scholarly journals Characterization of Atomic Layer DepositedWNxCy Thin Film as a Diffusion Barrier for CopperMetallization

2003 ◽  
Vol 766 ◽  
Author(s):  
Soo-Hyun Kim ◽  
Su Suk Oh ◽  
Hyun-Mi Kim ◽  
Dae-Hwan Kang ◽  
Ki-Bum Kim ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Rutherford Backscattering Spectrometry ◽  
Atomic Layer ◽  
Lattice Parameter ◽  
Grain Structure ◽  
Cubic Phase ◽  
Face Centered Cubic ◽  
Cu Metallization ◽  
Sputter Deposited ◽  
Deposited Film

AbstractThe film properties of WNxCy films deposited by atomic layer deposition (ALD) using WF6, NH3, and triethylboron source gases were characterized as diffusion barrier for Cu metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΔ-cm with a film density of 15.37 g/cm3. The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of approximately 48, 32, and 20 at.%, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC1-x and β-W2N with an equiaxed microstructure. The barrier property of this ALD-WNxCy film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700°C for 30 minutes while the sputter-deposited Ta (12 nm) and ALD-TiN (20 nm) fail at 650 and 600°C, respectively. It is thought that the superior diffusion barrier performance of ALD-WNxCyfilm is the consequence of both nanocrystalline equiaxed grain structure and the formation of high density film.

Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization

2015 ◽  
Vol 590 ◽  
pp. 311-317 ◽  
Author(s):  
Sang-Kyung Choi ◽  
Hangil Kim ◽  
Junbeam Kim ◽  
Taehoon Cheon ◽  
Jong Hyun Seo ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Atomic Layer ◽  
Cu Metallization

Critical factors that determine face-centered cubic to body-centered cubic phase transformation in sputter-deposited austenitic stainless steel films

2004 ◽  
Vol 19 (6) ◽  
pp. 1696-1702 ◽  
Author(s):  
X. Zhang ◽  
A. Misra ◽  
R.K. Schulze ◽  
C.J. Wetteland ◽  
H. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Austenitic Stainless Steel ◽  
Phase Stability ◽  
Cubic Phase ◽  
Face Centered Cubic ◽  
Body Centered Cubic ◽  
Bcc Structure ◽  
Face Centered ◽  
Sputter Deposited

Bulk austenitic stainless steels (SS) have a face-centered cubic (fcc) structure. However, sputter deposited films synthesized using austenitic stainless steel targets usually exhibit body-centered cubic (bcc) structure or a mixture of fcc and bcc phases. This paper presents studies on the effect of processing parameters on the phase stability of 304 and 330 SS thin films. The 304 SS thin films with in-plane, biaxial residual stresses in the range of approximately 1 GPa (tensile) to approximately 300 MPa (compressive) exhibited only bcc structure. The retention of bcc 304 SS after high-temperature annealing followed by slow furnace cooling indicates depletion of Ni in as-sputtered 304 SS films. The 330 SS films sputtered at room temperature possess pure fcc phase. The Ni content and the substrate temperature during deposition are crucial factors in determining the phase stability in sputter deposited austenitic SS films.

Evolution of the Transrotational Structure During Crystallization of Amorphous Ge2Sb2Te5 Thin Films

2009 ◽  
Vol 1160 ◽  
Author(s):  
Emanuele Rimini ◽  
Riccardo De Bastiani ◽  
Egidio Carria ◽  
Maria Grazia Grimaldi ◽  
Giuseppe Nicotra ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Surface ◽  
Xrd Analysis ◽  
Lattice Parameter ◽  
Cubic Phase ◽  
Face Centered Cubic ◽  
Tem Analysis ◽  
The Face ◽  
Face Centered ◽  
Average Lattice

AbstractThe crystallization of amorphous Ge2Sb2Te5 thin films has been studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The analysis has been performed on partially crystallized films, with a surface crystalline fraction (fS) ranging from 20% to 100%. XRD analysis indicates the presence, in the partially transformed layer, of grains with average lattice parameters higher than that of the equilibrium metastable cubic phase (from 6.06 Å at fS=20% to 6.01 Å at fS=100%). The amorphous to crystal transition, as shown by TEM analysis, occurs through the nucleation of face-centered-cubic crystal domains at the film surface. Local dimples appear in the crystallized areas, due to the higher atomic density of the crystal phase compared to the amorphous one. At the initial stage of the transformation, a fast bi-dimensional growth of such crystalline nucleus occurs by the generation of transrotational grains in which the lattice bending gives rise to an average lattice parameter significantly larger than that of the face-centered-cubic phase in good agreement with the XRD data. As the crystallized fraction increases above 80%, dimples and transrotational structures start to disappear and the lattice parameter approaches the bulk value.

Highly Conformal Amorphous W–Si–N Thin Films by Plasma-Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization

2015 ◽  
Vol 119 (3) ◽  
pp. 1548-1556 ◽  
Author(s):  
Tae Eun Hong ◽  
Jae-Hun Jung ◽  
Seungmin Yeo ◽  
Taehoon Cheon ◽  
So Ik Bae ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Cu Metallization ◽  
Layer Deposition

Characterization of Atomic Layer Deposited Ultrathin HfO2 Film as a Diffusion Barrier in Cu Metallization

2007 ◽  
Vol 990 ◽  
Author(s):  
Prodyut Majumder ◽  
Rajesh Katamreddy ◽  
Christos G Takoudis
Keyword(s):  
Diffusion Barrier ◽  
Photoelectron Spectroscopy ◽  
Effective Diffusion ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
Hfo2 Film ◽  
X Ray ◽  
Cu Metallization ◽  
Layer Deposition ◽  
Different Temperatures

ABSTRACTThermally stable, amorphous HfO2 thin films deposited using atomic layer deposition have been studied as a diffusion barrier between Cu and the Si substrate. 4 nm thick as-deposited HfO2 films deposited on Si are characterized with X-ray photoelectron spectroscopy. Cu/HfO2/<Si> samples are annealed at different temperatures, starting from 500 °C, in the presence of N2 atmosphere for 5 min and characterized using sheet resistance, X-ray diffraction and scanning electron microscopy. Ultrathin HfO2 films are found to be effective diffusion barrier between Cu and Si with a high failure temperature of about 750 °C.

scholarly journals Mechanical Properties and Diffusion Barrier Performance of CrWN Coatings Fabricated through Hybrid HiPIMS/RFMS

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 690
Author(s):  
Li-Chun Chang ◽  
Cheng-En Wu ◽  
Tzu-Yu Ou
Keyword(s):  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Diffusion Barrier ◽  
Scratch Resistance ◽  
Face Centered Cubic ◽  
Cu Metallization ◽  
Barrier Performance ◽  
Face Centered ◽  
And Diffusion ◽  
Hardness Values

CrWN coatings were fabricated through a hybrid high-power impulse magnetron sputtering/radio-frequency magnetron sputtering technique. The phase structures, mechanical properties, and tribological characteristics of CrWN coatings prepared with various nitrogen flow ratios (fN2s) were investigated. The results indicated that the CrWN coatings prepared at fN2 levels of 0.1 and 0.2 exhibited a Cr2N phase, whereas the coatings prepared at fN2 levels of 0.3 and 0.4 exhibited a CrN phase. These CrWN coatings exhibited hardness values of 16.7–20.2 GPa and Young’s modulus levels of 268–296 GPa, which indicated higher mechanical properties than those of coatings with similar residual stresses prepared through conventional direct current magnetron sputtering. Face-centered cubic (fcc) Cr51W2N47 coatings with a residual stress of −0.53 GPa exhibited the highest wear and scratch resistance. Furthermore, the diffusion barrier performance of fcc CrWN films on Cu metallization was explored, and they exhibited excellent barrier characteristics up to 650 °C.

Reactively sputtered WOxNy films

2000 ◽  
Vol 15 (11) ◽  
pp. 2437-2445 ◽  
Author(s):  
Y. G. Shen ◽  
Y. W. Mai
Keyword(s):  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Lattice Parameter ◽  
Grain Structure ◽  
Ex Situ ◽  
Cross Sectional ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Sputter Deposited

A combined investigation of stress relaxation in WOxNy thin films sputter deposited on silicon wafers in an Ar–N2–O2 gas mixture by in situ substrate curvature measurements and of structural properties by ex situ x-ray diffraction, x-ray photoelectron spectroscopy, transmission electron microscopy (TEM), electron energy loss spectroscopy, and transmission electron diffraction is reported. It was found that the W2N films deposited under oxygen-free conditions had a high compressive stress of 1.45 GPa. As the oxygen concentration was increased, the stress became smaller and reached almost zero for films near 10–15 at.% oxygen. These results can be understood in terms of the decrease in the lattice parameter caused by substituting nitrogen atoms with oxygen in the lattice sites and the development of an amorphous network in the WOxNy films as the incorporation of oxygen was increased. Plan view and cross-sectional TEM analyses showed that 150-nm-thick oxygen-free crystalline W2N films had a columnar microstructure with an average column width of 15–20 nm near the film surface, whereas oxygen imbedded in the films provided a finer grain structure. The effect of oxygen in stabilizing the W2N structure was also elucidated and explained on the basis of structural and thermodynamic stability.

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