MOCVD Growth of Gan on Silicon and Related Surfaces

1998 ◽  
Vol 512 ◽  
Author(s):  
J. Han ◽  
J. G. Fleming ◽  
D. M. Follstaedt
Keyword(s):  
Thermal Expansion ◽  
High Temperature ◽  
Buffer Layer ◽  
Silicon On Insulator ◽  
Thermal Expansion Mismatch ◽  
Subsequent Growth ◽  
Si Substrates ◽  
Mocvd Growth ◽  
Spatial Coherency

ABSTRACTThe growth of GaN on silicon (Si) substrates by MOCVD is reported in this paper. The use of a high-temperature AIN buffer layer appears to be necessary to establish an initial template morphology for the subsequent growth of GaN. Nucleation modes of GaN on SiO2, (100) Si, and (111) Si are compared; it is shown that the spatial coherency among the nuclei is most preserved when the growth occurred on the hexagonal Si (111) surface. To circumvent the problem associated with cracking due to a thermal expansion mismatch, we also investigate the possibility of using a silicon-on-insulator (SOI) scheme.

Photoluminescence of InP/GaAs/Si Heterostructures

1988 ◽  
Vol 144 ◽  
Author(s):  
V.P. Mazzi ◽  
N.M. Haegel ◽  
S.M. Vernon ◽  
V.E. Haven
Keyword(s):  
Residual Stress ◽  
Thermal Expansion ◽  
Low Temperature ◽  
Band Gap ◽  
Buffer Layer ◽  
Thermal Expansion Mismatch ◽  
Si Substrates ◽  
Gaas Buffer Layer ◽  
Buffer Layer Thickness ◽  
Low Temperature Photoluminescence

ABSTRACTLow temperature photoluminescence results from MOCVD epitaxial InP grown on GaAs/Si substrates are presented as a function of thickness of the GaAs buffer layer. As a consequence of thermal expansion mismatch of the heterostructure, the InP layer contains residual stress which causes the band gap to shift and splits the valence band degeneracy of the mj = ± 3/2 and the mj = ± 1/2 bands. Both the shifting and splitting phenomena are clearly seen in tite PL results and are shown to depend on the GaAs buffer layer thickness.

Initial Buffer Layers on the Growth of InGaP on Si by MBE

1996 ◽  
Vol 441 ◽  
Author(s):  
H. Kawanami ◽  
S. Ghosh ◽  
I. Sakata ◽  
T. Sekigawa
Keyword(s):  
High Temperature ◽  
Surface Structure ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Single Domain ◽  
Buffer Layers ◽  
Structure Control ◽  
Si Substrates ◽  
Direct Growth ◽  
Initial Buffer

AbstractSingle domain InxGa(1-x)P (x=0.3) films were successfully grown on Si(001) misoriented substrates by molecular beam epitaxy with a solid phosphorous source. The effects of interfacial buffer layers such as InGaP (i.e. direct growth without buffer layer), GaP, AlP, and GaAs were examined. Also a Si epitaxial buffer layer was tried to control the Si surface structure. Mirror like surfaces were obtained for all films with RHEED patterns of (2×1) single domain surface structure. PL intensities for all films indicated almost the same values except for the films with a Si epitaxial buffer layer. The films with a Si epitaxial buffer layer had almost three times larger PL intensities than the films without Si epitaxial buffer layer. The results suggest incomplete cleaning of the Si surface by the high temperature (1000 °C) treatment and possibility of surface structure control for Si substrates by a Si epitaxial buffer layer.

Interface Microstructure and Thermal Expansion Mismatch in Alloy N/316H Bimetallic Plates

2019 ◽  
Author(s):  
Jia Xiao ◽  
Zhijun Li ◽  
Li Jiang ◽  
Linfeng Ye ◽  
Kun Yu ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
High Temperature ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Explosive Welding ◽  
Thickness Ratio ◽  
Interface Microstructure ◽  
Thermal Expansion Mismatch ◽  
Bond Interface ◽  
Bimetallic Plate

Abstract Two Alloy N/316H bimetallic plates have been fabricated by explosive welding and rolling technologies respectively. Metallographic observations indicate that the rolled bimetallic plate has a straight bond interface, in which some cavities and precipitates exist. While the explosive welded plate shows a wavy bond interfaces. The interface thermal expansion mismatch between the two alloys were evaluated in the two plates at high temperature. Results show that the thermal expansion coefficient of 316H is larger than that of Alloy N. The thermal expansion coefficient of the substrate plates depends on the thickness ratio between Alloy N and 316H, which reaches the maximum when the ratio is 1:4.

NANO-ORDERED PALPUS-LIKE CRYSTALS IN La1/3Ca2/3MnO3 FILMS

2007 ◽  
Vol 14 (04) ◽  
pp. 769-772
Author(s):  
J. H. XING ◽  
B. QIAN ◽  
J. F. FENG ◽  
X. F. JIANG ◽  
X. S. WU ◽  
...  
Keyword(s):  
Phase Transition ◽  
Thermal Expansion ◽  
High Temperature ◽  
Colossal Magnetoresistance ◽  
Film Growth ◽  
Thermal Expansion Mismatch ◽  
Ordered Structures

The surface of La 1/3 Ca 2/3 MnO 3 (LCMO) films with thickness, t, ranging from 4 to 150 nm has been studied. Highly ordered palpus-like crystals induced by strain are observed in the films grown on the substrate of SrTiO 3 (with thickness t ranging from 20 to 50 nm) and on sapphire (with thickness t ranging from 30 to 50 nm). The strain is identified to result from thermal expansion mismatch between the substrate and the film, and thermal expansion anomaly may exist at a high temperature induced by possible phase transition in LCMO with t = 30 nm. Such a phenomenon may arrest the film growth and the understanding of colossal magnetoresistance materials as well as provide a new way to make ordered structures for applications.

Properties Of Epitaxial Cdte On Si(lll) With a (Ca,Ba)F2 Buffer Layer

1987 ◽  
Vol 91 ◽  
Author(s):  
H. Zogg ◽  
S. Blunier
Keyword(s):  
Thermal Expansion ◽  
Buffer Layer ◽  
Room Temperature ◽  
Band Edge ◽  
Structural Quality ◽  
Near Band Edge ◽  
Thermal Expansion Mismatch ◽  
X Ray ◽  
Device Applications ◽  
Near Band Edge Peak

ABSTRACTEpitaxial CdTe has been grown onto Si(lll) wafers by MBE with the aid of a composition graded (Ca,Ba)F2 buffer layer to surmount the large misfit of 19%. Untwinned CdTe layers with smooth surfaces, narrow X-ray lines and strong photoluminescence with a narrow near band edge peak were obtained. The results indicate a comparable structural quality to well known CdTe layers on sapphire, InSb or GaAs used as buffers to grow (Hg, Cd)Te for IR-device applications. In addition, the CdTe layers are near strain free despite a large thermal expansion mismatch. This is most probably due to dislocations which are able to move along the fluoride/Si interface even after growth and down to near room temperature.

Near-infrared Ge Photodetectors Fabricated on Si Substrates with CMOS Technology

2003 ◽  
Vol 770 ◽  
Author(s):  
Douglas D. Cannon ◽  
Samerkhae Jongthammanurak ◽  
Jifeng Liu ◽  
David T. Danielson ◽  
Kazumi Wada ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
Growth Temperature ◽  
Tensile Strain ◽  
Near Infrared ◽  
Transition Energy ◽  
Cmos Technology ◽  
Cmos Process ◽  
Thermal Expansion Mismatch ◽  
Direct Transition ◽  
Si Substrates

AbstractWe have fabricated the first CMOS process compatible high-responsivity Ge p-i-n diodes for 1.55 μm wavelengths. The thermal expansion mismatch between Ge epilayers and Si substrates was used to engineer tensile strain upon cooling from the growth temperature. This 0.2% tensile strain results in a lowering of the direct transition energy in Ge by 30 meV and extends the responsivity curve to near 1.6μm.

Effect of ZrO2 Additive on Phase Composition of CaO-ZrO2-SiO2 Glaze

2014 ◽  
Vol 931-932 ◽  
pp. 137-141 ◽  
Author(s):  
Kamol Traipanya ◽  
Sukasem Watcharamaisakul
Keyword(s):  
Phase Transition ◽  
Thermal Analysis ◽  
Thermal Expansion ◽  
Phase Composition ◽  
High Temperature ◽  
Firing Temperature ◽  
Crystalline Phase ◽  
Glass System ◽  
Thermal Expansion Mismatch ◽  
Soaking Time

The effect of ZrO2 content on phase composition of CaO-ZrO2-SiO2 glass system was investigated in the present research. CaO, ZrO2 and SiO2 were used to made frits. It was found that glass samples of high ZrO2 content contained wollastonite, pseudowollastonite and Ca2ZrSi4O12 as the major components of crystalline phase and samples of low ZrO2 content mainly included non-crystalline phase. The present results also confirmed that firing temperature and soaking time have influence on the phase transition of wollastonite. At high temperature, the wollastonite phase was changed to the pseudowollastonite phase which was verified by thermal analysis. Microstructure observations of glaze samples revealed the formation of crystals in different directions. The thermal expansion mismatch between glaze and body led to the development of microcracks.

Microstructural and Microchemical Characterization of Nickel Sulfide Inclusions in Plate Glass

1991 ◽  
Vol 49 ◽  
pp. 962-963
Author(s):  
J. Cooper ◽  
O. Popoola ◽  
W. M. Kriven
Keyword(s):  
Thermal Expansion ◽  
Phase Transformation ◽  
Glass Matrix ◽  
Nickel Sulfide ◽  
Plate Glass ◽  
Thermal Expansion Mismatch ◽  
Volume Increase ◽  
Β Phase ◽  
Microchemical Characterization

Nickel sulfide inclusions have been implicated in the spontaneous fracture of large windows of tempered plate glass. Two alternative explanations for the fracture-initiating behaviour of these inclusions have been proposed: (1) the volume increase which accompanies the α to β phase transformation in stoichiometric NiS, and (2) the thermal expansion mismatch between the nickel sulfide phases and the glass matrix. The microstructure and microchemistry of the small inclusions (80 to 250 μm spheres), needed to determine the cause of fracture, have not been well characterized hitherto. The aim of this communication is to report a detailed TEM and EDS study of the inclusions.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

NILO ALLOY 36

Alloy Digest ◽  
1987 ◽  
Vol 36 (8) ◽  
Keyword(s):  
Thermal Expansion ◽  
Corrosion Resistance ◽  
High Temperature ◽  
Physical Properties ◽  
Surface Treatment ◽  
Constant Coefficient ◽  
Coefficient Of Thermal Expansion ◽  
Heat Treating ◽  
Temperature Performance ◽  
Iron Nickel

Abstract NILO alloy 36 is a binary iron-nickel alloy having a very low and essentially constant coefficient of thermal expansion at atmospheric temperatures. This datasheet provides information on composition, physical properties, elasticity, and tensile properties. It also includes information on high temperature performance and corrosion resistance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: Fe-79. Producer or source: Inco Alloys International Inc..

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