Microemulsion-Templated Synthesis of Highly Active High-Temperature Stable Partial Oxidation Catalysts

2002 ◽  
Vol 756 ◽  
Author(s):  
Mark Kirchhoff ◽  
Ullrich Specht ◽  
Götz Veser

ABSTRACTHighly active catalysts for high-temperature partial oxidation reactions have been synthesized based on a microemulsion-templated sol-gel synthesis. The catalysts were tested with the direct catalytic oxidation of methane to synthesis gas and showed excellent selectitivites towards syngas combined with very high activity and low ignition temperatures. Furthermore, a surprisingly high long term stability was observed at these high-temperature conditions of T > 900°C. The catalyst therefore seem very promising candidates for high-temperature partial oxidation and hydrogen production from hydrocarbon fuels.

Alloy Digest ◽  
2020 ◽  
Vol 69 (8) ◽  

Abstract ATI 6-2-4-2 is a near-alpha, high strength, titanium alloy that exhibits a good combination of tensile strength, creep strength, toughness, and long-term stability at temperatures up to 425 °C (800 °F). Silicon up to 0.1% frequently is added to improve the creep resistance of the alloy. This datasheet provides information on composition, physical properties, hardness, and tensile properties as well as creep. It also includes information on high temperature performance as well as forming, heat treating, machining, and joining. Filing Code: Ti-169. Producer or Source: ATI.


Proceedings ◽  
2021 ◽  
Vol 56 (1) ◽  
pp. 41
Author(s):  
Lida Khajavizadeh ◽  
Anita Lloyd Spetz ◽  
Mike Andersson

In order to investigate the necessary device improvements for high-temperature CO sensing with SiC metal insulator semiconductor field effect transistor (MISFET)-based chemical gas sensors, devices employing, as the gas-sensitive gate contact, a film of co-deposited Pt/Al2O3 instead of the commonly used catalytic metal-based contacts were fabricated and characterized for CO detection at elevated temperatures and different CO and O2 levels. It can be concluded that the sensing mechanism at elevated temperatures correlates with oxygen removal from the sensor surface rather than the surface CO coverage as observed at lower temperatures. The long-term stability performance was also shown to be improved compared to that of previously studied devices.


Catalysts ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 985
Author(s):  
Byungwook Hwang ◽  
Jung Hwan Kim ◽  
Doyeon Lee ◽  
Hyungseok Nam ◽  
Ha Na Kim ◽  
...  

In the integrated gasification combined cycle (IGCC) process, the sulfur compounds present in coal are converted to hydrogen sulfide (H2S) when the coal is gasified. Due to its harmful effects on sorbent/solvent and environmental regulations, H2S needs to be removed from the product gas stream. To simulate the H2S removal process, desulfurization was carried out using a dry sorbent as a fluidizing material within a bubbling, high-temperature fluidized bed reactor. The ZnO-based sorbent showed not only an excellent capacity of H2S removal but also long-term stability. However, unexpected SO2 gas at a concentration of several hundred ppm was detected during the desulfurization reaction. Thus, we determined that there is an unknown source that supplies oxygen to ZnS, and identified the oxygen supplier through three possibilities: oxygen by reactant (fresh sorbent, ZnO), byproduct (ZnSO4), and product (H2O). From the experiment results, we found that the H2O produced from the reaction reacts with ZnS, resulting in SO2 gas being generated during desulfurization. The unknown oxygen source during desulfurization was deduced to be oxygen from H2O produced during desulfurization. That is, the oxygen from produced H2O reacts with ZnS, leading to SO2 generation at high temperature.


2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000305-000309 ◽  
Author(s):  
Vinayak Tilak ◽  
Cheng-Po Chen ◽  
Peter Losee ◽  
Emad Andarawis ◽  
Zachary Stum

Silicon carbide based ICs have the potential to operate at temperatures exceeding that of conventional semiconductors such as silicon. Silicon carbide (SiC) based MOSFETs and ICs were fabricated and measured at room temperature and 300°C. A common source amplifier was fabricated and tested at room temperature and high temperature. The gain at room temperature and high temperature was 7.6 and 6.8 respectively. A SiC MOSFET based operational amplifier was also fabricated and tested at room temperature and 300°C. The small signal open loop gain at 1kHz was 60 dB at room temperature and 57 dB at 300°C. Long term stability testing at 300°C of the MOSFET and common source amplifiers showed very little drift.


RSC Advances ◽  
2019 ◽  
Vol 9 (41) ◽  
pp. 23744-23751 ◽  
Author(s):  
Haodong Tang ◽  
Mingming Dang ◽  
Yuzhen Li ◽  
Lichun Li ◽  
Wenfeng Han ◽  
...  

In this study, sol–gel, precipitation and hard-template methods were applied to synthesize MgF2 catalysts with improved stability towards dehydrofluorination of hydrofluorocarbons and MgF2-T catalysts demonstrated superior long-term stability.


2020 ◽  
Vol 491 ◽  
pp. 110982
Author(s):  
William G. Cortés Ortiz ◽  
Daniel Delgado ◽  
Carlos Alberto Guerrero Fajardo ◽  
Said Agouram ◽  
Rut Sanchís ◽  
...  

JOM ◽  
2014 ◽  
Vol 66 (12) ◽  
pp. 2476-2477
Author(s):  
Chantal K. Sudbrack ◽  
Mark C. Hardy

ChemCatChem ◽  
2013 ◽  
Vol 5 (12) ◽  
pp. 3781-3787 ◽  
Author(s):  
Lei Li ◽  
Yao Yao ◽  
Bo Sun ◽  
Zhaoyang Fei ◽  
Hao Xia ◽  
...  

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