Film Growth ◽  
Film Studies ◽  
Interface Layer ◽  
Surface Reactivity ◽  
Attenuated Total Reflection ◽  
High Rate ◽  
High Deposition Rate ◽  
Basic Insight ◽  
Insight Into

AbstractPlasma and in situ film studies have been applied to the expanding thermal plasma to obtain basic insight into the deposition of a-Si:H and μc-Si:H at high rates (> 10 Å/s). A study of the density of plasma radicals (Si, SiH, SiH3) and of the radicals' surface reactivity has revealed that SiH3 is the most important radical for the growth of both materials. In situ attenuated total reflection infrared spectroscopy and spectroscopic ellipsometry have revealed a thick interface layer and consequently long incubation time for the materials deposited at a high deposition rate.

In situ investigation of poly(3,4-ethylenedioxythiophene) film growth during liquid phase deposition polymerization

2018 ◽  
Vol 653 ◽  
pp. 274-283 ◽  
Author(s):  
Jörgen Metsik ◽  
Martin Timusk ◽  
Andris Šutka ◽  
Marek Mooste ◽  
Kaido Tammeveski ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Film Growth ◽  
Liquid Phase Deposition ◽  
In Situ Investigation

Chemical vapour deposition tungsten film growth studied by in situ growth stress measurements

1993 ◽  
Vol 228 (1-2) ◽  
pp. 125-128 ◽  
Author(s):  
G.J. Leusink ◽  
T.G.M. Oosterlaken ◽  
G.C.A.M. Janssen ◽  
S. Redelaar
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Film Growth ◽  
Chemical Vapour ◽  
Growth Stress ◽  
In Situ Growth ◽  
Stress Measurements ◽  
Tungsten Film

Study on the Growth of Crystalline Er2O3 Films on Si Substrates by RHEED Patterns

2011 ◽  
Vol 486 ◽  
pp. 163-166
Author(s):  
Yan Yan Zhu ◽  
Run Xu ◽  
Ze Bo Fang
Keyword(s):  
Film Growth ◽  
Interface Layer ◽  
High Energy ◽  
High Substrate Temperature ◽  
Initial Growth ◽  
High Energy Electron ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Oxidation Effect

Er2O3 films with good crystallinity have been achieved on an oxidized Si (111) surface by molecule beam epitaxy. The initial growth of Er2O3 films epitaxially grown on Si surfaces is investigated by in situ reflection high energy electron diffraction. An interface layer was formed at the very beginning of the growth of Er2O3 film on Si, which is supposed to be attributed to the Er atom catalytic oxidation effect. The results obtained indicate that with the film growth process continued, oxygen deficient Er oxide captures oxygen from the interface layer which is formed inevitably at the initial growth of Er2O3 film and thus reduce and even remove the interface layer if the condition of O2 pressure is insufficient at a high substrate temperature such as 700°C in our case.

In Situ GISAXS Study of Gold Film Growth on Conducting Polymer Films

2008 ◽  
Vol 1 (2) ◽  
pp. 353-360 ◽  
Author(s):  
Gunar Kaune ◽  
Matthias A. Ruderer ◽  
Ezzeldin Metwalli ◽  
Weinan Wang ◽  
Sebastien Couet ◽  
...  
Keyword(s):  
Conducting Polymer ◽  
Polymer Films ◽  
Film Growth ◽  
Gold Film ◽  
Conducting Polymer Films

In Situ Study of Titanium Film Growth On Different Substrates

2000 ◽  
Vol 648 ◽  
Author(s):  
P. Oberhauser ◽  
M. Poppeller ◽  
R. Abermann
Keyword(s):  
Surface Roughness ◽  
Tensile Stress ◽  
Film Thickness ◽  
Film Growth ◽  
Substrate Surface ◽  
Growth Stress ◽  
Microstructural Properties ◽  
Titanium Film ◽  
High Degree

AbstractThe chemical and microstructural properties of a surface have a strong influence on the growth mode and the morphology of a film evaporated onto this interface. Changes in the growth stress of thin titanium films, measured in situ by a cantilever beam technique, evaporated under UHV-conditions are used to monitor the chemical and microstructural properties of a substrate surface. The starting substrate film used in this study was a quasi single-crystalline TiO2-film (d=50 nm) prepared by reactive evaporation of titanium in an oxygen atmosphere and subsequent annealing (20 min, 400°C). The Ti-growth stress on this substrate is compressive up to monolayer coverage and tensile at higher film thickness, which is interpreted to indicate a strong interaction between TiO2 and the arriving Ti atoms at the interface during monolayer formation and strained (tensile) layer epitaxy at higher film thickness. In a second series of experiments the TiO2-film was covered with Al-overlayers of varying thickness. Due to oxygen interdiffusion from the TiO2-film an amorphous Al-oxide layer is formed at the interface eliminating the high degree of order of the substrate TiO2-film. On this amorphous substrate the stress vs. thickness curve of the Ti-film, in terms of our stress model, is interpreted to indicate island formation and growth of a polycrystalline Ti-film. At Al-layer thicknesses above about 3 nm the Al-interface becomes metallic. The structure of this Al-surface depends on the film thickness and substrate temperature during its deposition. During deposition of the first Ti-monolayer on metallic Al a large incremental tensile stress (up to 45 GPa) is measured. The magnitude of this tensile stress is closely related to the surface microstructure of the Al substrate. The surface roughness deduced from the tensile interface stress is compared with the surface roughness measured by AFM.For comparison, analogous experiments were made with Al2O3/Al substrate bilayers. The results of these experiments qualitatively agree with those on the TiO2/Al-substrate. The general shape of the stress vs. thickness curve is comparable, however quantitative differences are interpreted to be due to differences in the structure and/or chemical composition of the substrate Al-film.

XPS Surface Composition Analysis During UV Laser Photodeposition of Al From Tiba on Si (100) Substrates: Direct Observation of the Prenucleation Regime

1987 ◽  
Vol 101 ◽  
Author(s):  
David A. Mantell ◽  
T.E. Orlowski
Keyword(s):  
Laser Processing ◽  
Film Growth ◽  
Surface Composition ◽  
Pulsed Laser ◽  
Composition Analysis ◽  
Uv Laser ◽  
Island Growth ◽  
Photochemical Decomposition ◽  
Xps Study

ABSTRACTAn in situ XPS study is made of the AI film growth from TIBA using an ArF pulsed laser on Si (100) substrates. It is found that the film is formed by the photochemical decomposition of the organometaliic on the surface. A metallic film is formed by island growth. These islands are covered with an organometaliic fragment layer of partially decomposed TIBA. The consequences of these observations toward understanding how laser processing can create prenucleation regions that catalyze film growth at temperatures below standard CVD temperatures are discussed.

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