Near-infrared Ge Photodetectors Fabricated on Si Substrates with CMOS Technology

2003 ◽  
Vol 770 ◽  
Author(s):  
Douglas D. Cannon ◽  
Samerkhae Jongthammanurak ◽  
Jifeng Liu ◽  
David T. Danielson ◽  
Kazumi Wada ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
Growth Temperature ◽  
Tensile Strain ◽  
Near Infrared ◽  
Transition Energy ◽  
Cmos Technology ◽  
Cmos Process ◽  
Thermal Expansion Mismatch ◽  
Direct Transition ◽  
Si Substrates

AbstractWe have fabricated the first CMOS process compatible high-responsivity Ge p-i-n diodes for 1.55 μm wavelengths. The thermal expansion mismatch between Ge epilayers and Si substrates was used to engineer tensile strain upon cooling from the growth temperature. This 0.2% tensile strain results in a lowering of the direct transition energy in Ge by 30 meV and extends the responsivity curve to near 1.6μm.

Photoluminescence of InP/GaAs/Si Heterostructures

1988 ◽  
Vol 144 ◽  
Author(s):  
V.P. Mazzi ◽  
N.M. Haegel ◽  
S.M. Vernon ◽  
V.E. Haven
Keyword(s):  
Residual Stress ◽  
Thermal Expansion ◽  
Low Temperature ◽  
Band Gap ◽  
Buffer Layer ◽  
Thermal Expansion Mismatch ◽  
Si Substrates ◽  
Gaas Buffer Layer ◽  
Buffer Layer Thickness ◽  
Low Temperature Photoluminescence

ABSTRACTLow temperature photoluminescence results from MOCVD epitaxial InP grown on GaAs/Si substrates are presented as a function of thickness of the GaAs buffer layer. As a consequence of thermal expansion mismatch of the heterostructure, the InP layer contains residual stress which causes the band gap to shift and splits the valence band degeneracy of the mj = ± 3/2 and the mj = ± 1/2 bands. Both the shifting and splitting phenomena are clearly seen in tite PL results and are shown to depend on the GaAs buffer layer thickness.

Strained Ge and Ge1-xSnx Technology for Future CMOS Devices

2011 ◽  
Vol 470 ◽  
pp. 146-151 ◽  
Author(s):  
Osamu Nakatsuka ◽  
Shotaro Takeuchi ◽  
Yosuke Shimura ◽  
Akira Sakai ◽  
Shigeaki Zaima
Keyword(s):  
Electrical Properties ◽  
Buffer Layer ◽  
Tensile Strain ◽  
Cmos Technology ◽  
Crystalline Structures ◽  
Si Substrates ◽  
Heteroepitaxial Layers

We have investigated the growth and crystalline structures of Ge1-xSnx buffer and tensile-strained Ge layers for future use in CMOS technology. We have demonstrated that strain relaxed Ge1-xSnx layers with an Sn content of 12.3% and 9.2% can be grown on Ge and Si substrates, respectively. We achieved a tensile-strain value of 0.71 % in Ge layers on a Ge0.932Sn0.068 buffer layer. We have also investigated the effects of Sn incorporation into Ge on the electrical properties of Ge1-xSnx heteroepitaxial layers.

Optical Properties of Strained Polycrystalline CuInS2 Layers

2007 ◽  
Vol 1012 ◽  
Author(s):  
Jens Eberhardt ◽  
Heinrich Metzner ◽  
Rüdiger Goldhahn ◽  
Florian Hudert ◽  
Kristian Schulz ◽  
...  
Keyword(s):  
Optical Properties ◽  
Buffer Layer ◽  
Tensile Strain ◽  
Transition Energy ◽  
Molecular Beams ◽  
Oscillator Strengths ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Yield Information

AbstractUsing molecular beams, polycrystalline thin CuInS2 (CIS) films of different thicknesses were grown on Si substrates covered with a sputtered Mo-buffer layer. Systematic photoluminescence and photoreflectance measurements were performed to investigate the influence of strain - introduced during growth - on the optical properties. The transition energy of the free A-exciton (FXA) decreases with increasing tensile strain caused by (i) increasing thickness of the Mo buffer layer and (ii) decreasing thickness of the CIS layer. Furthermore, the energetic splittings between FXA, FXB, and FXC increase with increasing tensile strain. When combined with X-ray diffraction data, the oscillator strengths of the excitonic transitions yield information on the strain distribution within the films.

MOCVD Growth of Gan on Silicon and Related Surfaces

1998 ◽  
Vol 512 ◽  
Author(s):  
J. Han ◽  
J. G. Fleming ◽  
D. M. Follstaedt
Keyword(s):  
Thermal Expansion ◽  
High Temperature ◽  
Buffer Layer ◽  
Silicon On Insulator ◽  
Thermal Expansion Mismatch ◽  
Subsequent Growth ◽  
Si Substrates ◽  
Mocvd Growth ◽  
Spatial Coherency

ABSTRACTThe growth of GaN on silicon (Si) substrates by MOCVD is reported in this paper. The use of a high-temperature AIN buffer layer appears to be necessary to establish an initial template morphology for the subsequent growth of GaN. Nucleation modes of GaN on SiO2, (100) Si, and (111) Si are compared; it is shown that the spatial coherency among the nuclei is most preserved when the growth occurred on the hexagonal Si (111) surface. To circumvent the problem associated with cracking due to a thermal expansion mismatch, we also investigate the possibility of using a silicon-on-insulator (SOI) scheme.

Microstructural and Microchemical Characterization of Nickel Sulfide Inclusions in Plate Glass

1991 ◽  
Vol 49 ◽  
pp. 962-963
Author(s):  
J. Cooper ◽  
O. Popoola ◽  
W. M. Kriven
Keyword(s):  
Thermal Expansion ◽  
Phase Transformation ◽  
Glass Matrix ◽  
Nickel Sulfide ◽  
Plate Glass ◽  
Thermal Expansion Mismatch ◽  
Volume Increase ◽  
Β Phase ◽  
Microchemical Characterization

Nickel sulfide inclusions have been implicated in the spontaneous fracture of large windows of tempered plate glass. Two alternative explanations for the fracture-initiating behaviour of these inclusions have been proposed: (1) the volume increase which accompanies the α to β phase transformation in stoichiometric NiS, and (2) the thermal expansion mismatch between the nickel sulfide phases and the glass matrix. The microstructure and microchemistry of the small inclusions (80 to 250 μm spheres), needed to determine the cause of fracture, have not been well characterized hitherto. The aim of this communication is to report a detailed TEM and EDS study of the inclusions.

scholarly journals Unravelling thermal stress due to thermal expansion mismatch in metal–organic frameworks for methane storage

2021 ◽  
Author(s):  
Jelle Wieme ◽  
Veronique Van Speybroeck
Keyword(s):  
Thermal Expansion ◽  
Thermal Stress ◽  
Pressure Coefficient ◽  
Metal Organic Frameworks ◽  
Methane Storage ◽  
Thermal Expansion Mismatch ◽  
Thermal Pressure ◽  
Temperature Changes ◽  
Metal Organic ◽  
The Impact

Thermal stress is present in metal–organic frameworks undergoing temperature changes during adsorption and desorption. We computed the thermal pressure coefficient as a proxy for this phenomenon and discuss the impact of thermal expansion mismatch.

Alucone Interlayers to Minimize Stress Caused by Thermal Expansion Mismatch between Al2O3 Films and Teflon Substrates

2013 ◽  
Vol 5 (3) ◽  
pp. 1165-1173 ◽  
Author(s):  
Shih-Hui Jen ◽  
Steven M. George ◽  
Robert S. McLean ◽  
Peter F. Carcia
Keyword(s):  
Thermal Expansion ◽  
Thermal Expansion Mismatch ◽  
Al2o3 Films
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