Atomic Layer Deposition of Silica and Group IV Metal Oxides Nanolaminates

2003 ◽  
Vol 786 ◽  
Author(s):  
Lijuan Zhong ◽  
Fang Chen ◽  
Stephen A. Campbell ◽  
Wayne L. Gladfelter
Keyword(s):  
Layer Structure ◽  
Atomic Layer ◽  
Maximum Growth ◽  
Maximum Growth Rate ◽  
Group Iv ◽  
Scattering Pattern ◽  
X Ray ◽  
X Ray Scattering ◽  
Layer Deposition ◽  
Mixed Films

ABSTRACTWith alternating exposure of Si (100) substrates to tri (t -butoxy) silanol and anhydrous zirconium nitrate, mixed films of zirconia and silica were deposited at 162°C. The films were atomically smooth and their thickness was uniform across the entire substrate. The maximum growth rate of 12 Å/cycle implies deposition of more than one monolayer per cycle. A singular reflection in the low angle X-ray scattering pattern indicates an ordered bi-layer structure. Similar nanolaminate structures were also formed using anhydrous nitrates of hafnium and tin.

X-ray scattering of calcite thin films deposited by atomic layer deposition: Studies in air and in calcite saturated water solution

2014 ◽  
Vol 565 ◽  
pp. 277-284 ◽  
Author(s):  
Peng Wang ◽  
Michael R. Hudak ◽  
Allan Lerner ◽  
Robert K. Grubbs ◽  
Shanmin Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Water Solution ◽  
Atomic Layer ◽  
X Ray ◽  
X Ray Scattering ◽  
Saturated Water ◽  
Layer Deposition ◽  
Saturated Water Solution ◽  
Ray Scattering

In-Situ Synchrotron X-Ray Scattering Study of Thin Film Growth by Atomic Layer Deposition

2011 ◽  
Vol 11 (2) ◽  
pp. 1577-1580 ◽  
Author(s):  
Yong Jun Park ◽  
Dong Ryeol Lee ◽  
Hyun Hwi Lee ◽  
Han-Bo-Ram Lee ◽  
Hyungjun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
X Ray ◽  
X Ray Scattering ◽  
Layer Deposition ◽  
Scattering Study

scholarly journals Conformal SiO2 coating of sub-100 nm diameter channels of polycarbonate etched ion-track channels by atomic layer deposition

2015 ◽  
Vol 6 ◽  
pp. 472-479 ◽  
Author(s):  
Nicolas Sobel ◽  
Christian Hess ◽  
Manuela Lukas ◽  
Anne Spende ◽  
Bernd Stühn ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Stoichiometric Composition ◽  
Atomic Layer ◽  
X Ray ◽  
X Ray Scattering ◽  
Layer Deposition ◽  
Track Membranes ◽  
Cylindrical Tubes ◽  
Coated Membranes

Polycarbonate etched ion-track membranes with about 30 µm long and 50 nm wide cylindrical channels were conformally coated with SiO2 by atomic layer deposition (ALD). The process was performed at 50 °C to avoid thermal damage to the polymer membrane. Analysis of the coated membranes by small angle X-ray scattering (SAXS) reveals a homogeneous, conformal layer of SiO2 in the channels at a deposition rate of 1.7–1.8 Å per ALD cycle. Characterization by infrared and X-ray photoelectron spectroscopy (XPS) confirms the stoichiometric composition of the SiO2 films. Detailed XPS analysis reveals that the mechanism of SiO2 formation is based on subsurface crystal growth. By dissolving the polymer, the silica nanotubes are released from the ion-track membrane. The thickness of the tube wall is well controlled by the ALD process. Because the track-etched channels exhibited diameters in the range of nanometres and lengths in the range of micrometres, cylindrical tubes with an aspect ratio as large as 3000 have been produced.

Atomic Layer Deposition of Molybdenum Oxide for Solar Cell Application

2014 ◽  
Vol 492 ◽  
pp. 375-379 ◽  
Author(s):  
Dip K. Nandi ◽  
Shaibal K. Sarkar
Keyword(s):  
Growth Rate ◽  
Atomic Layer Deposition ◽  
Molybdenum Oxide ◽  
Atomic Layer ◽  
Maximum Growth ◽  
Maximum Growth Rate ◽  
Solar Cell Application ◽  
Layer Deposition ◽  
Temperature Window

This work focuses on synthesis of molybdenum oxide (MoO3) by Atomic layer deposition (ALD) using molybdenum hexacarbonyl [Mo (CO)6] and ozone. In-situ growth characteresticswerestudied by Quartz Crystal Microbalance (QCM). ALD temperature window for this material lies between 165 to 175°C giving a maximum growth rate of 0.45 Å per ALD cycle. Negligible nucleation was found by QCM studyindicating a linear growth of the film. Effect of different oxidants on the growth rate is also studied.As-deposited film is amorphous in nature which converts to monoclinic-MoO3 after annealing as seen by taransmission electron microscopy.

scholarly journals Atomic layer deposition-based tuning of the pore size in mesoporous thin films studied by in situ grazing incidence small angle X-ray scattering

Nanoscale ◽  
2014 ◽  
Vol 6 (24) ◽  
pp. 14991-14998 ◽  
Author(s):  
Jolien Dendooven ◽  
Kilian Devloo-Casier ◽  
Matthias Ide ◽  
Kathryn Grandfield ◽  
Mert Kurttepeli ◽  
...  
Keyword(s):  
Thin Films ◽  
Pore Size ◽  
Small Angle ◽  
Atomic Layer ◽  
Grazing Incidence ◽  
X Ray ◽  
X Ray Scattering ◽  
Layer Deposition ◽  
Mesoporous Thin Films

Atomic Layer Deposition of LiF and Lithium Ion Conducting (AlF3)(LiF)x Alloys Using Trimethylaluminum, Lithium Hexamethyldisilazide and Hydrogen Fluoride

2017 ◽  
Author(s):  
Younghee Lee ◽  
Daniela M. Piper ◽  
Andrew S. Cavanagh ◽  
Matthias J. Young ◽  
Se-Hee Lee ◽  
...  
Keyword(s):  
Lithium Ion ◽  
Atomic Layer ◽  
Mass Gain ◽  
Alloy Film ◽  
Ex Situ ◽  
X Ray ◽  
Layer Deposition ◽  
Ion Conducting ◽  
Good Agreement

<div>Atomic layer deposition (ALD) of LiF and lithium ion conducting (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloys was developed using trimethylaluminum, lithium hexamethyldisilazide (LiHMDS) and hydrogen fluoride derived from HF-pyridine solution. ALD of LiF was studied using in situ quartz crystal microbalance (QCM) and in situ quadrupole mass spectrometer (QMS) at reaction temperatures between 125°C and 250°C. A mass gain per cycle of 12 ng/(cm<sup>2</sup> cycle) was obtained from QCM measurements at 150°C and decreased at higher temperatures. QMS detected FSi(CH<sub>3</sub>)<sub>3</sub> as a reaction byproduct instead of HMDS at 150°C. LiF ALD showed self-limiting behavior. Ex situ measurements using X-ray reflectivity (XRR) and spectroscopic ellipsometry (SE) showed a growth rate of 0.5-0.6 Å/cycle, in good agreement with the in situ QCM measurements.</div><div>ALD of lithium ion conducting (AlF3)(LiF)x alloys was also demonstrated using in situ QCM and in situ QMS at reaction temperatures at 150°C A mass gain per sequence of 22 ng/(cm<sup>2</sup> cycle) was obtained from QCM measurements at 150°C. Ex situ measurements using XRR and SE showed a linear growth rate of 0.9 Å/sequence, in good agreement with the in situ QCM measurements. Stoichiometry between AlF<sub>3</sub> and LiF by QCM experiment was calculated to 1:2.8. XPS showed LiF film consist of lithium and fluorine. XPS also showed (AlF<sub>3</sub>)(LiF)x alloy consists of aluminum, lithium and fluorine. Carbon, oxygen, and nitrogen impurities were both below the detection limit of XPS. Grazing incidence X-ray diffraction (GIXRD) observed that LiF and (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film have crystalline structures. Inductively coupled plasma mass spectrometry (ICP-MS) and ionic chromatography revealed atomic ratio of Li:F=1:1.1 and Al:Li:F=1:2.7: 5.4 for (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film. These atomic ratios were consistent with the calculation from QCM experiments. Finally, lithium ion conductivity (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film was measured as σ = 7.5 × 10<sup>-6</sup> S/cm.</div>

Ex-situ X-ray diffraction analysis of electrode strain at TiO2 atomic layer deposition/α-MoO3 interface in a novel aqueous potassium ion battery

2016 ◽  
Vol 316 ◽  
pp. 160-169 ◽  
Author(s):  
Nicholas David Schuppert ◽  
Santanu Mukherjee ◽  
Alex M. Bates ◽  
Eun-Jin Son ◽  
Moon Jong Choi ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffraction Analysis ◽  
Atomic Layer ◽  
Potassium Ion ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Deposition
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